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Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , |
| In: | Applied Physics Letters, 60, 1992, 13, S. 1579-1581 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Juang, M. H. Cheng, H. C. Juang, M. H. Cheng, H. C. |
|---|---|
| author |
Juang, M. H. Cheng, H. C. |
| spellingShingle |
Juang, M. H. Cheng, H. C. Applied Physics Letters Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate Physics and Astronomy (miscellaneous) |
| author_sort |
juang, m. h. |
| spelling |
Juang, M. H. Cheng, H. C. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.107257 <jats:p>A TiSi2 silicided shallow n+p junction with a leakage current density of about 3 nA/cm2, a forward ideality factor of 1.00, and a junction depth of about 0.11 μm has been fabricated by implanting P+ ions into thin amorphous-Si/Ti bilayer films on silicon substrate and subsequently processed by a rapid thermal annealing (RTA) at 800 °C/60 s with a post-conventional furnace annealing (CFA) at 600 °C/30 m. RTA not only minimizes the diffusion of knock-on Ti into the junction region, but also facilitates the silicidation and damage annihilation. The low-temperature CFA treatment following the high-temperature RTA process greatly increases the diffusion of dopants into the junction region and thus improves the junction characteristics significantly. The increased diffusion of dopants from the silicide layer into the junction region by the post-CFA process is attributed to the crystallization of the titanium silicide.</jats:p> Novel annealing scheme for fabricating high-quality Ti-silicided shallow <i>n</i>+<i>p</i> junction by P+ implantation into thin Ti films on Si substrate Applied Physics Letters |
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10.1063/1.107257 |
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AIP Publishing, 1992 |
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AIP Publishing, 1992 |
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Applied Physics Letters |
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49 |
| title |
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_unstemmed |
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_full |
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_fullStr |
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_full_unstemmed |
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_short |
Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_sort |
novel annealing scheme for fabricating high-quality ti-silicided shallow <i>n</i>+<i>p</i> junction by p+ implantation into thin ti films on si substrate |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.107257 |
| publishDate |
1992 |
| physical |
1579-1581 |
| description |
<jats:p>A TiSi2 silicided shallow n+p junction with a leakage current density of about 3 nA/cm2, a forward ideality factor of 1.00, and a junction depth of about 0.11 μm has been fabricated by implanting P+ ions into thin amorphous-Si/Ti bilayer films on silicon substrate and subsequently processed by a rapid thermal annealing (RTA) at 800 °C/60 s with a post-conventional furnace annealing (CFA) at 600 °C/30 m. RTA not only minimizes the diffusion of knock-on Ti into the junction region, but also facilitates the silicidation and damage annihilation. The low-temperature CFA treatment following the high-temperature RTA process greatly increases the diffusion of dopants into the junction region and thus improves the junction characteristics significantly. The increased diffusion of dopants from the silicide layer into the junction region by the post-CFA process is attributed to the crystallization of the titanium silicide.</jats:p> |
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| _version_ | 1792346382585036801 |
| author | Juang, M. H., Cheng, H. C. |
| author_facet | Juang, M. H., Cheng, H. C., Juang, M. H., Cheng, H. C. |
| author_sort | juang, m. h. |
| container_issue | 13 |
| container_start_page | 1579 |
| container_title | Applied Physics Letters |
| container_volume | 60 |
| description | <jats:p>A TiSi2 silicided shallow n+p junction with a leakage current density of about 3 nA/cm2, a forward ideality factor of 1.00, and a junction depth of about 0.11 μm has been fabricated by implanting P+ ions into thin amorphous-Si/Ti bilayer films on silicon substrate and subsequently processed by a rapid thermal annealing (RTA) at 800 °C/60 s with a post-conventional furnace annealing (CFA) at 600 °C/30 m. RTA not only minimizes the diffusion of knock-on Ti into the junction region, but also facilitates the silicidation and damage annihilation. The low-temperature CFA treatment following the high-temperature RTA process greatly increases the diffusion of dopants into the junction region and thus improves the junction characteristics significantly. The increased diffusion of dopants from the silicide layer into the junction region by the post-CFA process is attributed to the crystallization of the titanium silicide.</jats:p> |
| doi_str_mv | 10.1063/1.107257 |
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| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjEwNzI1Nw |
| imprint | AIP Publishing, 1992 |
| imprint_str_mv | AIP Publishing, 1992 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
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| language | English |
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| physical | 1579-1581 |
| publishDate | 1992 |
| publishDateSort | 1992 |
| publisher | AIP Publishing |
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| recordtype | ai |
| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Juang, M. H. Cheng, H. C. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.107257 <jats:p>A TiSi2 silicided shallow n+p junction with a leakage current density of about 3 nA/cm2, a forward ideality factor of 1.00, and a junction depth of about 0.11 μm has been fabricated by implanting P+ ions into thin amorphous-Si/Ti bilayer films on silicon substrate and subsequently processed by a rapid thermal annealing (RTA) at 800 °C/60 s with a post-conventional furnace annealing (CFA) at 600 °C/30 m. RTA not only minimizes the diffusion of knock-on Ti into the junction region, but also facilitates the silicidation and damage annihilation. The low-temperature CFA treatment following the high-temperature RTA process greatly increases the diffusion of dopants into the junction region and thus improves the junction characteristics significantly. The increased diffusion of dopants from the silicide layer into the junction region by the post-CFA process is attributed to the crystallization of the titanium silicide.</jats:p> Novel annealing scheme for fabricating high-quality Ti-silicided shallow <i>n</i>+<i>p</i> junction by P+ implantation into thin Ti films on Si substrate Applied Physics Letters |
| spellingShingle | Juang, M. H., Cheng, H. C., Applied Physics Letters, Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate, Physics and Astronomy (miscellaneous) |
| title | Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_full | Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_fullStr | Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_full_unstemmed | Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_short | Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| title_sort | novel annealing scheme for fabricating high-quality ti-silicided shallow <i>n</i>+<i>p</i> junction by p+ implantation into thin ti films on si substrate |
| title_unstemmed | Novel annealing scheme for fabricating high-quality Ti-silicided shallow n+p junction by P+ implantation into thin Ti films on Si substrate |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.107257 |