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Interface diffusion and reaction between Ti layer and Si3N4/Si substrate
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| Zeitschriftentitel: | Surface and Interface Analysis |
|---|---|
| Personen und Körperschaften: | , , , |
| In: | Surface and Interface Analysis, 32, 2001, 1, S. 296-300 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
|
| Schlagwörter: |
| author_facet |
Zhu, Yongfa Wang, Li Yao, Wenqing Cao, Lili Zhu, Yongfa Wang, Li Yao, Wenqing Cao, Lili |
|---|---|
| author |
Zhu, Yongfa Wang, Li Yao, Wenqing Cao, Lili |
| spellingShingle |
Zhu, Yongfa Wang, Li Yao, Wenqing Cao, Lili Surface and Interface Analysis Interface diffusion and reaction between Ti layer and Si3N4/Si substrate Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces Condensed Matter Physics General Chemistry |
| author_sort |
zhu, yongfa |
| spelling |
Zhu, Yongfa Wang, Li Yao, Wenqing Cao, Lili 0142-2421 1096-9918 Wiley Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces Condensed Matter Physics General Chemistry http://dx.doi.org/10.1002/sia.1059 <jats:title>Abstract</jats:title><jats:p>A Ti layer of thickness 270 nm was deposited successfully on the surface of Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate using the d.c. sputtering technique. Auger electron spectroscopy (AES) analysis indicates that the Ti layer reduced the native SiO<jats:sub>2</jats:sub> layer that existed on the surface of the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> film to form TiO<jats:sub><jats:italic>x</jats:italic></jats:sub> and Si species at the interface during deposition. The interface diffusion and reaction between the Ti layer and Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate was promoted significantly by annealing treatments in the temperature range 300–700 °C in a high vacuum. At temperatures below 600 °C, only very little silicide formed. With increasing annealing temperature, TiSi species formed rapidly. When the temperature reached 700 °C, both TiSi and TiSi<jats:sub>2</jats:sub> species formed in the interlayer. The formation of TiSi and TiSi<jats:sub>2</jats:sub> species was governed mainly by the interface reaction when the annealing time was short. Silicon in the interlayer mainly came from the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> layer at low temperature or a short annealing time, otherwise it mainly came from the depletion of Si substrate at high temperature or a long annealing time. Copyright © 2001 John Wiley & Sons, Ltd.</jats:p> Interface diffusion and reaction between Ti layer and Si<sub>3</sub>N<sub>4</sub>/Si substrate Surface and Interface Analysis |
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10.1002/sia.1059 |
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Chemie und Pharmazie Allgemeines Technik Physik |
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Wiley, 2001 |
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Wiley, 2001 |
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Surface and Interface Analysis |
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| title |
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_unstemmed |
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_full |
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_fullStr |
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_full_unstemmed |
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_short |
Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_sort |
interface diffusion and reaction between ti layer and si<sub>3</sub>n<sub>4</sub>/si substrate |
| topic |
Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces Condensed Matter Physics General Chemistry |
| url |
http://dx.doi.org/10.1002/sia.1059 |
| publishDate |
2001 |
| physical |
296-300 |
| description |
<jats:title>Abstract</jats:title><jats:p>A Ti layer of thickness 270 nm was deposited successfully on the surface of Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate using the d.c. sputtering technique. Auger electron spectroscopy (AES) analysis indicates that the Ti layer reduced the native SiO<jats:sub>2</jats:sub> layer that existed on the surface of the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> film to form TiO<jats:sub><jats:italic>x</jats:italic></jats:sub> and Si species at the interface during deposition. The interface diffusion and reaction between the Ti layer and Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate was promoted significantly by annealing treatments in the temperature range 300–700 °C in a high vacuum. At temperatures below 600 °C, only very little silicide formed. With increasing annealing temperature, TiSi species formed rapidly. When the temperature reached 700 °C, both TiSi and TiSi<jats:sub>2</jats:sub> species formed in the interlayer. The formation of TiSi and TiSi<jats:sub>2</jats:sub> species was governed mainly by the interface reaction when the annealing time was short. Silicon in the interlayer mainly came from the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> layer at low temperature or a short annealing time, otherwise it mainly came from the depletion of Si substrate at high temperature or a long annealing time. Copyright © 2001 John Wiley & Sons, Ltd.</jats:p> |
