Eintrag weiter verarbeiten
| author_facet |
Wang, Hang Wang, Ying Gong, Shuyan Zhou, Xinyuan Yang, Zaixing Yang, Jun Han, Ning Chen, Yunfa Wang, Hang Wang, Ying Gong, Shuyan Zhou, Xinyuan Yang, Zaixing Yang, Jun Han, Ning Chen, Yunfa |
|---|---|
| author |
Wang, Hang Wang, Ying Gong, Shuyan Zhou, Xinyuan Yang, Zaixing Yang, Jun Han, Ning Chen, Yunfa |
| spellingShingle |
Wang, Hang Wang, Ying Gong, Shuyan Zhou, Xinyuan Yang, Zaixing Yang, Jun Han, Ning Chen, Yunfa Crystals Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram Inorganic Chemistry Condensed Matter Physics General Materials Science General Chemical Engineering |
| author_sort |
wang, hang |
| spelling |
Wang, Hang Wang, Ying Gong, Shuyan Zhou, Xinyuan Yang, Zaixing Yang, Jun Han, Ning Chen, Yunfa 2073-4352 MDPI AG Inorganic Chemistry Condensed Matter Physics General Materials Science General Chemical Engineering http://dx.doi.org/10.3390/cryst9030155 <jats:p>Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.</jats:p> Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram Crystals |
| doi_str_mv |
10.3390/cryst9030155 |
| facet_avail |
Online Free |
| finc_class_facet |
Chemie und Pharmazie Physik |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMzM5MC9jcnlzdDkwMzAxNTU |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMzM5MC9jcnlzdDkwMzAxNTU |
| institution |
DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-Zwi2 DE-D161 |
| imprint |
MDPI AG, 2019 |
| imprint_str_mv |
MDPI AG, 2019 |
| issn |
2073-4352 |
| issn_str_mv |
2073-4352 |
| language |
English |
| mega_collection |
MDPI AG (CrossRef) |
| match_str |
wang2019growthofga2o3nanowiresviacuasgaternaryphasediagram |
| publishDateSort |
2019 |
| publisher |
MDPI AG |
| recordtype |
ai |
| record_format |
ai |
| series |
Crystals |
| source_id |
49 |
| title |
Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_unstemmed |
Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_full |
Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_fullStr |
Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_full_unstemmed |
Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_short |
Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_sort |
growth of ga2o3 nanowires via cu-as-ga ternary phase diagram |
| topic |
Inorganic Chemistry Condensed Matter Physics General Materials Science General Chemical Engineering |
| url |
http://dx.doi.org/10.3390/cryst9030155 |
| publishDate |
2019 |
| physical |
155 |
| description |
<jats:p>Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.</jats:p> |
| container_issue |
3 |
| container_start_page |
0 |
| container_title |
Crystals |
| container_volume |
9 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792331296480952320 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T13:38:42.838Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Growth+of+Ga2O3+Nanowires+via+Cu-As-Ga+Ternary+Phase+Diagram&rft.date=2019-03-15&genre=article&issn=2073-4352&volume=9&issue=3&pages=155&jtitle=Crystals&atitle=Growth+of+Ga2O3+Nanowires+via+Cu-As-Ga+Ternary+Phase+Diagram&aulast=Chen&aufirst=Yunfa&rft_id=info%3Adoi%2F10.3390%2Fcryst9030155&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792331296480952320 |
| author | Wang, Hang, Wang, Ying, Gong, Shuyan, Zhou, Xinyuan, Yang, Zaixing, Yang, Jun, Han, Ning, Chen, Yunfa |
| author_facet | Wang, Hang, Wang, Ying, Gong, Shuyan, Zhou, Xinyuan, Yang, Zaixing, Yang, Jun, Han, Ning, Chen, Yunfa, Wang, Hang, Wang, Ying, Gong, Shuyan, Zhou, Xinyuan, Yang, Zaixing, Yang, Jun, Han, Ning, Chen, Yunfa |
| author_sort | wang, hang |
| container_issue | 3 |
| container_start_page | 0 |
| container_title | Crystals |
| container_volume | 9 |
| description | <jats:p>Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.</jats:p> |
| doi_str_mv | 10.3390/cryst9030155 |
| facet_avail | Online, Free |
| finc_class_facet | Chemie und Pharmazie, Physik |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMzM5MC9jcnlzdDkwMzAxNTU |
| imprint | MDPI AG, 2019 |
| imprint_str_mv | MDPI AG, 2019 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-Zwi2, DE-D161 |
| issn | 2073-4352 |
| issn_str_mv | 2073-4352 |
| language | English |
| last_indexed | 2024-03-01T13:38:42.838Z |
| match_str | wang2019growthofga2o3nanowiresviacuasgaternaryphasediagram |
| mega_collection | MDPI AG (CrossRef) |
| physical | 155 |
| publishDate | 2019 |
| publishDateSort | 2019 |
| publisher | MDPI AG |
| record_format | ai |
| recordtype | ai |
| series | Crystals |
| source_id | 49 |
| spelling | Wang, Hang Wang, Ying Gong, Shuyan Zhou, Xinyuan Yang, Zaixing Yang, Jun Han, Ning Chen, Yunfa 2073-4352 MDPI AG Inorganic Chemistry Condensed Matter Physics General Materials Science General Chemical Engineering http://dx.doi.org/10.3390/cryst9030155 <jats:p>Currently, it is challenging to develop new catalysts for semiconductor nanowires (NWs) growth in a complementary-metal-oxide-semiconductor (CMOS) compatible manner via a vapor-liquid-solid (VLS) mechanism. In this study, chemically synthesized Cu2O nano cubes are adopted as the catalyst for single crystalline β-Ga2O3 NWs growth in chemical vapor deposition. The growth temperature is optimized to be 750 to 800 °C. The NW diameter is controlled by tuning the sizes of Cu2O cubes in the 20 to 100 nm range with a bandgap of ~4.85 eV as measured by ultraviolet-visible absorption spectroscopy. More importantly, the catalyst tip is found to be Cu5As2, which is distinguished from those Au-catalyzed Au-Ga alloys. After a comprehensive phase diagram investigation, the β-Ga2O3 NWs are proposed to be grown by the ternary phase of Cu-As-Ga diffusing Ga into the growth frontier of the NW, where Ga react with residual oxygen to form the NWs. Afterward, Ga diminishes after growth since Ga would be the smallest component in the ternary alloy. All these results show the importance of the catalyst choice for CMOS compatible NW growth and also the potency of the ternary phase catalyst growth mode in other semiconductor NWs synthesis.</jats:p> Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram Crystals |
| spellingShingle | Wang, Hang, Wang, Ying, Gong, Shuyan, Zhou, Xinyuan, Yang, Zaixing, Yang, Jun, Han, Ning, Chen, Yunfa, Crystals, Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram, Inorganic Chemistry, Condensed Matter Physics, General Materials Science, General Chemical Engineering |
| title | Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_full | Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_fullStr | Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_full_unstemmed | Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_short | Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| title_sort | growth of ga2o3 nanowires via cu-as-ga ternary phase diagram |
| title_unstemmed | Growth of Ga2O3 Nanowires via Cu-As-Ga Ternary Phase Diagram |
| topic | Inorganic Chemistry, Condensed Matter Physics, General Materials Science, General Chemical Engineering |
| url | http://dx.doi.org/10.3390/cryst9030155 |