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An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
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Journal Title: | Semiconductor Science and Technology |
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Authors and Corporations: | , , |
In: | Semiconductor Science and Technology, 22, 2007, 4, p. 348-353 |
Type of Resource: | E-Article |
Language: | Undetermined |
published: |
IOP Publishing
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Subjects: |