Eintrag weiter verarbeiten
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs
Gespeichert in:
| Zeitschriftentitel: | Journal of Applied Crystallography |
|---|---|
| Personen und Körperschaften: | , , , , , , , , |
| In: | Journal of Applied Crystallography, 53, 2020, 4, S. 885-895 |
| Format: | E-Article |
| Sprache: | Unbestimmt |
| veröffentlicht: |
International Union of Crystallography (IUCr)
|
| Schlagwörter: |
| author_facet |
Boureau, Victor Durand, Aurèle Gergaud, Patrice Le Cunff, Delphine Wormington, Matthew Rouchon, Denis Claverie, Alain Benoit, Daniel Hÿtch, Martin Boureau, Victor Durand, Aurèle Gergaud, Patrice Le Cunff, Delphine Wormington, Matthew Rouchon, Denis Claverie, Alain Benoit, Daniel Hÿtch, Martin |
|---|---|
| author |
Boureau, Victor Durand, Aurèle Gergaud, Patrice Le Cunff, Delphine Wormington, Matthew Rouchon, Denis Claverie, Alain Benoit, Daniel Hÿtch, Martin |
| spellingShingle |
Boureau, Victor Durand, Aurèle Gergaud, Patrice Le Cunff, Delphine Wormington, Matthew Rouchon, Denis Claverie, Alain Benoit, Daniel Hÿtch, Martin Journal of Applied Crystallography Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs General Biochemistry, Genetics and Molecular Biology |
| author_sort |
boureau, victor |
| spelling |
Boureau, Victor Durand, Aurèle Gergaud, Patrice Le Cunff, Delphine Wormington, Matthew Rouchon, Denis Claverie, Alain Benoit, Daniel Hÿtch, Martin 1600-5767 International Union of Crystallography (IUCr) General Biochemistry, Genetics and Molecular Biology http://dx.doi.org/10.1107/s1600576720006020 <jats:p>Diffraction-based techniques, with either electrons or photons, are commonly used in materials science to measure elastic strain in crystalline specimens. In this paper, the focus is on two advanced techniques capable of accessing strain information at the nanoscale: high-resolution X-ray diffraction (HRXRD) and the transmission electron microscopy technique of dark-field electron holography (DFEH). Both experimentally record an image formed by a diffracted beam: a map of the intensity in the vicinity of a Bragg reflection spot in the former, and an interference pattern in the latter. The theory that governs these experiments will be described in a unified framework. The role of the geometric phase, which encodes the displacement field of a set of atomic planes in the resulting diffracted beam, is emphasized. A detailed comparison of experimental results acquired at a synchrotron and with a state-of-the-art transmission electron microscope is presented for the same test structure: an array of dummy metal–oxide–semiconductor field-effect transistors (MOSFETs) from the 22 nm technology node. Both techniques give access to accurate strain information. Experiment, theory and modelling allow the illustration of the similarities and inherent differences between the HRXRD and DFEH techniques.</jats:p> Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs Journal of Applied Crystallography |
| doi_str_mv |
10.1107/s1600576720006020 |
| facet_avail |
Online |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwNy9zMTYwMDU3NjcyMDAwNjAyMA |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwNy9zMTYwMDU3NjcyMDAwNjAyMA |
| institution |
DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 |
| imprint |
International Union of Crystallography (IUCr), 2020 |
| imprint_str_mv |
International Union of Crystallography (IUCr), 2020 |
| issn |
1600-5767 |
| issn_str_mv |
1600-5767 |
| language |
Undetermined |
| mega_collection |
International Union of Crystallography (IUCr) (CrossRef) |
| match_str |
boureau2020darkfieldelectronholographyasarecordingofcrystaldiffractioninrealspaceacomparativestudywithhighresolutionxraydiffractionforstrainanalysisofmosfets |
| publishDateSort |
2020 |
| publisher |
International Union of Crystallography (IUCr) |
| recordtype |
ai |
| record_format |
ai |
| series |
Journal of Applied Crystallography |
| source_id |
49 |
| title |
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_unstemmed |
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_full |
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_fullStr |
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_full_unstemmed |
