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A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION
Zapisane w:
Tytuł czasopisma: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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Personen und Körperschaften: | |
In: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 12, 1993, 4, S. 541-552 |
Format: | E-Article |
Język: | Englisch |
Wydane: |
Emerald
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Hasła przedmiotowe: |