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Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | Journal of Applied Physics, 104, 2008, 2 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Hoummada, K. Mangelinck, D. Perrin, C. Carron, V. Holliger, P. Hoummada, K. Mangelinck, D. Perrin, C. Carron, V. Holliger, P. |
|---|---|
| author |
Hoummada, K. Mangelinck, D. Perrin, C. Carron, V. Holliger, P. |
| spellingShingle |
Hoummada, K. Mangelinck, D. Perrin, C. Carron, V. Holliger, P. Journal of Applied Physics Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions General Physics and Astronomy |
| author_sort |
hoummada, k. |
| spelling |
Hoummada, K. Mangelinck, D. Perrin, C. Carron, V. Holliger, P. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.2959643 <jats:p>The arsenic redistribution after NiSi formation has been measured by secondary ion mass spectrometry (SIMS). The NiSi film has been obtained by solid state reaction of a Ni thin film with a silicon substrate doped with As. An increase in the As SIMS signal at the NiSi/Si interface was observed for some experimental conditions. By varying the SIMS experimental parameters (incidence angle and the impact energy), the As signal at NiSi/Si interface was found to change. The SIMS experimental parameters have been optimized and were found to be an impact energy of 1 keV and an incidence angle superior to 50°. This allows us to minimize differences in sputtering rate and ion yield between NiSi and Si and to obtain a good depth resolution and dynamic range. Under these conditions the bump in the As signal does not appear: this illustrates the difficulty to measure concentration at interface by SIMS.</jats:p> Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions Journal of Applied Physics |
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| title |
Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_unstemmed |
Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_full |
Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_fullStr |
Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_full_unstemmed |
Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_short |
Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_sort |
measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.2959643 |
| publishDate |
2008 |
| physical |
|
| description |
<jats:p>The arsenic redistribution after NiSi formation has been measured by secondary ion mass spectrometry (SIMS). The NiSi film has been obtained by solid state reaction of a Ni thin film with a silicon substrate doped with As. An increase in the As SIMS signal at the NiSi/Si interface was observed for some experimental conditions. By varying the SIMS experimental parameters (incidence angle and the impact energy), the As signal at NiSi/Si interface was found to change. The SIMS experimental parameters have been optimized and were found to be an impact energy of 1 keV and an incidence angle superior to 50°. This allows us to minimize differences in sputtering rate and ion yield between NiSi and Si and to obtain a good depth resolution and dynamic range. Under these conditions the bump in the As signal does not appear: this illustrates the difficulty to measure concentration at interface by SIMS.</jats:p> |
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| author | Hoummada, K., Mangelinck, D., Perrin, C., Carron, V., Holliger, P. |
| author_facet | Hoummada, K., Mangelinck, D., Perrin, C., Carron, V., Holliger, P., Hoummada, K., Mangelinck, D., Perrin, C., Carron, V., Holliger, P. |
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| description | <jats:p>The arsenic redistribution after NiSi formation has been measured by secondary ion mass spectrometry (SIMS). The NiSi film has been obtained by solid state reaction of a Ni thin film with a silicon substrate doped with As. An increase in the As SIMS signal at the NiSi/Si interface was observed for some experimental conditions. By varying the SIMS experimental parameters (incidence angle and the impact energy), the As signal at NiSi/Si interface was found to change. The SIMS experimental parameters have been optimized and were found to be an impact energy of 1 keV and an incidence angle superior to 50°. This allows us to minimize differences in sputtering rate and ion yield between NiSi and Si and to obtain a good depth resolution and dynamic range. Under these conditions the bump in the As signal does not appear: this illustrates the difficulty to measure concentration at interface by SIMS.</jats:p> |
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| spelling | Hoummada, K. Mangelinck, D. Perrin, C. Carron, V. Holliger, P. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.2959643 <jats:p>The arsenic redistribution after NiSi formation has been measured by secondary ion mass spectrometry (SIMS). The NiSi film has been obtained by solid state reaction of a Ni thin film with a silicon substrate doped with As. An increase in the As SIMS signal at the NiSi/Si interface was observed for some experimental conditions. By varying the SIMS experimental parameters (incidence angle and the impact energy), the As signal at NiSi/Si interface was found to change. The SIMS experimental parameters have been optimized and were found to be an impact energy of 1 keV and an incidence angle superior to 50°. This allows us to minimize differences in sputtering rate and ion yield between NiSi and Si and to obtain a good depth resolution and dynamic range. Under these conditions the bump in the As signal does not appear: this illustrates the difficulty to measure concentration at interface by SIMS.</jats:p> Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions Journal of Applied Physics |
| spellingShingle | Hoummada, K., Mangelinck, D., Perrin, C., Carron, V., Holliger, P., Journal of Applied Physics, Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions, General Physics and Astronomy |
| title | Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_full | Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_fullStr | Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_full_unstemmed | Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_short | Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_sort | measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| title_unstemmed | Measurement of the redistribution of arsenic at nickel silicide/silicon interface by secondary ion mass spectrometry: artifact and optimized analysis conditions |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.2959643 |