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A PHYSICAL MODEL FOR THE HOT‐CARRIER INDUCED DEGRADATION OF LDD‐PMOS TRANSISTOR AND ITS EXPERIMENTAL VERIFICATION
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Journal Title: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering |
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Authors and Corporations: | |
In: | COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 12, 1993, 4, p. 541-552 |
Type of Resource: | E-Article |
Language: | English |
published: |
Emerald
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Subjects: |