Eintrag weiter verarbeiten
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition
Gespeichert in:
| Zeitschriftentitel: | Journal of the American Ceramic Society |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , |
| In: | Journal of the American Ceramic Society, 96, 2013, 8, S. 2419-2423 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
|
| Schlagwörter: |
| author_facet |
Tsai, Mu‐Gong Tung, Hsien‐Tse Chen, In‐Gann Chen, Chia‐Chuan Wu, Yun‐Fang Qi, Xiaoding Hwu, Yeukuang Lin, Cen‐Ying Wu, Ping‐Han Cheng, Chung‐Wei Tsai, Mu‐Gong Tung, Hsien‐Tse Chen, In‐Gann Chen, Chia‐Chuan Wu, Yun‐Fang Qi, Xiaoding Hwu, Yeukuang Lin, Cen‐Ying Wu, Ping‐Han Cheng, Chung‐Wei |
|---|---|
| author |
Tsai, Mu‐Gong Tung, Hsien‐Tse Chen, In‐Gann Chen, Chia‐Chuan Wu, Yun‐Fang Qi, Xiaoding Hwu, Yeukuang Lin, Cen‐Ying Wu, Ping‐Han Cheng, Chung‐Wei |
| spellingShingle |
Tsai, Mu‐Gong Tung, Hsien‐Tse Chen, In‐Gann Chen, Chia‐Chuan Wu, Yun‐Fang Qi, Xiaoding Hwu, Yeukuang Lin, Cen‐Ying Wu, Ping‐Han Cheng, Chung‐Wei Journal of the American Ceramic Society Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition Materials Chemistry Ceramics and Composites |
| author_sort |
tsai, mu‐gong |
| spelling |
Tsai, Mu‐Gong Tung, Hsien‐Tse Chen, In‐Gann Chen, Chia‐Chuan Wu, Yun‐Fang Qi, Xiaoding Hwu, Yeukuang Lin, Cen‐Ying Wu, Ping‐Han Cheng, Chung‐Wei 0002-7820 1551-2916 Wiley Materials Chemistry Ceramics and Composites http://dx.doi.org/10.1111/jace.12422 <jats:p>This work reports the crystallization, microstructure, and surface composition of <jats:styled-content style="fixed-case"><jats:roman>Cu</jats:roman><jats:roman>In</jats:roman></jats:styled-content><jats:sub>0.7</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Ga</jats:roman></jats:styled-content><jats:sub>0.3</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Se</jats:roman></jats:styled-content><jats:sub>2</jats:sub> (<jats:styled-content style="fixed-case">CIGS</jats:styled-content>) thin films grown by femtosecond pulsed laser deposition at different annealing temperatures. The structural and optical properties of the <jats:styled-content style="fixed-case">CIGS</jats:styled-content> films were characterized by X‐ray diffraction, Raman scattering, <jats:styled-content style="fixed-case">UV</jats:styled-content>‐visible spectroscopy, and Hall effect measurement. The results indicate that binary crystals of <jats:styled-content style="fixed-case"><jats:roman>CuS</jats:roman></jats:styled-content>e initially formed on the as‐deposited film, but then completely turned into a quaternary chalcopyrite structure after annealing at 400°C. Phase transformation significantly affects the surface morphology, Hall properties, and band gap. Transmission electron microscopy further revealed that an interface between the <jats:styled-content style="fixed-case"><jats:roman>Mo</jats:roman></jats:styled-content> substrate and <jats:styled-content style="fixed-case">CIGS</jats:styled-content> crystallites contains an amorphous layer even at the high temperature of 500°C. For the application of photovoltaic devices, we also report on the photoresponse of both as‐deposited and annealed films as demonstrated by preliminary tests.</jats:p> Annealing Effect on the Properties of <scp><scp>Cu</scp></scp>(<scp><scp>In</scp></scp><sub>0.7</sub><scp><scp>Ga</scp></scp><sub>0.3</sub>)<scp><scp>Se</scp></scp><sub>2</sub> Thin Films Grown by Femtosecond Pulsed Laser Deposition Journal of the American Ceramic Society |
| doi_str_mv |
10.1111/jace.12422 |
| facet_avail |
Online |
| finc_class_facet |
Technik Chemie und Pharmazie |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTExMS9qYWNlLjEyNDIy |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTExMS9qYWNlLjEyNDIy |
