Eintrag weiter verarbeiten
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks
Gespeichert in:
| Zeitschriftentitel: | Materials |
|---|---|
| Personen und Körperschaften: | , , , , , |
| In: | Materials, 12, 2019, 15, S. 2353 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
MDPI AG
|
| Schlagwörter: |
| author_facet |
Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. |
|---|---|
| author |
Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. |
| spellingShingle |
Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. Materials Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks General Materials Science |
| author_sort |
schuh, philipp |
| spelling |
Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. 1996-1944 MDPI AG General Materials Science http://dx.doi.org/10.3390/ma12152353 <jats:p>The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).</jats:p> Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks Materials |
| doi_str_mv |
10.3390/ma12152353 |
| facet_avail |
Online Free |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMzM5MC9tYTEyMTUyMzUz |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMzM5MC9tYTEyMTUyMzUz |
| institution |
DE-Brt1 DE-Zwi2 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 |
| imprint |
MDPI AG, 2019 |
| imprint_str_mv |
MDPI AG, 2019 |
| issn |
1996-1944 |
| issn_str_mv |
1996-1944 |
| language |
English |
| mega_collection |
MDPI AG (CrossRef) |
| match_str |
schuh2019limitationsduringvaporphasegrowthofbulk1003csicusing3csiconsicseedingstacks |
| publishDateSort |
2019 |
| publisher |
MDPI AG |
| recordtype |
ai |
| record_format |
ai |
| series |
Materials |
| source_id |
49 |
| title |
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_unstemmed |
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_full |
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_fullStr |
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_full_unstemmed |
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_short |
Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_sort |
limitations during vapor phase growth of bulk (100) 3c-sic using 3c-sic-on-sic seeding stacks |
| topic |
General Materials Science |
| url |
http://dx.doi.org/10.3390/ma12152353 |
| publishDate |
2019 |
| physical |
2353 |
| description |
<jats:p>The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).</jats:p> |
| container_issue |
15 |
| container_start_page |
0 |
| container_title |
Materials |
| container_volume |
12 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792341174494691330 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T16:15:43.707Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Limitations+during+Vapor+Phase+Growth+of+Bulk+%28100%29+3C-SiC+Using+3C-SiC-on-SiC+Seeding+Stacks&rft.date=2019-07-24&genre=article&issn=1996-1944&volume=12&issue=15&pages=2353&jtitle=Materials&atitle=Limitations+during+Vapor+Phase+Growth+of+Bulk+%28100%29+3C-SiC+Using+3C-SiC-on-SiC+Seeding+Stacks&aulast=Wellmann&aufirst=Peter+J.&rft_id=info%3Adoi%2F10.3390%2Fma12152353&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792341174494691330 |
| author | Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J. |
| author_facet | Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J., Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J. |
| author_sort | schuh, philipp |
| container_issue | 15 |
| container_start_page | 0 |
| container_title | Materials |
| container_volume | 12 |
| description | <jats:p>The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).</jats:p> |
| doi_str_mv | 10.3390/ma12152353 |
| facet_avail | Online, Free |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMzM5MC9tYTEyMTUyMzUz |
| imprint | MDPI AG, 2019 |
| imprint_str_mv | MDPI AG, 2019 |
| institution | DE-Brt1, DE-Zwi2, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3 |
| issn | 1996-1944 |
| issn_str_mv | 1996-1944 |
| language | English |
| last_indexed | 2024-03-01T16:15:43.707Z |
| match_str | schuh2019limitationsduringvaporphasegrowthofbulk1003csicusing3csiconsicseedingstacks |
| mega_collection | MDPI AG (CrossRef) |
| physical | 2353 |
| publishDate | 2019 |
| publishDateSort | 2019 |
| publisher | MDPI AG |
| record_format | ai |
| recordtype | ai |
| series | Materials |
| source_id | 49 |
| spelling | Schuh, Philipp Steiner, Johannes La Via, Francesco Mauceri, Marco Zielinski, Marcin Wellmann, Peter J. 1996-1944 MDPI AG General Materials Science http://dx.doi.org/10.3390/ma12152353 <jats:p>The growth of 3C-SiC shows technological challenges, such as high supersaturation, a silicon-rich gas phase and a high vertical temperature gradient. We have developed a transfer method creating high-quality 3C-SiC-on-SiC (100) seeding stacks, suitable for use in sublimation “sandwich” epitaxy (SE). This work presents simulation data on the change of supersaturation and the temperature gradient between source and seed for the bulk growth. A series of growth runs on increased source to seed distances was characterized by XRD and Raman spectroscopy. Results show a decrease in quality in terms of single-crystallinity with a decrease in supersaturation. Morphology analysis of as-grown material indicates an increasing protrusion dimension with increasing thickness. This effect limits the achievable maximal thickness. Additional polytype inclusions were observed, which began to occur with low supersaturation (S ≤ 0.06) and prolonged growth (increase of carbon gas-species).</jats:p> Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks Materials |
| spellingShingle | Schuh, Philipp, Steiner, Johannes, La Via, Francesco, Mauceri, Marco, Zielinski, Marcin, Wellmann, Peter J., Materials, Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks, General Materials Science |
| title | Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_full | Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_fullStr | Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_full_unstemmed | Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_short | Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| title_sort | limitations during vapor phase growth of bulk (100) 3c-sic using 3c-sic-on-sic seeding stacks |
| title_unstemmed | Limitations during Vapor Phase Growth of Bulk (100) 3C-SiC Using 3C-SiC-on-SiC Seeding Stacks |
| topic | General Materials Science |
| url | http://dx.doi.org/10.3390/ma12152353 |