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Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment
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| Zeitschriftentitel: | Advanced Materials Research |
|---|---|
| Personen und Körperschaften: | , , , |
| In: | Advanced Materials Research, 239-242, 2011, S. 1002-1005 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
Trans Tech Publications, Ltd.
|
| Schlagwörter: |
| author_facet |
Chen, Kai Huang Wu, Chia Lin Lin, Jian Yang Cheng, Chien Min Chen, Kai Huang Wu, Chia Lin Lin, Jian Yang Cheng, Chien Min |
|---|---|
| author |
Chen, Kai Huang Wu, Chia Lin Lin, Jian Yang Cheng, Chien Min |
| spellingShingle |
Chen, Kai Huang Wu, Chia Lin Lin, Jian Yang Cheng, Chien Min Advanced Materials Research Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment General Engineering |
| author_sort |
chen, kai huang |
| spelling |
Chen, Kai Huang Wu, Chia Lin Lin, Jian Yang Cheng, Chien Min 1662-8985 Trans Tech Publications, Ltd. General Engineering http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.1002 <jats:p>To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.</jats:p> Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba<sub>0.7</sub>Sr<sub>0.3</sub>)(Ti<sub>0.9</sub>Zr<sub>0.1</sub>)O<sub>3</sub> Thin Films Using by Plasma Treatment Advanced Materials Research |
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Trans Tech Publications, Ltd., 2011 |
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Trans Tech Publications, Ltd., 2011 |
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2011 |
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Advanced Materials Research |
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49 |
| title |
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_unstemmed |
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_full |
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_fullStr |
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_full_unstemmed |
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_short |
Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_sort |
improvement on oxygen vacancies effect of high dielectric constant (ba<sub>0.7</sub>sr<sub>0.3</sub>)(ti<sub>0.9</sub>zr<sub>0.1</sub>)o<sub>3</sub> thin films using by plasma treatment |
| topic |
General Engineering |
| url |
http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.1002 |
| publishDate |
2011 |
| physical |
1002-1005 |
| description |
<jats:p>To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.</jats:p> |
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| author | Chen, Kai Huang, Wu, Chia Lin, Lin, Jian Yang, Cheng, Chien Min |
| author_facet | Chen, Kai Huang, Wu, Chia Lin, Lin, Jian Yang, Cheng, Chien Min, Chen, Kai Huang, Wu, Chia Lin, Lin, Jian Yang, Cheng, Chien Min |
| author_sort | chen, kai huang |
| container_start_page | 1002 |
| container_title | Advanced Materials Research |
| container_volume | 239-242 |
| description | <jats:p>To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.</jats:p> |
| doi_str_mv | 10.4028/www.scientific.net/amr.239-242.1002 |
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| imprint | Trans Tech Publications, Ltd., 2011 |
| imprint_str_mv | Trans Tech Publications, Ltd., 2011 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Rs1, DE-Pl11, DE-105, DE-14, DE-Ch1, DE-L229 |
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| mega_collection | Trans Tech Publications, Ltd. (CrossRef) |
| physical | 1002-1005 |
| publishDate | 2011 |
| publishDateSort | 2011 |
| publisher | Trans Tech Publications, Ltd. |
| record_format | ai |
| recordtype | ai |
| series | Advanced Materials Research |
| source_id | 49 |
| spelling | Chen, Kai Huang Wu, Chia Lin Lin, Jian Yang Cheng, Chien Min 1662-8985 Trans Tech Publications, Ltd. General Engineering http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.1002 <jats:p>To improve the electrical and physical properties of as-deposited BSTZ thin films, the oxygen plasma treatment process were used by a low temperature treatment. In this study, the BSTZ thin films were post-treated under 150°C and 25 mTorr in the inductively coupled plasma. After oxygen plasma process treatment, the capacitance of thin films increased from 150 to 300pF in C-V curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. The influence of oxygen plasma on the chemical bonding state and crystalline structure was investigated by using XPS and XRD measurement.</jats:p> Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba<sub>0.7</sub>Sr<sub>0.3</sub>)(Ti<sub>0.9</sub>Zr<sub>0.1</sub>)O<sub>3</sub> Thin Films Using by Plasma Treatment Advanced Materials Research |
| spellingShingle | Chen, Kai Huang, Wu, Chia Lin, Lin, Jian Yang, Cheng, Chien Min, Advanced Materials Research, Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment, General Engineering |
| title | Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_full | Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_fullStr | Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_full_unstemmed | Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_short | Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| title_sort | improvement on oxygen vacancies effect of high dielectric constant (ba<sub>0.7</sub>sr<sub>0.3</sub>)(ti<sub>0.9</sub>zr<sub>0.1</sub>)o<sub>3</sub> thin films using by plasma treatment |
| title_unstemmed | Improvement on Oxygen Vacancies Effect of High Dielectric Constant (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 Thin Films Using by Plasma Treatment |
| topic | General Engineering |
| url | http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.1002 |