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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON
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| Zeitschriftentitel: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
|---|---|
| Personen und Körperschaften: | , , |
| In: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 12, 1993, 4, S. 417-422 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Emerald
|
| Schlagwörter: |
| author_facet |
Gadiyak, G.V. Korobitsina, J.L. Kramarenko, V.I. Gadiyak, G.V. Korobitsina, J.L. Kramarenko, V.I. |
|---|---|
| author |
Gadiyak, G.V. Korobitsina, J.L. Kramarenko, V.I. |
| spellingShingle |
Gadiyak, G.V. Korobitsina, J.L. Kramarenko, V.I. COMPEL - The international journal for computation and mathematics in electrical and electronic engineering NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications |
| author_sort |
gadiyak, g.v. |
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Gadiyak, G.V. Korobitsina, J.L. Kramarenko, V.I. 0332-1649 Emerald Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications http://dx.doi.org/10.1108/eb051815 <jats:p>The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.</jats:p> NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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Emerald, 1993 |
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COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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| title |
NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_unstemmed |
NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
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NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_short |
NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_sort |
numerical simulation of the thermal oxidation of polycrystalline silicon |
| topic |
Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications |
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http://dx.doi.org/10.1108/eb051815 |
| publishDate |
1993 |
| physical |
417-422 |
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<jats:p>The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.</jats:p> |
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| author | Gadiyak, G.V., Korobitsina, J.L., Kramarenko, V.I. |
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| description | <jats:p>The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.</jats:p> |
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| imprint | Emerald, 1993 |
| imprint_str_mv | Emerald, 1993 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
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| physical | 417-422 |
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| series | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
| source_id | 49 |
| spelling | Gadiyak, G.V. Korobitsina, J.L. Kramarenko, V.I. 0332-1649 Emerald Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications http://dx.doi.org/10.1108/eb051815 <jats:p>The model of the thermal oxidation of polycrystalline silicon is described. It includes parabolic equation system for the diffusion process of oxidant in polycrystalline oxide, equations system for the deformation of oxide and nitride mask. The numerical calculations of the reverse L‐shape sealed polybuffer LOCOS are presented.</jats:p> NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
| spellingShingle | Gadiyak, G.V., Korobitsina, J.L., Kramarenko, V.I., COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON, Applied Mathematics, Electrical and Electronic Engineering, Computational Theory and Mathematics, Computer Science Applications |
| title | NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_full | NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_fullStr | NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_full_unstemmed | NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_short | NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| title_sort | numerical simulation of the thermal oxidation of polycrystalline silicon |
| title_unstemmed | NUMERICAL SIMULATION OF THE THERMAL OXIDATION OF POLYCRYSTALLINE SILICON |
| topic | Applied Mathematics, Electrical and Electronic Engineering, Computational Theory and Mathematics, Computer Science Applications |
| url | http://dx.doi.org/10.1108/eb051815 |