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| author | Zhu, Yongfa, Wang, Li, Yao, Wenqing, Cao, Lili |
| author_facet | Zhu, Yongfa, Wang, Li, Yao, Wenqing, Cao, Lili, Zhu, Yongfa, Wang, Li, Yao, Wenqing, Cao, Lili |
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| description | <jats:title>Abstract</jats:title><jats:p>A Ti layer of thickness 270 nm was deposited successfully on the surface of Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate using the d.c. sputtering technique. Auger electron spectroscopy (AES) analysis indicates that the Ti layer reduced the native SiO<jats:sub>2</jats:sub> layer that existed on the surface of the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> film to form TiO<jats:sub><jats:italic>x</jats:italic></jats:sub> and Si species at the interface during deposition. The interface diffusion and reaction between the Ti layer and Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate was promoted significantly by annealing treatments in the temperature range 300–700 °C in a high vacuum. At temperatures below 600 °C, only very little silicide formed. With increasing annealing temperature, TiSi species formed rapidly. When the temperature reached 700 °C, both TiSi and TiSi<jats:sub>2</jats:sub> species formed in the interlayer. The formation of TiSi and TiSi<jats:sub>2</jats:sub> species was governed mainly by the interface reaction when the annealing time was short. Silicon in the interlayer mainly came from the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> layer at low temperature or a short annealing time, otherwise it mainly came from the depletion of Si substrate at high temperature or a long annealing time. Copyright © 2001 John Wiley & Sons, Ltd.</jats:p> |
| doi_str_mv | 10.1002/sia.1059 |
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| imprint | Wiley, 2001 |
| imprint_str_mv | Wiley, 2001 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| spelling | Zhu, Yongfa Wang, Li Yao, Wenqing Cao, Lili 0142-2421 1096-9918 Wiley Materials Chemistry Surfaces, Coatings and Films Surfaces and Interfaces Condensed Matter Physics General Chemistry http://dx.doi.org/10.1002/sia.1059 <jats:title>Abstract</jats:title><jats:p>A Ti layer of thickness 270 nm was deposited successfully on the surface of Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate using the d.c. sputtering technique. Auger electron spectroscopy (AES) analysis indicates that the Ti layer reduced the native SiO<jats:sub>2</jats:sub> layer that existed on the surface of the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> film to form TiO<jats:sub><jats:italic>x</jats:italic></jats:sub> and Si species at the interface during deposition. The interface diffusion and reaction between the Ti layer and Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub>/Si substrate was promoted significantly by annealing treatments in the temperature range 300–700 °C in a high vacuum. At temperatures below 600 °C, only very little silicide formed. With increasing annealing temperature, TiSi species formed rapidly. When the temperature reached 700 °C, both TiSi and TiSi<jats:sub>2</jats:sub> species formed in the interlayer. The formation of TiSi and TiSi<jats:sub>2</jats:sub> species was governed mainly by the interface reaction when the annealing time was short. Silicon in the interlayer mainly came from the Si<jats:sub>3</jats:sub>N<jats:sub>4</jats:sub> layer at low temperature or a short annealing time, otherwise it mainly came from the depletion of Si substrate at high temperature or a long annealing time. Copyright © 2001 John Wiley & Sons, Ltd.</jats:p> Interface diffusion and reaction between Ti layer and Si<sub>3</sub>N<sub>4</sub>/Si substrate Surface and Interface Analysis |
| spellingShingle | Zhu, Yongfa, Wang, Li, Yao, Wenqing, Cao, Lili, Surface and Interface Analysis, Interface diffusion and reaction between Ti layer and Si3N4/Si substrate, Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics, General Chemistry |
| title | Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_full | Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_fullStr | Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_full_unstemmed | Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_short | Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| title_sort | interface diffusion and reaction between ti layer and si<sub>3</sub>n<sub>4</sub>/si substrate |
| title_unstemmed | Interface diffusion and reaction between Ti layer and Si3N4/Si substrate |
| topic | Materials Chemistry, Surfaces, Coatings and Films, Surfaces and Interfaces, Condensed Matter Physics, General Chemistry |
| url | http://dx.doi.org/10.1002/sia.1059 |