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A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer
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| Zeitschriftentitel: | Micromachines |
|---|---|
| Personen und Körperschaften: | , , , , , |
| In: | Micromachines, 10, 2019, 2, S. 91 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
MDPI AG
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| Schlagwörter: |
| author_facet |
Sun, Youlei Wang, Ying Tang, Jianxiang Wang, Wenju Huang, Yifei Kuang, Xiaofei Sun, Youlei Wang, Ying Tang, Jianxiang Wang, Wenju Huang, Yifei Kuang, Xiaofei |
|---|---|
| author |
Sun, Youlei Wang, Ying Tang, Jianxiang Wang, Wenju Huang, Yifei Kuang, Xiaofei |
| spellingShingle |
Sun, Youlei Wang, Ying Tang, Jianxiang Wang, Wenju Huang, Yifei Kuang, Xiaofei Micromachines A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering |
| author_sort |
sun, youlei |
| spelling |
Sun, Youlei Wang, Ying Tang, Jianxiang Wang, Wenju Huang, Yifei Kuang, Xiaofei 2072-666X MDPI AG Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering http://dx.doi.org/10.3390/mi10020091 <jats:p>In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.</jats:p> A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer Micromachines |
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10.3390/mi10020091 |
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Online Free |
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Technik Mathematik Physik |
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MDPI AG, 2019 |
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MDPI AG, 2019 |
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2019 |
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| title |
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_unstemmed |
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_full |
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_fullStr |
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_full_unstemmed |
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_short |
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_sort |
a breakdown enhanced algan/gan schottky barrier diode with the t-anode position deep into the bottom buffer layer |
| topic |
Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering |
| url |
http://dx.doi.org/10.3390/mi10020091 |
| publishDate |
2019 |
| physical |
91 |
| description |
<jats:p>In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.</jats:p> |
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| author | Sun, Youlei, Wang, Ying, Tang, Jianxiang, Wang, Wenju, Huang, Yifei, Kuang, Xiaofei |
| author_facet | Sun, Youlei, Wang, Ying, Tang, Jianxiang, Wang, Wenju, Huang, Yifei, Kuang, Xiaofei, Sun, Youlei, Wang, Ying, Tang, Jianxiang, Wang, Wenju, Huang, Yifei, Kuang, Xiaofei |
| author_sort | sun, youlei |
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| container_start_page | 0 |
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| description | <jats:p>In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.</jats:p> |
| doi_str_mv | 10.3390/mi10020091 |
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| imprint_str_mv | MDPI AG, 2019 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-Zwi2, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| mega_collection | MDPI AG (CrossRef) |
| physical | 91 |
| publishDate | 2019 |
| publishDateSort | 2019 |
| publisher | MDPI AG |
| record_format | ai |
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| series | Micromachines |
| source_id | 49 |
| spelling | Sun, Youlei Wang, Ying Tang, Jianxiang Wang, Wenju Huang, Yifei Kuang, Xiaofei 2072-666X MDPI AG Electrical and Electronic Engineering Mechanical Engineering Control and Systems Engineering http://dx.doi.org/10.3390/mi10020091 <jats:p>In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.</jats:p> A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer Micromachines |
| spellingShingle | Sun, Youlei, Wang, Ying, Tang, Jianxiang, Wang, Wenju, Huang, Yifei, Kuang, Xiaofei, Micromachines, A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer, Electrical and Electronic Engineering, Mechanical Engineering, Control and Systems Engineering |
| title | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_full | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_fullStr | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_full_unstemmed | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_short | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| title_sort | a breakdown enhanced algan/gan schottky barrier diode with the t-anode position deep into the bottom buffer layer |
| title_unstemmed | A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer |
| topic | Electrical and Electronic Engineering, Mechanical Engineering, Control and Systems Engineering |
| url | http://dx.doi.org/10.3390/mi10020091 |