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Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , |
| In: | Journal of Applied Physics, 67, 1990, 1, S. 578-580 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Nobile, G. McMahon, T. J. Nobile, G. McMahon, T. J. |
|---|---|
| author |
Nobile, G. McMahon, T. J. |
| spellingShingle |
Nobile, G. McMahon, T. J. Journal of Applied Physics Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon General Physics and Astronomy |
| author_sort |
nobile, g. |
| spelling |
Nobile, G. McMahon, T. J. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.345198 <jats:p>We discuss the procedure of calculating the density of states in the gap for amorphous silicon by integrating the excess sub-band-gap absorption. We show that in general the proportionality coefficient between the density of states and the integrated sub-band-gap absorption is not unique. The sum rule has been used improperly since integration of the excess subgap absorption is terminated either at a fixed energy or at an energy which does not include all optical transitions to the conduction band. We estimate the errors that can arise from this procedure.</jats:p> Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon Journal of Applied Physics |
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AIP Publishing, 1990 |
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Journal of Applied Physics |
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| title |
Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_unstemmed |
Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_full |
Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_fullStr |
Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_full_unstemmed |
Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_short |
Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_sort |
limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.345198 |
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1990 |
| physical |
578-580 |
| description |
<jats:p>We discuss the procedure of calculating the density of states in the gap for amorphous silicon by integrating the excess sub-band-gap absorption. We show that in general the proportionality coefficient between the density of states and the integrated sub-band-gap absorption is not unique. The sum rule has been used improperly since integration of the excess subgap absorption is terminated either at a fixed energy or at an energy which does not include all optical transitions to the conduction band. We estimate the errors that can arise from this procedure.</jats:p> |
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| author | Nobile, G., McMahon, T. J. |
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| description | <jats:p>We discuss the procedure of calculating the density of states in the gap for amorphous silicon by integrating the excess sub-band-gap absorption. We show that in general the proportionality coefficient between the density of states and the integrated sub-band-gap absorption is not unique. The sum rule has been used improperly since integration of the excess subgap absorption is terminated either at a fixed energy or at an energy which does not include all optical transitions to the conduction band. We estimate the errors that can arise from this procedure.</jats:p> |
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| imprint | AIP Publishing, 1990 |
| imprint_str_mv | AIP Publishing, 1990 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| physical | 578-580 |
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| series | Journal of Applied Physics |
| source_id | 49 |
| spelling | Nobile, G. McMahon, T. J. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.345198 <jats:p>We discuss the procedure of calculating the density of states in the gap for amorphous silicon by integrating the excess sub-band-gap absorption. We show that in general the proportionality coefficient between the density of states and the integrated sub-band-gap absorption is not unique. The sum rule has been used improperly since integration of the excess subgap absorption is terminated either at a fixed energy or at an energy which does not include all optical transitions to the conduction band. We estimate the errors that can arise from this procedure.</jats:p> Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon Journal of Applied Physics |
| spellingShingle | Nobile, G., McMahon, T. J., Journal of Applied Physics, Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon, General Physics and Astronomy |
| title | Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_full | Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_fullStr | Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_full_unstemmed | Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_short | Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_sort | limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| title_unstemmed | Limitations of the integrated sub-band-gap absorption for determining the density of defects in amorphous silicon |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.345198 |