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Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC
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| Zeitschriftentitel: | Materials Science Forum |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , , , |
| In: | Materials Science Forum, 924, 2018, S. 188-191 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
Trans Tech Publications, Ltd.
|
| Schlagwörter: |
| author_facet |
Matsuura, Hideharu Takeshita, Akinobu Imamura, Tatsuya Takano, Kota Okuda, Kazuya Hidaka, Atsuki Ji, Shi Yang Eto, Kazuma Kojima, Kazutoshi Kato, Tomohisa Yoshida, Sadafumi Okumura, Hajime Matsuura, Hideharu Takeshita, Akinobu Imamura, Tatsuya Takano, Kota Okuda, Kazuya Hidaka, Atsuki Ji, Shi Yang Eto, Kazuma Kojima, Kazutoshi Kato, Tomohisa Yoshida, Sadafumi Okumura, Hajime |
|---|---|
| author |
Matsuura, Hideharu Takeshita, Akinobu Imamura, Tatsuya Takano, Kota Okuda, Kazuya Hidaka, Atsuki Ji, Shi Yang Eto, Kazuma Kojima, Kazutoshi Kato, Tomohisa Yoshida, Sadafumi Okumura, Hajime |
| spellingShingle |
Matsuura, Hideharu Takeshita, Akinobu Imamura, Tatsuya Takano, Kota Okuda, Kazuya Hidaka, Atsuki Ji, Shi Yang Eto, Kazuma Kojima, Kazutoshi Kato, Tomohisa Yoshida, Sadafumi Okumura, Hajime Materials Science Forum Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science |
| author_sort |
matsuura, hideharu |
| spelling |
Matsuura, Hideharu Takeshita, Akinobu Imamura, Tatsuya Takano, Kota Okuda, Kazuya Hidaka, Atsuki Ji, Shi Yang Eto, Kazuma Kojima, Kazutoshi Kato, Tomohisa Yoshida, Sadafumi Okumura, Hajime 1662-9752 Trans Tech Publications, Ltd. Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science http://dx.doi.org/10.4028/www.scientific.net/msf.924.188 <jats:p>The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (<jats:italic>C</jats:italic><jats:sub>Al</jats:sub>) between 4x10<jats:sup>19</jats:sup> and 2x10<jats:sup>20</jats:sup> cm<jats:sup>-3</jats:sup>, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with <jats:italic>C</jats:italic><jats:sub>Al</jats:sub> between 1x10<jats:sup>19</jats:sup> and 4x10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>, an unexpected conduction appeared between the regions of the band and NNH conductions.</jats:p> Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Materials Science Forum |
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DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 |
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Trans Tech Publications, Ltd., 2018 |
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Trans Tech Publications, Ltd., 2018 |
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| title |
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_unstemmed |
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_full |
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_fullStr |
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_full_unstemmed |
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_short |
Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_sort |
comparison of conduction mechanisms in heavily al-doped 4h-sic and heavily al- and n-codoped 4h-sic |
| topic |
Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science |
| url |
http://dx.doi.org/10.4028/www.scientific.net/msf.924.188 |
| publishDate |
2018 |
| physical |
188-191 |
| description |
<jats:p>The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (<jats:italic>C</jats:italic><jats:sub>Al</jats:sub>) between 4x10<jats:sup>19</jats:sup> and 2x10<jats:sup>20</jats:sup> cm<jats:sup>-3</jats:sup>, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with <jats:italic>C</jats:italic><jats:sub>Al</jats:sub> between 1x10<jats:sup>19</jats:sup> and 4x10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>, an unexpected conduction appeared between the regions of the band and NNH conductions.</jats:p> |
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| author | Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime |
| author_facet | Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime, Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime |
| author_sort | matsuura, hideharu |
| container_start_page | 188 |
| container_title | Materials Science Forum |
| container_volume | 924 |
| description | <jats:p>The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (<jats:italic>C</jats:italic><jats:sub>Al</jats:sub>) between 4x10<jats:sup>19</jats:sup> and 2x10<jats:sup>20</jats:sup> cm<jats:sup>-3</jats:sup>, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with <jats:italic>C</jats:italic><jats:sub>Al</jats:sub> between 1x10<jats:sup>19</jats:sup> and 4x10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>, an unexpected conduction appeared between the regions of the band and NNH conductions.</jats:p> |
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| imprint | Trans Tech Publications, Ltd., 2018 |
| imprint_str_mv | Trans Tech Publications, Ltd., 2018 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| physical | 188-191 |
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| spelling | Matsuura, Hideharu Takeshita, Akinobu Imamura, Tatsuya Takano, Kota Okuda, Kazuya Hidaka, Atsuki Ji, Shi Yang Eto, Kazuma Kojima, Kazutoshi Kato, Tomohisa Yoshida, Sadafumi Okumura, Hajime 1662-9752 Trans Tech Publications, Ltd. Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science http://dx.doi.org/10.4028/www.scientific.net/msf.924.188 <jats:p>The conduction mechanism in heavily Al-doped or heavily Al-and N-codoped p-type 4H-SiC epilayers was investigated. In both the singly-doped and codoped samples with an Al concentration (<jats:italic>C</jats:italic><jats:sub>Al</jats:sub>) between 4x10<jats:sup>19</jats:sup> and 2x10<jats:sup>20</jats:sup> cm<jats:sup>-3</jats:sup>, band and nearest-neighbor hopping (NNH) conductions appeared in high and low temperature ranges, respectively. The codoping of N donors makes the NNH conduction dominant at temperatures higher than in the singly-doped samples. In both the singly-doped and codoped samples with <jats:italic>C</jats:italic><jats:sub>Al</jats:sub> between 1x10<jats:sup>19</jats:sup> and 4x10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>, an unexpected conduction appeared between the regions of the band and NNH conductions.</jats:p> Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC Materials Science Forum |
| spellingShingle | Matsuura, Hideharu, Takeshita, Akinobu, Imamura, Tatsuya, Takano, Kota, Okuda, Kazuya, Hidaka, Atsuki, Ji, Shi Yang, Eto, Kazuma, Kojima, Kazutoshi, Kato, Tomohisa, Yoshida, Sadafumi, Okumura, Hajime, Materials Science Forum, Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC, Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| title | Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_full | Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_fullStr | Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_full_unstemmed | Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_short | Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| title_sort | comparison of conduction mechanisms in heavily al-doped 4h-sic and heavily al- and n-codoped 4h-sic |
| title_unstemmed | Comparison of Conduction Mechanisms in Heavily Al-Doped 4H-SiC and Heavily Al- and N-Codoped 4H-SiC |
| topic | Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| url | http://dx.doi.org/10.4028/www.scientific.net/msf.924.188 |