author_facet Lv, Jing
Lv, Jing
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spellingShingle Lv, Jing
Advanced Materials Research
Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
General Engineering
author_sort lv, jing
spelling Lv, Jing 1662-8985 Trans Tech Publications, Ltd. General Engineering http://dx.doi.org/10.4028/www.scientific.net/amr.634-638.2458 <jats:p>Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.</jats:p> Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation Advanced Materials Research
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series Advanced Materials Research
source_id 49
title Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_unstemmed Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_full Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_fullStr Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_full_unstemmed Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_short Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_sort effects of annealing in air on structure and properties of al films prepared by thermal evaporation
topic General Engineering
url http://dx.doi.org/10.4028/www.scientific.net/amr.634-638.2458
publishDate 2013
physical 2458-2461
description <jats:p>Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.</jats:p>
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author Lv, Jing
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author_sort lv, jing
container_start_page 2458
container_title Advanced Materials Research
container_volume 634-638
description <jats:p>Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.</jats:p>
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imprint_str_mv Trans Tech Publications, Ltd., 2013
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spelling Lv, Jing 1662-8985 Trans Tech Publications, Ltd. General Engineering http://dx.doi.org/10.4028/www.scientific.net/amr.634-638.2458 <jats:p>Al films were prepared on quartz substrates by thermal evaporation. The effects of annealing in air on structure and optical and electrical properties have been studied. It is found that the annealing in air will affect on structure and morphology of the films, which results in the difference in the optical and electrical properties. The as-deposited film is amorphous, the films annealed at 200 and 400oC are polycrystalline. After annealed at 600oC, the film was oxidized and changed to porous γ-Al2O3. The film annealed at 200 oC has the maximum reflectance and at 400 oC has the minimum resistivity in all samples. While for the film annealed at 600 oC, the resistivity is close to be infinite, the reflectance is the minimum at wavelength ranging from 400 to 800 nm in all the samples.</jats:p> Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation Advanced Materials Research
spellingShingle Lv, Jing, Advanced Materials Research, Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation, General Engineering
title Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_full Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_fullStr Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_full_unstemmed Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_short Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
title_sort effects of annealing in air on structure and properties of al films prepared by thermal evaporation
title_unstemmed Effects of Annealing in Air on Structure and Properties of Al Films Prepared by Thermal Evaporation
topic General Engineering
url http://dx.doi.org/10.4028/www.scientific.net/amr.634-638.2458