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Impact of active layer design on InGaN radiative recombination coefficient and LED performance
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , |
| In: | Journal of Applied Physics, 111, 2012, 6 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Li, X. Okur, S. Zhang, F. Avrutin, V. Özgür, Ü. Morkoç, H. Hong, S. M. Yen, S. H. Hsu, T. C. Matulionis, A. Li, X. Okur, S. Zhang, F. Avrutin, V. Özgür, Ü. Morkoç, H. Hong, S. M. Yen, S. H. Hsu, T. C. Matulionis, A. |
|---|---|
| author |
Li, X. Okur, S. Zhang, F. Avrutin, V. Özgür, Ü. Morkoç, H. Hong, S. M. Yen, S. H. Hsu, T. C. Matulionis, A. |
| spellingShingle |
Li, X. Okur, S. Zhang, F. Avrutin, V. Özgür, Ü. Morkoç, H. Hong, S. M. Yen, S. H. Hsu, T. C. Matulionis, A. Journal of Applied Physics Impact of active layer design on InGaN radiative recombination coefficient and LED performance General Physics and Astronomy |
| author_sort |
li, x. |
| spelling |
Li, X. Okur, S. Zhang, F. Avrutin, V. Özgür, Ü. Morkoç, H. Hong, S. M. Yen, S. H. Hsu, T. C. Matulionis, A. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.3699199 <jats:p>The relative roles of radiative and nonradiative processes and the polarization field on the light emission from blue (∼425 nm) InGaN light emitting diodes (LEDs) have been studied. Single and multiple double heterostructure (DH) designs have been investigated with multiple DH structures showing improved efficiencies. Experimental results supported by numerical simulations of injection dependent electron and hole wavefunction overlap and the corresponding radiative recombination coefficients suggest that increasing the effective active region thickness by employing multiple InGaN DH structures separated by thin and low barriers is promising for LEDs with high efficiency retention at high injection. The use of thin and low barriers is crucial to enhance carrier transport across the active region. Although increasing the single DH thickness from 3 to 6 nm improves the peak external quantum efficiency (EQE) by nearly 3.6 times due to increased density of states and increased emitting volume, the internal quantum efficiency (IQE) suffers a loss of nearly 30%. A further increase in the DH thickness to 9 and 11 nm results in a significantly slower rate of increase of EQE with current injection and lower peak EQE values presumably due to degradation of the InGaN material quality and reduced electron-hole spatial overlap. Increasing the number of 3 nm DH active regions separated by thin (3 nm) In0.06Ga0.94N barriers improves EQE, while maintaining high IQE (above 95% at a carrier concentration of 1018 cm−3) and showing negligible EQE degradation up to 550 A/cm2 in 400 × 400 μm2 devices due to increased emitting volume and high radiative recombination coefficients and high IQE. Time-resolved photoluminescence measurements revealed higher radiative recombination rates with increasing excitation due to screening of the internal field and enhanced electron and hole overlap at higher injection levels. To shed light on the experimental observations, the effect of free-carrier screening on the polarization field at different injection levels and the resulting impact on the quantum efficiency were investigated by numerical simulations.</jats:p> Impact of active layer design on InGaN radiative recombination coefficient and LED performance Journal of Applied Physics |
| doi_str_mv |
10.1063/1.3699199 |
| facet_avail |
Online |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjM2OTkxOTk |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjM2OTkxOTk |
| institution |
DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-D161 |
| imprint |
AIP Publishing, 2012 |
| imprint_str_mv |
AIP Publishing, 2012 |
| issn |
0021-8979 1089-7550 |
| issn_str_mv |
0021-8979 1089-7550 |
| language |
English |
| mega_collection |
AIP Publishing (CrossRef) |
| match_str |
li2012impactofactivelayerdesignoninganradiativerecombinationcoefficientandledperformance |
| publishDateSort |
2012 |
| publisher |
AIP Publishing |
| recordtype |
ai |
| record_format |
ai |
| series |
Journal of Applied Physics |
| source_id |
49 |
| title |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_unstemmed |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_full |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_fullStr |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_full_unstemmed |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_short |
Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_sort |
impact of active layer design on ingan radiative recombination coefficient and led performance |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.3699199 |
| publishDate |
2012 |
| physical |
|
| description |