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_short |
Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_sort |
dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution x-ray diffraction for strain analysis of mosfets |
| topic |
General Biochemistry, Genetics and Molecular Biology |
| url |
http://dx.doi.org/10.1107/s1600576720006020 |
| publishDate |
2020 |
| physical |
885-895 |
| description |
<jats:p>Diffraction-based techniques, with either electrons or photons, are commonly used in materials science to measure elastic strain in crystalline specimens. In this paper, the focus is on two advanced techniques capable of accessing strain information at the nanoscale: high-resolution X-ray diffraction (HRXRD) and the transmission electron microscopy technique of dark-field electron holography (DFEH). Both experimentally record an image formed by a diffracted beam: a map of the intensity in the vicinity of a Bragg reflection spot in the former, and an interference pattern in the latter. The theory that governs these experiments will be described in a unified framework. The role of the geometric phase, which encodes the displacement field of a set of atomic planes in the resulting diffracted beam, is emphasized. A detailed comparison of experimental results acquired at a synchrotron and with a state-of-the-art transmission electron microscope is presented for the same test structure: an array of dummy metal–oxide–semiconductor field-effect transistors (MOSFETs) from the 22 nm technology node. Both techniques give access to accurate strain information. Experiment, theory and modelling allow the illustration of the similarities and inherent differences between the HRXRD and DFEH techniques.</jats:p> |
| container_issue |
4 |
| container_start_page |
885 |
| container_title |
Journal of Applied Crystallography |
| container_volume |
53 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792332020369588229 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T13:50:14.273Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Dark-field+electron+holography+as+a+recording+of+crystal+diffraction+in+real+space%3A+a+comparative+study+with+high-resolution+X-ray+diffraction+for+strain+analysis+of+MOSFETs&rft.date=2020-08-01&genre=article&issn=1600-5767&volume=53&issue=4&spage=885&epage=895&pages=885-895&jtitle=Journal+of+Applied+Crystallography&atitle=Dark-field+electron+holography+as+a+recording+of+crystal+diffraction+in+real+space%3A+a+comparative+study+with+high-resolution+X-ray+diffraction+for+strain+analysis+of+MOSFETs&aulast=H%C3%BFtch&aufirst=Martin&rft_id=info%3Adoi%2F10.1107%2Fs1600576720006020&rft.language%5B0%5D=und |
| SOLR | |
| _version_ | 1792332020369588229 |
| author | Boureau, Victor, Durand, Aurèle, Gergaud, Patrice, Le Cunff, Delphine, Wormington, Matthew, Rouchon, Denis, Claverie, Alain, Benoit, Daniel, Hÿtch, Martin |
| author_facet | Boureau, Victor, Durand, Aurèle, Gergaud, Patrice, Le Cunff, Delphine, Wormington, Matthew, Rouchon, Denis, Claverie, Alain, Benoit, Daniel, Hÿtch, Martin, Boureau, Victor, Durand, Aurèle, Gergaud, Patrice, Le Cunff, Delphine, Wormington, Matthew, Rouchon, Denis, Claverie, Alain, Benoit, Daniel, Hÿtch, Martin |
| author_sort | boureau, victor |
| container_issue | 4 |
| container_start_page | 885 |
| container_title | Journal of Applied Crystallography |
| container_volume | 53 |
| description | <jats:p>Diffraction-based techniques, with either electrons or photons, are commonly used in materials science to measure elastic strain in crystalline specimens. In this paper, the focus is on two advanced techniques capable of accessing strain information at the nanoscale: high-resolution X-ray diffraction (HRXRD) and the transmission electron microscopy technique of dark-field electron holography (DFEH). Both experimentally record an image formed by a diffracted beam: a map of the intensity in the vicinity of a Bragg reflection spot in the former, and an interference pattern in the latter. The theory that governs these experiments will be described in a unified framework. The role of the geometric phase, which encodes the displacement field of a set of atomic planes in the resulting diffracted beam, is emphasized. A detailed comparison of experimental results acquired at a synchrotron and with a state-of-the-art transmission electron microscope is presented for the same test structure: an array of dummy metal–oxide–semiconductor field-effect transistors (MOSFETs) from the 22 nm technology node. Both techniques give access to accurate strain information. Experiment, theory and modelling allow the illustration of the similarities and inherent differences between the HRXRD and DFEH techniques.</jats:p> |
