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MoS2 Field-Effect Transistor with Sub-10 nm Channel Length
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| Zeitschriftentitel: | Nano Letters |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , , , , |
| In: | Nano Letters, 16, 2016, 12, S. 7798-7806 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
American Chemical Society (ACS)
|
| Schlagwörter: |
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Nourbakhsh, Amirhasan Zubair, Ahmad Sajjad, Redwan N. Tavakkoli K. G., Amir Chen, Wei Fang, Shiang Ling, Xi Kong, Jing Dresselhaus, Mildred S. Kaxiras, Efthimios Berggren, Karl K. Antoniadis, Dimitri Palacios, Tomás Nourbakhsh, Amirhasan Zubair, Ahmad Sajjad, Redwan N. Tavakkoli K. G., Amir Chen, Wei Fang, Shiang Ling, Xi Kong, Jing Dresselhaus, Mildred S. Kaxiras, Efthimios Berggren, Karl K. Antoniadis, Dimitri Palacios, Tomás |
|---|---|
| author |
Nourbakhsh, Amirhasan Zubair, Ahmad Sajjad, Redwan N. Tavakkoli K. G., Amir Chen, Wei Fang, Shiang Ling, Xi Kong, Jing Dresselhaus, Mildred S. Kaxiras, Efthimios Berggren, Karl K. Antoniadis, Dimitri Palacios, Tomás |
| spellingShingle |
Nourbakhsh, Amirhasan Zubair, Ahmad Sajjad, Redwan N. Tavakkoli K. G., Amir Chen, Wei Fang, Shiang Ling, Xi Kong, Jing Dresselhaus, Mildred S. Kaxiras, Efthimios Berggren, Karl K. Antoniadis, Dimitri Palacios, Tomás Nano Letters MoS2 Field-Effect Transistor with Sub-10 nm Channel Length Mechanical Engineering Condensed Matter Physics General Materials Science General Chemistry Bioengineering |
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nourbakhsh, amirhasan |
| spelling |
Nourbakhsh, Amirhasan Zubair, Ahmad Sajjad, Redwan N. Tavakkoli K. G., Amir Chen, Wei Fang, Shiang Ling, Xi Kong, Jing Dresselhaus, Mildred S. Kaxiras, Efthimios Berggren, Karl K. Antoniadis, Dimitri Palacios, Tomás 1530-6984 1530-6992 American Chemical Society (ACS) Mechanical Engineering Condensed Matter Physics General Materials Science General Chemistry Bioengineering http://dx.doi.org/10.1021/acs.nanolett.6b03999 MoS<sub>2</sub> Field-Effect Transistor with Sub-10 nm Channel Length Nano Letters |
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| title |
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_unstemmed |
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_full |
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_fullStr |
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_full_unstemmed |
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_short |
MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_sort |
mos<sub>2</sub> field-effect transistor with sub-10 nm channel length |
| topic |
Mechanical Engineering Condensed Matter Physics General Materials Science General Chemistry Bioengineering |
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http://dx.doi.org/10.1021/acs.nanolett.6b03999 |
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| author | Nourbakhsh, Amirhasan, Zubair, Ahmad, Sajjad, Redwan N., Tavakkoli K. G., Amir, Chen, Wei, Fang, Shiang, Ling, Xi, Kong, Jing, Dresselhaus, Mildred S., Kaxiras, Efthimios, Berggren, Karl K., Antoniadis, Dimitri, Palacios, Tomás |
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| spelling | Nourbakhsh, Amirhasan Zubair, Ahmad Sajjad, Redwan N. Tavakkoli K. G., Amir Chen, Wei Fang, Shiang Ling, Xi Kong, Jing Dresselhaus, Mildred S. Kaxiras, Efthimios Berggren, Karl K. Antoniadis, Dimitri Palacios, Tomás 1530-6984 1530-6992 American Chemical Society (ACS) Mechanical Engineering Condensed Matter Physics General Materials Science General Chemistry Bioengineering http://dx.doi.org/10.1021/acs.nanolett.6b03999 MoS<sub>2</sub> Field-Effect Transistor with Sub-10 nm Channel Length Nano Letters |
| spellingShingle | Nourbakhsh, Amirhasan, Zubair, Ahmad, Sajjad, Redwan N., Tavakkoli K. G., Amir, Chen, Wei, Fang, Shiang, Ling, Xi, Kong, Jing, Dresselhaus, Mildred S., Kaxiras, Efthimios, Berggren, Karl K., Antoniadis, Dimitri, Palacios, Tomás, Nano Letters, MoS2 Field-Effect Transistor with Sub-10 nm Channel Length, Mechanical Engineering, Condensed Matter Physics, General Materials Science, General Chemistry, Bioengineering |
| title | MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_full | MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_fullStr | MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_full_unstemmed | MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_short | MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| title_sort | mos<sub>2</sub> field-effect transistor with sub-10 nm channel length |
| title_unstemmed | MoS2 Field-Effect Transistor with Sub-10 nm Channel Length |
| topic | Mechanical Engineering, Condensed Matter Physics, General Materials Science, General Chemistry, Bioengineering |
| url | http://dx.doi.org/10.1021/acs.nanolett.6b03999 |