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Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals
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| Zeitschriftentitel: | IEEE Transactions on Nuclear Science |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , |
| In: | IEEE Transactions on Nuclear Science, 2012, S. 1-1 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
Institute of Electrical and Electronics Engineers (IEEE)
|
| Schlagwörter: |
| author_facet |
Kamada, Kei Yanagida, Takayuki Pejchal, Jan Nikl, Martin Endo, Takanori Tsutumi, Kousuke Usuki, Yoshiyuki Fujimoto, Yutaka Fukabori, Akihiro Yoshikawa, Akira Kamada, Kei Yanagida, Takayuki Pejchal, Jan Nikl, Martin Endo, Takanori Tsutumi, Kousuke Usuki, Yoshiyuki Fujimoto, Yutaka Fukabori, Akihiro Yoshikawa, Akira |
|---|---|
| author |
Kamada, Kei Yanagida, Takayuki Pejchal, Jan Nikl, Martin Endo, Takanori Tsutumi, Kousuke Usuki, Yoshiyuki Fujimoto, Yutaka Fukabori, Akihiro Yoshikawa, Akira |
| spellingShingle |
Kamada, Kei Yanagida, Takayuki Pejchal, Jan Nikl, Martin Endo, Takanori Tsutumi, Kousuke Usuki, Yoshiyuki Fujimoto, Yutaka Fukabori, Akihiro Yoshikawa, Akira IEEE Transactions on Nuclear Science Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals Electrical and Electronic Engineering Nuclear Energy and Engineering Nuclear and High Energy Physics |
| author_sort |
kamada, kei |
| spelling |
Kamada, Kei Yanagida, Takayuki Pejchal, Jan Nikl, Martin Endo, Takanori Tsutumi, Kousuke Usuki, Yoshiyuki Fujimoto, Yutaka Fukabori, Akihiro Yoshikawa, Akira 0018-9499 1558-1578 Institute of Electrical and Electronics Engineers (IEEE) Electrical and Electronic Engineering Nuclear Energy and Engineering Nuclear and High Energy Physics http://dx.doi.org/10.1109/tns.2012.2191622 Growth and Scintillation Properties of Pr-Doped Gd<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>(Ga,Al)<formula formulatype="inline"><tex Notation="TeX">$_{5}$</tex></formula>O<formula formulatype="inline"> <tex Notation="TeX">$_{12}$</tex></formula> Single Crystals IEEE Transactions on Nuclear Science |
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Institute of Electrical and Electronics Engineers (IEEE), 2012 |
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Institute of Electrical and Electronics Engineers (IEEE), 2012 |
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0018-9499 1558-1578 |
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IEEE Transactions on Nuclear Science |
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| title |
Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_unstemmed |
Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_full |
Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_fullStr |
Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_full_unstemmed |
Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_short |
Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_sort |
growth and scintillation properties of pr-doped gd<formula formulatype="inline"><tex notation="tex">$_{3}$</tex></formula>(ga,al)<formula formulatype="inline"><tex notation="tex">$_{5}$</tex></formula>o<formula formulatype="inline"> <tex notation="tex">$_{12}$</tex></formula> single crystals |
| topic |
Electrical and Electronic Engineering Nuclear Energy and Engineering Nuclear and High Energy Physics |
| url |
http://dx.doi.org/10.1109/tns.2012.2191622 |
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2012 |
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1-1 |
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| author | Kamada, Kei, Yanagida, Takayuki, Pejchal, Jan, Nikl, Martin, Endo, Takanori, Tsutumi, Kousuke, Usuki, Yoshiyuki, Fujimoto, Yutaka, Fukabori, Akihiro, Yoshikawa, Akira |
| author_facet | Kamada, Kei, Yanagida, Takayuki, Pejchal, Jan, Nikl, Martin, Endo, Takanori, Tsutumi, Kousuke, Usuki, Yoshiyuki, Fujimoto, Yutaka, Fukabori, Akihiro, Yoshikawa, Akira, Kamada, Kei, Yanagida, Takayuki, Pejchal, Jan, Nikl, Martin, Endo, Takanori, Tsutumi, Kousuke, Usuki, Yoshiyuki, Fujimoto, Yutaka, Fukabori, Akihiro, Yoshikawa, Akira |
| author_sort | kamada, kei |
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| series | IEEE Transactions on Nuclear Science |
| source_id | 49 |
| spelling | Kamada, Kei Yanagida, Takayuki Pejchal, Jan Nikl, Martin Endo, Takanori Tsutumi, Kousuke Usuki, Yoshiyuki Fujimoto, Yutaka Fukabori, Akihiro Yoshikawa, Akira 0018-9499 1558-1578 Institute of Electrical and Electronics Engineers (IEEE) Electrical and Electronic Engineering Nuclear Energy and Engineering Nuclear and High Energy Physics http://dx.doi.org/10.1109/tns.2012.2191622 Growth and Scintillation Properties of Pr-Doped Gd<formula formulatype="inline"><tex Notation="TeX">$_{3}$</tex></formula>(Ga,Al)<formula formulatype="inline"><tex Notation="TeX">$_{5}$</tex></formula>O<formula formulatype="inline"> <tex Notation="TeX">$_{12}$</tex></formula> Single Crystals IEEE Transactions on Nuclear Science |
| spellingShingle | Kamada, Kei, Yanagida, Takayuki, Pejchal, Jan, Nikl, Martin, Endo, Takanori, Tsutumi, Kousuke, Usuki, Yoshiyuki, Fujimoto, Yutaka, Fukabori, Akihiro, Yoshikawa, Akira, IEEE Transactions on Nuclear Science, Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals, Electrical and Electronic Engineering, Nuclear Energy and Engineering, Nuclear and High Energy Physics |
| title | Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_full | Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_fullStr | Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_full_unstemmed | Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_short | Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| title_sort | growth and scintillation properties of pr-doped gd<formula formulatype="inline"><tex notation="tex">$_{3}$</tex></formula>(ga,al)<formula formulatype="inline"><tex notation="tex">$_{5}$</tex></formula>o<formula formulatype="inline"> <tex notation="tex">$_{12}$</tex></formula> single crystals |
| title_unstemmed | Growth and Scintillation Properties of Pr-Doped Gd$_{3}$(Ga,Al)$_{5}$O $_{12}$ Single Crystals |
| topic | Electrical and Electronic Engineering, Nuclear Energy and Engineering, Nuclear and High Energy Physics |
| url | http://dx.doi.org/10.1109/tns.2012.2191622 |