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Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , |
| In: | Journal of Applied Physics, 69, 1991, 10, S. 7322-7324 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Chen, W. J. Chen, L. J. Chen, W. J. Chen, L. J. |
|---|---|
| author |
Chen, W. J. Chen, L. J. |
| spellingShingle |
Chen, W. J. Chen, L. J. Journal of Applied Physics Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer General Physics and Astronomy |
| author_sort |
chen, w. j. |
| spelling |
Chen, W. J. Chen, L. J. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.347583 <jats:p>A significant reduction in the density of end-of-range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.</jats:p> Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer Journal of Applied Physics |
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AIP Publishing, 1991 |
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AIP Publishing, 1991 |
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Journal of Applied Physics |
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49 |
| title |
Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_unstemmed |
Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_full |
Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_fullStr |
Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_full_unstemmed |
Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_short |
Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_sort |
removal of end-of-range defects in bf+2 implanted (111)si by the grain growth of thin nis2 overlayer |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.347583 |
| publishDate |
1991 |
| physical |
7322-7324 |
| description |
<jats:p>A significant reduction in the density of end-of-range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.</jats:p> |
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| author | Chen, W. J., Chen, L. J. |
| author_facet | Chen, W. J., Chen, L. J., Chen, W. J., Chen, L. J. |
| author_sort | chen, w. j. |
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| description | <jats:p>A significant reduction in the density of end-of-range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.</jats:p> |
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| imprint | AIP Publishing, 1991 |
| imprint_str_mv | AIP Publishing, 1991 |
| institution | DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Rs1, DE-Pl11, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1 |
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| language | English |
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| physical | 7322-7324 |
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| publisher | AIP Publishing |
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| series | Journal of Applied Physics |
| source_id | 49 |
| spelling | Chen, W. J. Chen, L. J. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.347583 <jats:p>A significant reduction in the density of end-of-range (EOR) defects was achieved in BF+2 implanted (111)Si by the formation and growth of a polycrystalline NiSi2 overlayer in samples annealed at 850–900 °C. In contrast, no apparent reduction in the density of EOR defects was found in BF+2 implanted silicon with no NiSi2 layer or with an epitaxial NiSi2 overlayer, subjected to the same heat treatment. The significant reduction in density of the EOR defects was correlated to the grain growth of thin polycrystalline NiSi2 overlayer. The availability of both polycrystalline and epitaxial NiSi2 on BF+2 implanted (111)Si made a direct comparison of the effects of different structures of the same silicide on the removal of the EOR defects possible.</jats:p> Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer Journal of Applied Physics |
| spellingShingle | Chen, W. J., Chen, L. J., Journal of Applied Physics, Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer, General Physics and Astronomy |
| title | Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_full | Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_fullStr | Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_full_unstemmed | Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_short | Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| title_sort | removal of end-of-range defects in bf+2 implanted (111)si by the grain growth of thin nis2 overlayer |
| title_unstemmed | Removal of end-of-range defects in BF+2 implanted (111)Si by the grain growth of thin NiS2 overlayer |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.347583 |