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A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION
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| Zeitschriftentitel: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
|---|---|
| Personen und Körperschaften: | |
| In: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 12, 1993, 4, S. 541-552 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Emerald
|
| Schlagwörter: |
| author_facet |
Pan, Y. Pan, Y. |
|---|---|
| author |
Pan, Y. |
| spellingShingle |
Pan, Y. COMPEL - The international journal for computation and mathematics in electrical and electronic engineering A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications |
| author_sort |
pan, y. |
| spelling |
Pan, Y. 0332-1649 Emerald Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications http://dx.doi.org/10.1108/eb051827 A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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10.1108/eb051827 |
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Online |
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Technik Physik Informatik Mathematik |
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Emerald, 1993 |
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Emerald, 1993 |
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0332-1649 |
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0332-1649 |
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English |
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1993 |
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Emerald |
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COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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49 |
| title |
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_unstemmed |
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_full |
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_fullStr |
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_full_unstemmed |
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_short |
A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_sort |
a physical model for the hot‐carrier induced degradation of ldd‐pmos transistor and its experimental verification |
| topic |
Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications |
| url |
http://dx.doi.org/10.1108/eb051827 |
| publishDate |
1993 |
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541-552 |
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| container_start_page | 541 |
| container_title | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwOC9lYjA1MTgyNw |
| imprint | Emerald, 1993 |
| imprint_str_mv | Emerald, 1993 |
| institution | DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14 |
| issn | 0332-1649 |
| issn_str_mv | 0332-1649 |
| language | English |
| last_indexed | 2024-03-01T10:52:37.818Z |
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| physical | 541-552 |
| publishDate | 1993 |
| publishDateSort | 1993 |
| publisher | Emerald |
| record_format | ai |
| recordtype | ai |
| series | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
| source_id | 49 |
| spelling | Pan, Y. 0332-1649 Emerald Applied Mathematics Electrical and Electronic Engineering Computational Theory and Mathematics Computer Science Applications http://dx.doi.org/10.1108/eb051827 A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
| spellingShingle | Pan, Y., COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION, Applied Mathematics, Electrical and Electronic Engineering, Computational Theory and Mathematics, Computer Science Applications |
| title | A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_full | A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_fullStr | A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_full_unstemmed | A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_short | A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| title_sort | a physical model for the hot‐carrier induced degradation of ldd‐pmos transistor and its experimental verification |
| title_unstemmed | A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION |
| topic | Applied Mathematics, Electrical and Electronic Engineering, Computational Theory and Mathematics, Computer Science Applications |
| url | http://dx.doi.org/10.1108/eb051827 |