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Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System
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| Zeitschriftentitel: | Advanced Materials Research |
|---|---|
| Personen und Körperschaften: | , |
| In: | Advanced Materials Research, 415-417, 2011, S. 1611-1614 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
Trans Tech Publications, Ltd.
|
| Schlagwörter: |
| author_facet |
Lu, Lin Li, Xiao Gang Lu, Lin Li, Xiao Gang |
|---|---|
| author |
Lu, Lin Li, Xiao Gang |
| spellingShingle |
Lu, Lin Li, Xiao Gang Advanced Materials Research Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System General Engineering |
| author_sort |
lu, lin |
| spelling |
Lu, Lin Li, Xiao Gang 1662-8985 Trans Tech Publications, Ltd. General Engineering http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1611 <jats:p>For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS<jats:sub>2</jats:sub> thin film, potassium hydrogen phthalate (C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub>), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS<jats:sub>2</jats:sub> thin film was determined by orthogonal experiment method. The effect of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> on the composition and Mott–Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>; the addition of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.</jats:p> Improvement of the Properties of CuInS<sub>2</sub> Thin Film Prepared in Sulfate System Advanced Materials Research |
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Advanced Materials Research |
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49 |
| title |
Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_unstemmed |
Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_full |
Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_fullStr |
Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_full_unstemmed |
Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_short |
Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_sort |
improvement of the properties of cuins<sub>2</sub> thin film prepared in sulfate system |
| topic |
General Engineering |
| url |
http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1611 |
| publishDate |
2011 |
| physical |
1611-1614 |
| description |
<jats:p>For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS<jats:sub>2</jats:sub> thin film, potassium hydrogen phthalate (C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub>), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS<jats:sub>2</jats:sub> thin film was determined by orthogonal experiment method. The effect of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> on the composition and Mott–Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>; the addition of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.</jats:p> |
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| author | Lu, Lin, Li, Xiao Gang |
| author_facet | Lu, Lin, Li, Xiao Gang, Lu, Lin, Li, Xiao Gang |
| author_sort | lu, lin |
| container_start_page | 1611 |
| container_title | Advanced Materials Research |
| container_volume | 415-417 |
| description | <jats:p>For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS<jats:sub>2</jats:sub> thin film, potassium hydrogen phthalate (C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub>), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS<jats:sub>2</jats:sub> thin film was determined by orthogonal experiment method. The effect of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> on the composition and Mott–Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>; the addition of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.</jats:p> |
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| imprint | Trans Tech Publications, Ltd., 2011 |
| imprint_str_mv | Trans Tech Publications, Ltd., 2011 |
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| physical | 1611-1614 |
| publishDate | 2011 |
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| publisher | Trans Tech Publications, Ltd. |
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| series | Advanced Materials Research |
| source_id | 49 |
| spelling | Lu, Lin Li, Xiao Gang 1662-8985 Trans Tech Publications, Ltd. General Engineering http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1611 <jats:p>For the purpose of improving the reproducibility and the semiconductor properties of chalcopyrite CuInS<jats:sub>2</jats:sub> thin film, potassium hydrogen phthalate (C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub>), as a complex agent, was added into the sulphate bath system. The optimum process parameter for the preparation of CuInS<jats:sub>2</jats:sub> thin film was determined by orthogonal experiment method. The effect of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> on the composition and Mott–Schottky behavior of the as-deposited film was studied with electron dispersion spectroscopy (EDS) and alternating current (AC) measurement. It was found that the as-deposited film was p-type semiconductor with the flatband of 0.665 V and the acceptor density of 3.06×10<jats:sup>19</jats:sup> cm<jats:sup>-3</jats:sup>; the addition of C<jats:sub>8</jats:sub>H<jats:sub>5</jats:sub>KO<jats:sub>4</jats:sub> can effectively enhance the composition stability of the film and decrease its flatband potential and acceptor density.</jats:p> Improvement of the Properties of CuInS<sub>2</sub> Thin Film Prepared in Sulfate System Advanced Materials Research |
| spellingShingle | Lu, Lin, Li, Xiao Gang, Advanced Materials Research, Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System, General Engineering |
| title | Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_full | Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_fullStr | Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_full_unstemmed | Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_short | Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| title_sort | improvement of the properties of cuins<sub>2</sub> thin film prepared in sulfate system |
| title_unstemmed | Improvement of the Properties of CuInS2 Thin Film Prepared in Sulfate System |
| topic | General Engineering |
| url | http://dx.doi.org/10.4028/www.scientific.net/amr.415-417.1611 |