<jats:p>The relative roles of radiative and nonradiative processes and the polarization field on the light emission from blue (∼425 nm) InGaN light emitting diodes (LEDs) have been studied. Single and multiple double heterostructure (DH) designs have been investigated with multiple DH structures showing improved efficiencies. Experimental results supported by numerical simulations of injection dependent electron and hole wavefunction overlap and the corresponding radiative recombination coefficients suggest that increasing the effective active region thickness by employing multiple InGaN DH structures separated by thin and low barriers is promising for LEDs with high efficiency retention at high injection. The use of thin and low barriers is crucial to enhance carrier transport across the active region. Although increasing the single DH thickness from 3 to 6 nm improves the peak external quantum efficiency (EQE) by nearly 3.6 times due to increased density of states and increased emitting volume, the internal quantum efficiency (IQE) suffers a loss of nearly 30%. A further increase in the DH thickness to 9 and 11 nm results in a significantly slower rate of increase of EQE with current injection and lower peak EQE values presumably due to degradation of the InGaN material quality and reduced electron-hole spatial overlap. Increasing the number of 3 nm DH active regions separated by thin (3 nm) In0.06Ga0.94N barriers improves EQE, while maintaining high IQE (above 95% at a carrier concentration of 1018 cm−3) and showing negligible EQE degradation up to 550 A/cm2 in 400 × 400 μm2 devices due to increased emitting volume and high radiative recombination coefficients and high IQE. Time-resolved photoluminescence measurements revealed higher radiative recombination rates with increasing excitation due to screening of the internal field and enhanced electron and hole overlap at higher injection levels. To shed light on the experimental observations, the effect of free-carrier screening on the polarization field at different injection levels and the resulting impact on the quantum efficiency were investigated by numerical simulations.</jats:p> |
| container_issue |
6 |
| container_start_page |
0 |
| container_title |
Journal of Applied Physics |
| container_volume |
111 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792335068416442370 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T14:38:00.257Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Impact+of+active+layer+design+on+InGaN+radiative+recombination+coefficient+and+LED+performance&rft.date=2012-03-15&genre=article&issn=1089-7550&volume=111&issue=6&jtitle=Journal+of+Applied+Physics&atitle=Impact+of+active+layer+design+on+InGaN+radiative+recombination+coefficient+and+LED+performance&aulast=Matulionis&aufirst=A.&rft_id=info%3Adoi%2F10.1063%2F1.3699199&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792335068416442370 |
| author | Li, X., Okur, S., Zhang, F., Avrutin, V., Özgür, Ü., Morkoç, H., Hong, S. M., Yen, S. H., Hsu, T. C., Matulionis, A. |
| author_facet | Li, X., Okur, S., Zhang, F., Avrutin, V., Özgür, Ü., Morkoç, H., Hong, S. M., Yen, S. H., Hsu, T. C., Matulionis, A., Li, X., Okur, S., Zhang, F., Avrutin, V., Özgür, Ü., Morkoç, H., Hong, S. M., Yen, S. H., Hsu, T. C., Matulionis, A. |
| author_sort | li, x. |
| container_issue | 6 |
| container_start_page | 0 |
| container_title | Journal of Applied Physics |
| container_volume | 111 |
| description | <jats:p>The relative roles of radiative and nonradiative processes and the polarization field on the light emission from blue (∼425 nm) InGaN light emitting diodes (LEDs) have been studied. Single and multiple double heterostructure (DH) designs have been investigated with multiple DH structures showing improved efficiencies. Experimental results supported by numerical simulations of injection dependent electron and hole wavefunction overlap and the corresponding radiative recombination coefficients suggest that increasing the effective active region thickness by employing multiple InGaN DH structures separated by thin and low barriers is promising for LEDs with high efficiency retention at high injection. The use of thin and low barriers is crucial to enhance carrier transport across the active region. Although increasing the single DH thickness from 3 to 6 nm improves the peak external quantum efficiency (EQE) by nearly 3.6 times due to increased density of states and increased emitting volume, the internal quantum efficiency (IQE) suffers a loss of nearly 30%. A further increase in the DH thickness to 9 and 11 nm results in a significantly slower rate of increase of EQE with current injection and lower peak EQE values presumably due to degradation of the InGaN material quality and reduced electron-hole spatial overlap. Increasing the number of 3 nm DH active regions separated by thin (3 nm) In0.06Ga0.94N barriers improves EQE, while maintaining high IQE (above 95% at a carrier concentration of 1018 cm−3) and showing negligible EQE degradation up to 550 A/cm2 in 400 × 400 μm2 devices due to increased emitting volume and high radiative recombination coefficients and high IQE. Time-resolved photoluminescence measurements revealed higher radiative recombination rates with increasing excitation due to screening of the internal field and enhanced electron and hole overlap at higher injection levels. To shed light on the experimental observations, the effect of free-carrier screening on the polarization field at different injection levels and the resulting impact on the quantum efficiency were investigated by numerical simulations.