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Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation
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| Zeitschriftentitel: | Materials Science Forum |
|---|---|
| Personen und Körperschaften: | , , , , , , |
| In: | Materials Science Forum, 821-823, 2015, S. 205-208 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
Trans Tech Publications, Ltd.
|
| Schlagwörter: |
| author_facet |
Wang, Li Dimitrijev, Sima Iacopi, Alan Hold, Leonie Walker, Glenn Chai, Jessica Massoubre, David Wang, Li Dimitrijev, Sima Iacopi, Alan Hold, Leonie Walker, Glenn Chai, Jessica Massoubre, David |
|---|---|
| author |
Wang, Li Dimitrijev, Sima Iacopi, Alan Hold, Leonie Walker, Glenn Chai, Jessica Massoubre, David |
| spellingShingle |
Wang, Li Dimitrijev, Sima Iacopi, Alan Hold, Leonie Walker, Glenn Chai, Jessica Massoubre, David Materials Science Forum Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science |
| author_sort |
wang, li |
| spelling |
Wang, Li Dimitrijev, Sima Iacopi, Alan Hold, Leonie Walker, Glenn Chai, Jessica Massoubre, David 1662-9752 Trans Tech Publications, Ltd. Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.205 <jats:p>To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH<jats:sub>4</jats:sub> avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.</jats:p> Si Surface Preparation for Heteroepitaxial Growth of SiC Using <i>In Situ</i> Oxidation Materials Science Forum |
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| title |
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_unstemmed |
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_full |
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_fullStr |
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_full_unstemmed |
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_short |
Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_sort |
si surface preparation for heteroepitaxial growth of sic using <i>in situ</i> oxidation |
| topic |
Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science |
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http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.205 |
| publishDate |
2015 |
| physical |
205-208 |
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<jats:p>To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH<jats:sub>4</jats:sub> avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.</jats:p> |
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| author | Wang, Li, Dimitrijev, Sima, Iacopi, Alan, Hold, Leonie, Walker, Glenn, Chai, Jessica, Massoubre, David |
| author_facet | Wang, Li, Dimitrijev, Sima, Iacopi, Alan, Hold, Leonie, Walker, Glenn, Chai, Jessica, Massoubre, David, Wang, Li, Dimitrijev, Sima, Iacopi, Alan, Hold, Leonie, Walker, Glenn, Chai, Jessica, Massoubre, David |
| author_sort | wang, li |
| container_start_page | 205 |
| container_title | Materials Science Forum |
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| description | <jats:p>To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH<jats:sub>4</jats:sub> avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.</jats:p> |
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| spelling | Wang, Li Dimitrijev, Sima Iacopi, Alan Hold, Leonie Walker, Glenn Chai, Jessica Massoubre, David 1662-9752 Trans Tech Publications, Ltd. Mechanical Engineering Mechanics of Materials Condensed Matter Physics General Materials Science http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.205 <jats:p>To achieve high quality SiC growth on Si substrate, it is essential to get a smooth Si surface without forming SiC and graphitic islands during the surface cleaning and before the carbonisation process. In this paper, a novel in-situ surface cleaning method designed for the hetero-epitaxial growth of SiC on Si substrate is developed using a custom-made low-pressure chemical vapour deposition reactor. The results indicate that the combination of ramping in oxygen and subsequent flowing of SiH<jats:sub>4</jats:sub> avoids the contamination of Si, enables the oxide layer to be removed smoothly, and subsequently creates a smooth Si surface with regular atomic steps. SiC grown on off-axis Si has better crystallinity and significantly smaller roughness than that grown on on-axis Si.</jats:p> Si Surface Preparation for Heteroepitaxial Growth of SiC Using <i>In Situ</i> Oxidation Materials Science Forum |
| spellingShingle | Wang, Li, Dimitrijev, Sima, Iacopi, Alan, Hold, Leonie, Walker, Glenn, Chai, Jessica, Massoubre, David, Materials Science Forum, Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation, Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| title | Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_full | Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_fullStr | Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_full_unstemmed | Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_short | Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| title_sort | si surface preparation for heteroepitaxial growth of sic using <i>in situ</i> oxidation |
| title_unstemmed | Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation |
| topic | Mechanical Engineering, Mechanics of Materials, Condensed Matter Physics, General Materials Science |
| url | http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.205 |