| institution |
DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Rs1 DE-Pl11 DE-105 DE-14 |
| imprint |
Wiley, 2013 |
| imprint_str_mv |
Wiley, 2013 |
| issn |
0002-7820 1551-2916 |
| issn_str_mv |
0002-7820 1551-2916 |
| language |
English |
| mega_collection |
Wiley (CrossRef) |
| match_str |
tsai2013annealingeffectonthepropertiesofcuin07ga03se2thinfilmsgrownbyfemtosecondpulsedlaserdeposition |
| publishDateSort |
2013 |
| publisher |
Wiley |
| recordtype |
ai |
| record_format |
ai |
| series |
Journal of the American Ceramic Society |
| source_id |
49 |
| title |
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_unstemmed |
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_full |
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_fullStr |
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_full_unstemmed |
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_short |
Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_sort |
annealing effect on the properties of <scp><scp>cu</scp></scp>(<scp><scp>in</scp></scp><sub>0.7</sub><scp><scp>ga</scp></scp><sub>0.3</sub>)<scp><scp>se</scp></scp><sub>2</sub> thin films grown by femtosecond pulsed laser deposition |
| topic |
Materials Chemistry Ceramics and Composites |
| url |
http://dx.doi.org/10.1111/jace.12422 |
| publishDate |
2013 |
| physical |
2419-2423 |
| description |
<jats:p>This work reports the crystallization, microstructure, and surface composition of <jats:styled-content style="fixed-case"><jats:roman>Cu</jats:roman><jats:roman>In</jats:roman></jats:styled-content><jats:sub>0.7</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Ga</jats:roman></jats:styled-content><jats:sub>0.3</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Se</jats:roman></jats:styled-content><jats:sub>2</jats:sub> (<jats:styled-content style="fixed-case">CIGS</jats:styled-content>) thin films grown by femtosecond pulsed laser deposition at different annealing temperatures. The structural and optical properties of the <jats:styled-content style="fixed-case">CIGS</jats:styled-content> films were characterized by X‐ray diffraction, Raman scattering, <jats:styled-content style="fixed-case">UV</jats:styled-content>‐visible spectroscopy, and Hall effect measurement. The results indicate that binary crystals of <jats:styled-content style="fixed-case"><jats:roman>CuS</jats:roman></jats:styled-content>e initially formed on the as‐deposited film, but then completely turned into a quaternary chalcopyrite structure after annealing at 400°C. Phase transformation significantly affects the surface morphology, Hall properties, and band gap. Transmission electron microscopy further revealed that an interface between the <jats:styled-content style="fixed-case"><jats:roman>Mo</jats:roman></jats:styled-content> substrate and <jats:styled-content style="fixed-case">CIGS</jats:styled-content> crystallites contains an amorphous layer even at the high temperature of 500°C. For the application of photovoltaic devices, we also report on the photoresponse of both as‐deposited and annealed films as demonstrated by preliminary tests.</jats:p> |
| container_issue |
8 |
| container_start_page |
2419 |
| container_title |
Journal of the American Ceramic Society |
| container_volume |