| doi_str_mv | 10.1107/s1600576720006020 |
| facet_avail | Online |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwNy9zMTYwMDU3NjcyMDAwNjAyMA |
| imprint | International Union of Crystallography (IUCr), 2020 |
| imprint_str_mv | International Union of Crystallography (IUCr), 2020 |
| institution | DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1 |
| issn | 1600-5767 |
| issn_str_mv | 1600-5767 |
| language | Undetermined |
| last_indexed | 2024-03-01T13:50:14.273Z |
| match_str | boureau2020darkfieldelectronholographyasarecordingofcrystaldiffractioninrealspaceacomparativestudywithhighresolutionxraydiffractionforstrainanalysisofmosfets |
| mega_collection | International Union of Crystallography (IUCr) (CrossRef) |
| physical | 885-895 |
| publishDate | 2020 |
| publishDateSort | 2020 |
| publisher | International Union of Crystallography (IUCr) |
| record_format | ai |
| recordtype | ai |
| series | Journal of Applied Crystallography |
| source_id | 49 |
| spelling | Boureau, Victor Durand, Aurèle Gergaud, Patrice Le Cunff, Delphine Wormington, Matthew Rouchon, Denis Claverie, Alain Benoit, Daniel Hÿtch, Martin 1600-5767 International Union of Crystallography (IUCr) General Biochemistry, Genetics and Molecular Biology http://dx.doi.org/10.1107/s1600576720006020 <jats:p>Diffraction-based techniques, with either electrons or photons, are commonly used in materials science to measure elastic strain in crystalline specimens. In this paper, the focus is on two advanced techniques capable of accessing strain information at the nanoscale: high-resolution X-ray diffraction (HRXRD) and the transmission electron microscopy technique of dark-field electron holography (DFEH). Both experimentally record an image formed by a diffracted beam: a map of the intensity in the vicinity of a Bragg reflection spot in the former, and an interference pattern in the latter. The theory that governs these experiments will be described in a unified framework. The role of the geometric phase, which encodes the displacement field of a set of atomic planes in the resulting diffracted beam, is emphasized. A detailed comparison of experimental results acquired at a synchrotron and with a state-of-the-art transmission electron microscope is presented for the same test structure: an array of dummy metal–oxide–semiconductor field-effect transistors (MOSFETs) from the 22 nm technology node. Both techniques give access to accurate strain information. Experiment, theory and modelling allow the illustration of the similarities and inherent differences between the HRXRD and DFEH techniques.</jats:p> Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs Journal of Applied Crystallography |
| spellingShingle | Boureau, Victor, Durand, Aurèle, Gergaud, Patrice, Le Cunff, Delphine, Wormington, Matthew, Rouchon, Denis, Claverie, Alain, Benoit, Daniel, Hÿtch, Martin, Journal of Applied Crystallography, Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs, General Biochemistry, Genetics and Molecular Biology |
| title | Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_full | Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_fullStr | Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_full_unstemmed | Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_short | Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| title_sort | dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution x-ray diffraction for strain analysis of mosfets |
| title_unstemmed | Dark-field electron holography as a recording of crystal diffraction in real space: a comparative study with high-resolution X-ray diffraction for strain analysis of MOSFETs |
| topic | General Biochemistry, Genetics and Molecular Biology |
| url | http://dx.doi.org/10.1107/s1600576720006020 |