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Copper atomic-scale transistors
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| Zeitschriftentitel: | Beilstein Journal of Nanotechnology |
|---|---|
| Personen und Körperschaften: | , , , , , , |
| In: | Beilstein Journal of Nanotechnology, 8, 2017, S. 530-538 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Beilstein Institut
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| Schlagwörter: |
| author_facet |
Xie, Fangqing Kavalenka, Maryna N Röger, Moritz Albrecht, Daniel Hölscher, Hendrik Leuthold, Jürgen Schimmel, Thomas Xie, Fangqing Kavalenka, Maryna N Röger, Moritz Albrecht, Daniel Hölscher, Hendrik Leuthold, Jürgen Schimmel, Thomas |
|---|---|
| author |
Xie, Fangqing Kavalenka, Maryna N Röger, Moritz Albrecht, Daniel Hölscher, Hendrik Leuthold, Jürgen Schimmel, Thomas |
| spellingShingle |
Xie, Fangqing Kavalenka, Maryna N Röger, Moritz Albrecht, Daniel Hölscher, Hendrik Leuthold, Jürgen Schimmel, Thomas Beilstein Journal of Nanotechnology Copper atomic-scale transistors Electrical and Electronic Engineering General Physics and Astronomy General Materials Science |
| author_sort |
xie, fangqing |
| spelling |
Xie, Fangqing Kavalenka, Maryna N Röger, Moritz Albrecht, Daniel Hölscher, Hendrik Leuthold, Jürgen Schimmel, Thomas 2190-4286 Beilstein Institut Electrical and Electronic Engineering General Physics and Astronomy General Materials Science http://dx.doi.org/10.3762/bjnano.8.57 <jats:p>We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO<jats:sub>4</jats:sub> + H<jats:sub>2</jats:sub>SO<jats:sub>4</jats:sub>) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (<jats:italic>U</jats:italic><jats:sub>bias</jats:sub>) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1<jats:italic>G</jats:italic><jats:sub>0</jats:sub> (<jats:italic>G</jats:italic><jats:sub>0</jats:sub> = 2e<jats:sup>2</jats:sup>/h; with <jats:italic>e</jats:italic> being the electron charge, and <jats:italic>h</jats:italic> being Planck’s constant) or 2<jats:italic>G</jats:italic><jats:sub>0</jats:sub> by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.</jats:p> Copper atomic-scale transistors Beilstein Journal of Nanotechnology |
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| title |
Copper atomic-scale transistors |
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Copper atomic-scale transistors |
| title_full |
Copper atomic-scale transistors |
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Copper atomic-scale transistors |
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Copper atomic-scale transistors |
| title_short |
Copper atomic-scale transistors |
| title_sort |
copper atomic-scale transistors |
| topic |
Electrical and Electronic Engineering General Physics and Astronomy General Materials Science |
| url |
http://dx.doi.org/10.3762/bjnano.8.57 |
| publishDate |
2017 |
| physical |
530-538 |
| description |
<jats:p>We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO<jats:sub>4</jats:sub> + H<jats:sub>2</jats:sub>SO<jats:sub>4</jats:sub>) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (<jats:italic>U</jats:italic><jats:sub>bias</jats:sub>) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1<jats:italic>G</jats:italic><jats:sub>0</jats:sub> (<jats:italic>G</jats:italic><jats:sub>0</jats:sub> = 2e<jats:sup>2</jats:sup>/h; with <jats:italic>e</jats:italic> being the electron charge, and <jats:italic>h</jats:italic> being Planck’s constant) or 2<jats:italic>G</jats:italic><jats:sub>0</jats:sub> by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.</jats:p> |
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| author | Xie, Fangqing, Kavalenka, Maryna N, Röger, Moritz, Albrecht, Daniel, Hölscher, Hendrik, Leuthold, Jürgen, Schimmel, Thomas |
| author_facet | Xie, Fangqing, Kavalenka, Maryna N, Röger, Moritz, Albrecht, Daniel, Hölscher, Hendrik, Leuthold, Jürgen, Schimmel, Thomas, Xie, Fangqing, Kavalenka, Maryna N, Röger, Moritz, Albrecht, Daniel, Hölscher, Hendrik, Leuthold, Jürgen, Schimmel, Thomas |
| author_sort | xie, fangqing |
| container_start_page | 530 |
| container_title | Beilstein Journal of Nanotechnology |
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| description | <jats:p>We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO<jats:sub>4</jats:sub> + H<jats:sub>2</jats:sub>SO<jats:sub>4</jats:sub>) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (<jats:italic>U</jats:italic><jats:sub>bias</jats:sub>) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1<jats:italic>G</jats:italic><jats:sub>0</jats:sub> (<jats:italic>G</jats:italic><jats:sub>0</jats:sub> = 2e<jats:sup>2</jats:sup>/h; with <jats:italic>e</jats:italic> being the electron charge, and <jats:italic>h</jats:italic> being Planck’s constant) or 2<jats:italic>G</jats:italic><jats:sub>0</jats:sub> by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.</jats:p> |
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| imprint_str_mv | Beilstein Institut, 2017 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Zwi2, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| spelling | Xie, Fangqing Kavalenka, Maryna N Röger, Moritz Albrecht, Daniel Hölscher, Hendrik Leuthold, Jürgen Schimmel, Thomas 2190-4286 Beilstein Institut Electrical and Electronic Engineering General Physics and Astronomy General Materials Science http://dx.doi.org/10.3762/bjnano.8.57 <jats:p>We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO<jats:sub>4</jats:sub> + H<jats:sub>2</jats:sub>SO<jats:sub>4</jats:sub>) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (<jats:italic>U</jats:italic><jats:sub>bias</jats:sub>) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1<jats:italic>G</jats:italic><jats:sub>0</jats:sub> (<jats:italic>G</jats:italic><jats:sub>0</jats:sub> = 2e<jats:sup>2</jats:sup>/h; with <jats:italic>e</jats:italic> being the electron charge, and <jats:italic>h</jats:italic> being Planck’s constant) or 2<jats:italic>G</jats:italic><jats:sub>0</jats:sub> by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.</jats:p> Copper atomic-scale transistors Beilstein Journal of Nanotechnology |
| spellingShingle | Xie, Fangqing, Kavalenka, Maryna N, Röger, Moritz, Albrecht, Daniel, Hölscher, Hendrik, Leuthold, Jürgen, Schimmel, Thomas, Beilstein Journal of Nanotechnology, Copper atomic-scale transistors, Electrical and Electronic Engineering, General Physics and Astronomy, General Materials Science |
| title | Copper atomic-scale transistors |
| title_full | Copper atomic-scale transistors |
| title_fullStr | Copper atomic-scale transistors |
| title_full_unstemmed | Copper atomic-scale transistors |
| title_short | Copper atomic-scale transistors |
| title_sort | copper atomic-scale transistors |
| title_unstemmed | Copper atomic-scale transistors |
| topic | Electrical and Electronic Engineering, General Physics and Astronomy, General Materials Science |
| url | http://dx.doi.org/10.3762/bjnano.8.57 |