96 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792335047985987584 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T14:38:21.539Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Annealing+Effect+on+the+Properties+of+Cu%28In0.7Ga0.3%29Se2+Thin+Films+Grown+by+Femtosecond+Pulsed+Laser+Deposition&rft.date=2013-08-01&genre=article&issn=1551-2916&volume=96&issue=8&spage=2419&epage=2423&pages=2419-2423&jtitle=Journal+of+the+American+Ceramic+Society&atitle=Annealing+Effect+on+the+Properties+of+%3Cscp%3E%3Cscp%3ECu%3C%2Fscp%3E%3C%2Fscp%3E%28%3Cscp%3E%3Cscp%3EIn%3C%2Fscp%3E%3C%2Fscp%3E%3Csub%3E0.7%3C%2Fsub%3E%3Cscp%3E%3Cscp%3EGa%3C%2Fscp%3E%3C%2Fscp%3E%3Csub%3E0.3%3C%2Fsub%3E%29%3Cscp%3E%3Cscp%3ESe%3C%2Fscp%3E%3C%2Fscp%3E%3Csub%3E2%3C%2Fsub%3E+Thin+Films+Grown+by+Femtosecond+Pulsed+Laser+Deposition&aulast=Cheng&aufirst=Chung%E2%80%90Wei&rft_id=info%3Adoi%2F10.1111%2Fjace.12422&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792335047985987584 |
| author | Tsai, Mu‐Gong, Tung, Hsien‐Tse, Chen, In‐Gann, Chen, Chia‐Chuan, Wu, Yun‐Fang, Qi, Xiaoding, Hwu, Yeukuang, Lin, Cen‐Ying, Wu, Ping‐Han, Cheng, Chung‐Wei |
| author_facet | Tsai, Mu‐Gong, Tung, Hsien‐Tse, Chen, In‐Gann, Chen, Chia‐Chuan, Wu, Yun‐Fang, Qi, Xiaoding, Hwu, Yeukuang, Lin, Cen‐Ying, Wu, Ping‐Han, Cheng, Chung‐Wei, Tsai, Mu‐Gong, Tung, Hsien‐Tse, Chen, In‐Gann, Chen, Chia‐Chuan, Wu, Yun‐Fang, Qi, Xiaoding, Hwu, Yeukuang, Lin, Cen‐Ying, Wu, Ping‐Han, Cheng, Chung‐Wei |
| author_sort | tsai, mu‐gong |
| container_issue | 8 |
| container_start_page | 2419 |
| container_title | Journal of the American Ceramic Society |
| container_volume | 96 |
| description | <jats:p>This work reports the crystallization, microstructure, and surface composition of <jats:styled-content style="fixed-case"><jats:roman>Cu</jats:roman><jats:roman>In</jats:roman></jats:styled-content><jats:sub>0.7</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Ga</jats:roman></jats:styled-content><jats:sub>0.3</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Se</jats:roman></jats:styled-content><jats:sub>2</jats:sub> (<jats:styled-content style="fixed-case">CIGS</jats:styled-content>) thin films grown by femtosecond pulsed laser deposition at different annealing temperatures. The structural and optical properties of the <jats:styled-content style="fixed-case">CIGS</jats:styled-content> films were characterized by X‐ray diffraction, Raman scattering, <jats:styled-content style="fixed-case">UV</jats:styled-content>‐visible spectroscopy, and Hall effect measurement. The results indicate that binary crystals of <jats:styled-content style="fixed-case"><jats:roman>CuS</jats:roman></jats:styled-content>e initially formed on the as‐deposited film, but then completely turned into a quaternary chalcopyrite structure after annealing at 400°C. Phase transformation significantly affects the surface morphology, Hall properties, and band gap. Transmission electron microscopy further revealed that an interface between the <jats:styled-content style="fixed-case"><jats:roman>Mo</jats:roman></jats:styled-content> substrate and <jats:styled-content style="fixed-case">CIGS</jats:styled-content> crystallites contains an amorphous layer even at the high temperature of 500°C. For the application of photovoltaic devices, we also report on the photoresponse of both as‐deposited and annealed films as demonstrated by preliminary tests.</jats:p> |
| doi_str_mv | 10.1111/jace.12422 |
| facet_avail | Online |
| finc_class_facet | Technik, Chemie und Pharmazie |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTExMS9qYWNlLjEyNDIy |
| imprint | Wiley, 2013 |
| imprint_str_mv | Wiley, 2013 |
| institution | DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Rs1, DE-Pl11, DE-105, DE-14 |
| issn | 0002-7820, 1551-2916 |
| issn_str_mv | 0002-7820, 1551-2916 |
| language | English |
| last_indexed | 2024-03-01T14:38:21.539Z |
| match_str | tsai2013annealingeffectonthepropertiesofcuin07ga03se2thinfilmsgrownbyfemtosecondpulsedlaserdeposition |