</jats:p> |
| doi_str_mv | 10.1063/1.3699199 |
| facet_avail | Online |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjM2OTkxOTk |
| imprint | AIP Publishing, 2012 |
| imprint_str_mv | AIP Publishing, 2012 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
| issn | 0021-8979, 1089-7550 |
| issn_str_mv | 0021-8979, 1089-7550 |
| language | English |
| last_indexed | 2024-03-01T14:38:00.257Z |
| match_str | li2012impactofactivelayerdesignoninganradiativerecombinationcoefficientandledperformance |
| mega_collection | AIP Publishing (CrossRef) |
| physical | |
| publishDate | 2012 |
| publishDateSort | 2012 |
| publisher | AIP Publishing |
| record_format | ai |
| recordtype | ai |
| series | Journal of Applied Physics |
| source_id | 49 |
| spelling | Li, X. Okur, S. Zhang, F. Avrutin, V. Özgür, Ü. Morkoç, H. Hong, S. M. Yen, S. H. Hsu, T. C. Matulionis, A. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.3699199 <jats:p>The relative roles of radiative and nonradiative processes and the polarization field on the light emission from blue (∼425 nm) InGaN light emitting diodes (LEDs) have been studied. Single and multiple double heterostructure (DH) designs have been investigated with multiple DH structures showing improved efficiencies. Experimental results supported by numerical simulations of injection dependent electron and hole wavefunction overlap and the corresponding radiative recombination coefficients suggest that increasing the effective active region thickness by employing multiple InGaN DH structures separated by thin and low barriers is promising for LEDs with high efficiency retention at high injection. The use of thin and low barriers is crucial to enhance carrier transport across the active region. Although increasing the single DH thickness from 3 to 6 nm improves the peak external quantum efficiency (EQE) by nearly 3.6 times due to increased density of states and increased emitting volume, the internal quantum efficiency (IQE) suffers a loss of nearly 30%. A further increase in the DH thickness to 9 and 11 nm results in a significantly slower rate of increase of EQE with current injection and lower peak EQE values presumably due to degradation of the InGaN material quality and reduced electron-hole spatial overlap. Increasing the number of 3 nm DH active regions separated by thin (3 nm) In0.06Ga0.94N barriers improves EQE, while maintaining high IQE (above 95% at a carrier concentration of 1018 cm−3) and showing negligible EQE degradation up to 550 A/cm2 in 400 × 400 μm2 devices due to increased emitting volume and high radiative recombination coefficients and high IQE. Time-resolved photoluminescence measurements revealed higher radiative recombination rates with increasing excitation due to screening of the internal field and enhanced electron and hole overlap at higher injection levels. To shed light on the experimental observations, the effect of free-carrier screening on the polarization field at different injection levels and the resulting impact on the quantum efficiency were investigated by numerical simulations.</jats:p> Impact of active layer design on InGaN radiative recombination coefficient and LED performance Journal of Applied Physics |
| spellingShingle | Li, X., Okur, S., Zhang, F., Avrutin, V., Özgür, Ü., Morkoç, H., Hong, S. M., Yen, S. H., Hsu, T. C., Matulionis, A., Journal of Applied Physics, Impact of active layer design on InGaN radiative recombination coefficient and LED performance, General Physics and Astronomy |
| title | Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_full | Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_fullStr | Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_full_unstemmed | Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_short | Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| title_sort | impact of active layer design on ingan radiative recombination coefficient and led performance |
| title_unstemmed | Impact of active layer design on InGaN radiative recombination coefficient and LED performance |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.3699199 |