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Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies
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| Zeitschriftentitel: | Semiconductors |
|---|---|
| Personen und Körperschaften: | , , |
| In: | Semiconductors, 52, 2018, 4, S. 420-430 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Pleiades Publishing Ltd
|
| Schlagwörter: |
| author_facet |
Reddy, Baikadi Pranay Kumar Teja, Karri Babu Ravi Kandpal, Kavindra Reddy, Baikadi Pranay Kumar Teja, Karri Babu Ravi Kandpal, Kavindra |
|---|---|
| author |
Reddy, Baikadi Pranay Kumar Teja, Karri Babu Ravi Kandpal, Kavindra |
| spellingShingle |
Reddy, Baikadi Pranay Kumar Teja, Karri Babu Ravi Kandpal, Kavindra Semiconductors Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
| author_sort |
reddy, baikadi pranay kumar |
| spelling |
Reddy, Baikadi Pranay Kumar Teja, Karri Babu Ravi Kandpal, Kavindra 1063-7826 1090-6479 Pleiades Publishing Ltd Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1134/s1063782618040073 Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies Semiconductors |
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| title |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_unstemmed |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_full |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_fullStr |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_full_unstemmed |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_short |
Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_sort |
investigation on high-κ dielectric for low leakage algan/gan mis-hemt device, using material selection methodologies |
| topic |
Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
| url |
http://dx.doi.org/10.1134/s1063782618040073 |
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2018 |
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420-430 |
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| author | Reddy, Baikadi Pranay Kumar, Teja, Karri Babu Ravi, Kandpal, Kavindra |
| author_facet | Reddy, Baikadi Pranay Kumar, Teja, Karri Babu Ravi, Kandpal, Kavindra, Reddy, Baikadi Pranay Kumar, Teja, Karri Babu Ravi, Kandpal, Kavindra |
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| container_start_page | 420 |
| container_title | Semiconductors |
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| description | |
| doi_str_mv | 10.1134/s1063782618040073 |
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| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEzNC9zMTA2Mzc4MjYxODA0MDA3Mw |
| imprint | Pleiades Publishing Ltd, 2018 |
| imprint_str_mv | Pleiades Publishing Ltd, 2018 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
| issn | 1063-7826, 1090-6479 |
| issn_str_mv | 1063-7826, 1090-6479 |
| language | English |
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| physical | 420-430 |
| publishDate | 2018 |
| publishDateSort | 2018 |
| publisher | Pleiades Publishing Ltd |
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| recordtype | ai |
| series | Semiconductors |
| source_id | 49 |
| spelling | Reddy, Baikadi Pranay Kumar Teja, Karri Babu Ravi Kandpal, Kavindra 1063-7826 1090-6479 Pleiades Publishing Ltd Condensed Matter Physics Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1134/s1063782618040073 Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies Semiconductors |
| spellingShingle | Reddy, Baikadi Pranay Kumar, Teja, Karri Babu Ravi, Kandpal, Kavindra, Semiconductors, Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
| title | Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_full | Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_fullStr | Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_full_unstemmed | Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_short | Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| title_sort | investigation on high-κ dielectric for low leakage algan/gan mis-hemt device, using material selection methodologies |
| title_unstemmed | Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies |
| topic | Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
| url | http://dx.doi.org/10.1134/s1063782618040073 |