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Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale
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| Zeitschriftentitel: | Micromachines |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | Micromachines, 11, 2020, 1, S. 102 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
MDPI AG
|
| Schlagwörter: |
| author_facet |
Chai, Peng Li, Shujuan Li, Yan Liang, Lie Yin, Xincheng Chai, Peng Li, Shujuan Li, Yan Liang, Lie Yin, Xincheng |
|---|---|
| author |
Chai, Peng Li, Shujuan Li, Yan Liang, Lie Yin, Xincheng |
| spellingShingle |
Chai, Peng Li, Shujuan Li, Yan Liang, Lie Yin, Xincheng Micromachines Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering |
| author_sort |
chai, peng |
| spelling |
Chai, Peng Li, Shujuan Li, Yan Liang, Lie Yin, Xincheng 2072-666X MDPI AG Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering http://dx.doi.org/10.3390/mi11010102 <jats:p>In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic–brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.</jats:p> Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale Micromachines |
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| title |
Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_unstemmed |
Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_full |
Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_fullStr |
Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_full_unstemmed |
Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_short |
Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_sort |
mechanical behavior investigation of 4h-sic single crystal at the micro–nano scale |
| topic |
Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering |
| url |
http://dx.doi.org/10.3390/mi11010102 |
| publishDate |
2020 |
| physical |
102 |
| description |
<jats:p>In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic–brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.</jats:p> |
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| author | Chai, Peng, Li, Shujuan, Li, Yan, Liang, Lie, Yin, Xincheng |
| author_facet | Chai, Peng, Li, Shujuan, Li, Yan, Liang, Lie, Yin, Xincheng, Chai, Peng, Li, Shujuan, Li, Yan, Liang, Lie, Yin, Xincheng |
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| description | <jats:p>In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic–brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.</jats:p> |
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| physical | 102 |
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| series | Micromachines |
| source_id | 49 |
| spelling | Chai, Peng Li, Shujuan Li, Yan Liang, Lie Yin, Xincheng 2072-666X MDPI AG Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering http://dx.doi.org/10.3390/mi11010102 <jats:p>In this paper, theoretical models of the critical indentation depth and critical force on brittle materials using cleavage strength and contact theory are proposed. A Berkovich indenter is adopted for nanoindentation tests on a 4H-SiC single crystal sample to evaluate its mechanical behaviors. The stages of brittle material deformation (elastic, plastic, and brittle) can be characterized by the load versus indentation depth curves through the nanoindentation test. The curve of the elastic deformation stage follows the Hertz contact theory, and plastic deformation occurs at an indentation depth of up to 10 nm. The mechanism of 4H-SiC single crystal cracking is discussed, and the critical indentation depth and critical force for the plastic–brittle transition are obtained through the occurrence of the pop-in point. This shows that the theoretical results have good coherence with the test results. Both the values of the elastic modulus and hardness decrease as the crack length increases. In order to obtain more accurate mechanical property values in the nanoindentation test for brittle materials such as SiC, GaN, and sapphire, an appropriate load that avoids surface cracks should be adopted.</jats:p> Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale Micromachines |
| spellingShingle | Chai, Peng, Li, Shujuan, Li, Yan, Liang, Lie, Yin, Xincheng, Micromachines, Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale, Electrical and Electronic Engineering, Mechanical Engineering, Control and Systems Engineering |
| title | Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_full | Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_fullStr | Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_full_unstemmed | Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_short | Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| title_sort | mechanical behavior investigation of 4h-sic single crystal at the micro–nano scale |
| title_unstemmed | Mechanical Behavior Investigation of 4H-SiC Single Crystal at the Micro–Nano Scale |
| topic | Electrical and Electronic Engineering, Mechanical Engineering, Control and Systems Engineering |
| url | http://dx.doi.org/10.3390/mi11010102 |