| mega_collection | Wiley (CrossRef) |
| physical | 2419-2423 |
| publishDate | 2013 |
| publishDateSort | 2013 |
| publisher | Wiley |
| record_format | ai |
| recordtype | ai |
| series | Journal of the American Ceramic Society |
| source_id | 49 |
| spelling | Tsai, Mu‐Gong Tung, Hsien‐Tse Chen, In‐Gann Chen, Chia‐Chuan Wu, Yun‐Fang Qi, Xiaoding Hwu, Yeukuang Lin, Cen‐Ying Wu, Ping‐Han Cheng, Chung‐Wei 0002-7820 1551-2916 Wiley Materials Chemistry Ceramics and Composites http://dx.doi.org/10.1111/jace.12422 <jats:p>This work reports the crystallization, microstructure, and surface composition of <jats:styled-content style="fixed-case"><jats:roman>Cu</jats:roman><jats:roman>In</jats:roman></jats:styled-content><jats:sub>0.7</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Ga</jats:roman></jats:styled-content><jats:sub>0.3</jats:sub><jats:styled-content style="fixed-case"><jats:roman>Se</jats:roman></jats:styled-content><jats:sub>2</jats:sub> (<jats:styled-content style="fixed-case">CIGS</jats:styled-content>) thin films grown by femtosecond pulsed laser deposition at different annealing temperatures. The structural and optical properties of the <jats:styled-content style="fixed-case">CIGS</jats:styled-content> films were characterized by X‐ray diffraction, Raman scattering, <jats:styled-content style="fixed-case">UV</jats:styled-content>‐visible spectroscopy, and Hall effect measurement. The results indicate that binary crystals of <jats:styled-content style="fixed-case"><jats:roman>CuS</jats:roman></jats:styled-content>e initially formed on the as‐deposited film, but then completely turned into a quaternary chalcopyrite structure after annealing at 400°C. Phase transformation significantly affects the surface morphology, Hall properties, and band gap. Transmission electron microscopy further revealed that an interface between the <jats:styled-content style="fixed-case"><jats:roman>Mo</jats:roman></jats:styled-content> substrate and <jats:styled-content style="fixed-case">CIGS</jats:styled-content> crystallites contains an amorphous layer even at the high temperature of 500°C. For the application of photovoltaic devices, we also report on the photoresponse of both as‐deposited and annealed films as demonstrated by preliminary tests.</jats:p> Annealing Effect on the Properties of <scp><scp>Cu</scp></scp>(<scp><scp>In</scp></scp><sub>0.7</sub><scp><scp>Ga</scp></scp><sub>0.3</sub>)<scp><scp>Se</scp></scp><sub>2</sub> Thin Films Grown by Femtosecond Pulsed Laser Deposition Journal of the American Ceramic Society |
| spellingShingle | Tsai, Mu‐Gong, Tung, Hsien‐Tse, Chen, In‐Gann, Chen, Chia‐Chuan, Wu, Yun‐Fang, Qi, Xiaoding, Hwu, Yeukuang, Lin, Cen‐Ying, Wu, Ping‐Han, Cheng, Chung‐Wei, Journal of the American Ceramic Society, Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition, Materials Chemistry, Ceramics and Composites |
| title | Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_full | Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_fullStr | Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_full_unstemmed | Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_short | Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| title_sort | annealing effect on the properties of <scp><scp>cu</scp></scp>(<scp><scp>in</scp></scp><sub>0.7</sub><scp><scp>ga</scp></scp><sub>0.3</sub>)<scp><scp>se</scp></scp><sub>2</sub> thin films grown by femtosecond pulsed laser deposition |
| title_unstemmed | Annealing Effect on the Properties of Cu(In0.7Ga0.3)Se2 Thin Films Grown by Femtosecond Pulsed Laser Deposition |
| topic | Materials Chemistry, Ceramics and Composites |
| url | http://dx.doi.org/10.1111/jace.12422 |