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An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms
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| Zeitschriftentitel: | Semiconductor Science and Technology |
|---|---|
| Personen und Körperschaften: | , , |
| In: | Semiconductor Science and Technology, 22, 2007, 4, S. 348-353 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
IOP Publishing
|
| Schlagwörter: |
| author_facet |
Rodriguez, N Roldán, J B Gámiz, F Rodriguez, N Roldán, J B Gámiz, F |
|---|---|
| author |
Rodriguez, N Roldán, J B Gámiz, F |
| spellingShingle |
Rodriguez, N Roldán, J B Gámiz, F Semiconductor Science and Technology An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials |
| author_sort |
rodriguez, n |
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Rodriguez, N Roldán, J B Gámiz, F 0268-1242 1361-6641 IOP Publishing Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1088/0268-1242/22/4/009 An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms Semiconductor Science and Technology |
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| title |
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_unstemmed |
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_full |
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_fullStr |
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_full_unstemmed |
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_short |
An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_sort |
an electron mobility model for ultra-thin gate-oxide mosfets including the contribution of remote scattering mechanisms |
| topic |
Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials |
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http://dx.doi.org/10.1088/0268-1242/22/4/009 |
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2007 |
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348-353 |
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| author | Rodriguez, N, Roldán, J B, Gámiz, F |
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| imprint | IOP Publishing, 2007 |
| imprint_str_mv | IOP Publishing, 2007 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
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| physical | 348-353 |
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| series | Semiconductor Science and Technology |
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| spelling | Rodriguez, N Roldán, J B Gámiz, F 0268-1242 1361-6641 IOP Publishing Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1088/0268-1242/22/4/009 An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms Semiconductor Science and Technology |
| spellingShingle | Rodriguez, N, Roldán, J B, Gámiz, F, Semiconductor Science and Technology, An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms, Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
| title | An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_full | An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_fullStr | An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_full_unstemmed | An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_short | An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| title_sort | an electron mobility model for ultra-thin gate-oxide mosfets including the contribution of remote scattering mechanisms |
| title_unstemmed | An electron mobility model for ultra-thin gate-oxide MOSFETs including the contribution of remote scattering mechanisms |
| topic | Materials Chemistry, Electrical and Electronic Engineering, Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
| url | http://dx.doi.org/10.1088/0268-1242/22/4/009 |