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Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , , |
| In: | Applied Physics Letters, 100, 2012, 20 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
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| Schlagwörter: |
| author_facet |
Panciera, F. Baudot, S. Hoummada, K. Gregoire, M. Juhel, M. Mangelinck, D. Panciera, F. Baudot, S. Hoummada, K. Gregoire, M. Juhel, M. Mangelinck, D. |
|---|---|
| author |
Panciera, F. Baudot, S. Hoummada, K. Gregoire, M. Juhel, M. Mangelinck, D. |
| spellingShingle |
Panciera, F. Baudot, S. Hoummada, K. Gregoire, M. Juhel, M. Mangelinck, D. Applied Physics Letters Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold Physics and Astronomy (miscellaneous) |
| author_sort |
panciera, f. |
| spelling |
Panciera, F. Baudot, S. Hoummada, K. Gregoire, M. Juhel, M. Mangelinck, D. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4717742 <jats:p>The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative.</jats:p> Three-dimensional distribution of Al in high-<i>k</i> metal gate: Impact on transistor voltage threshold Applied Physics Letters |
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Applied Physics Letters |
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| title |
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_unstemmed |
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_full |
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_fullStr |
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_full_unstemmed |
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_short |
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_sort |
three-dimensional distribution of al in high-<i>k</i> metal gate: impact on transistor voltage threshold |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.4717742 |
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2012 |
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<jats:p>The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative.</jats:p> |
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| author | Panciera, F., Baudot, S., Hoummada, K., Gregoire, M., Juhel, M., Mangelinck, D. |
| author_facet | Panciera, F., Baudot, S., Hoummada, K., Gregoire, M., Juhel, M., Mangelinck, D., Panciera, F., Baudot, S., Hoummada, K., Gregoire, M., Juhel, M., Mangelinck, D. |
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| description | <jats:p>The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative.</jats:p> |
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| source_id | 49 |
| spelling | Panciera, F. Baudot, S. Hoummada, K. Gregoire, M. Juhel, M. Mangelinck, D. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4717742 <jats:p>The three-dimensional spatial distribution of Al in the high-k metal gates of metal-oxide-semiconductor field-effect-transistors is measured by atom probe tomography. Chemical distribution is correlated with the transistor voltage threshold (VTH) shift generated by the introduction of a metallic Al layer in the metal gate. After a 1050 °C annealing, it is shown that a 2-Å thick Al layer completely diffuses into oxide layers, while a positive VTH shift is measured. On the contrary, for thicker Al layers, Al precipitation in the metal gate stack is observed and the VTH shift becomes negative.</jats:p> Three-dimensional distribution of Al in high-<i>k</i> metal gate: Impact on transistor voltage threshold Applied Physics Letters |
| spellingShingle | Panciera, F., Baudot, S., Hoummada, K., Gregoire, M., Juhel, M., Mangelinck, D., Applied Physics Letters, Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold, Physics and Astronomy (miscellaneous) |
| title | Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_full | Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_fullStr | Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_full_unstemmed | Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_short | Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| title_sort | three-dimensional distribution of al in high-<i>k</i> metal gate: impact on transistor voltage threshold |
| title_unstemmed | Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.4717742 |