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Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer
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Journal Title: | Journal of Applied Physics |
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Authors and Corporations: | , |
In: | Journal of Applied Physics, 69, 1991, 10, p. 7322-7324 |
Type of Resource: | E-Article |
Language: | English |
published: |
AIP Publishing
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Subjects: |