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Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors
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| Zeitschriftentitel: | Journal of Instrumentation |
|---|---|
| Personen und Körperschaften: | , |
| In: | Journal of Instrumentation, 1, 2006, 11, S. P11001-P11001 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
IOP Publishing
|
| Schlagwörter: |
| author_facet |
Fiutowski, T Dabrowski, W Fiutowski, T Dabrowski, W |
|---|---|
| author |
Fiutowski, T Dabrowski, W |
| spellingShingle |
Fiutowski, T Dabrowski, W Journal of Instrumentation Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors Mathematical Physics Instrumentation |
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fiutowski, t |
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Fiutowski, T Dabrowski, W 1748-0221 IOP Publishing Mathematical Physics Instrumentation http://dx.doi.org/10.1088/1748-0221/1/11/p11001 Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors Journal of Instrumentation |
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Journal of Instrumentation |
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| title |
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_unstemmed |
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_full |
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_fullStr |
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_full_unstemmed |
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_short |
Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_sort |
noise characterisation of mos transistors in a 0.35 μm cmos technology of geometries dedicated to front-end circuits for strip detectors |
| topic |
Mathematical Physics Instrumentation |
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http://dx.doi.org/10.1088/1748-0221/1/11/p11001 |
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| spelling | Fiutowski, T Dabrowski, W 1748-0221 IOP Publishing Mathematical Physics Instrumentation http://dx.doi.org/10.1088/1748-0221/1/11/p11001 Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors Journal of Instrumentation |
| spellingShingle | Fiutowski, T, Dabrowski, W, Journal of Instrumentation, Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors, Mathematical Physics, Instrumentation |
| title | Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_full | Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_fullStr | Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_full_unstemmed | Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_short | Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| title_sort | noise characterisation of mos transistors in a 0.35 μm cmos technology of geometries dedicated to front-end circuits for strip detectors |
| title_unstemmed | Noise characterisation of MOS transistors in a 0.35 μm CMOS technology of geometries dedicated to front-end circuits for strip detectors |
| topic | Mathematical Physics, Instrumentation |
| url | http://dx.doi.org/10.1088/1748-0221/1/11/p11001 |