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Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon
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| Zeitschriftentitel: | Physical Review B |
|---|---|
| Personen und Körperschaften: | |
| In: | Physical Review B, 41, 1990, 5, S. 3248-3248 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
American Physical Society (APS)
|
| author_facet |
Chen, Yang-Fang Chen, Yang-Fang |
|---|---|
| author |
Chen, Yang-Fang |
| spellingShingle |
Chen, Yang-Fang Physical Review B Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| author_sort |
chen, yang-fang |
| spelling |
Chen, Yang-Fang 0163-1829 1095-3795 American Physical Society (APS) http://dx.doi.org/10.1103/physrevb.41.3248 Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon Physical Review B |
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| title |
Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_unstemmed |
Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_full |
Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_fullStr |
Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_full_unstemmed |
Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_short |
Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_sort |
erratum: stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
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http://dx.doi.org/10.1103/physrevb.41.3248 |
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1990 |
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| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTEwMy9waHlzcmV2Yi40MS4zMjQ4 |
| imprint | American Physical Society (APS), 1990 |
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| physical | 3248-3248 |
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| spelling | Chen, Yang-Fang 0163-1829 1095-3795 American Physical Society (APS) http://dx.doi.org/10.1103/physrevb.41.3248 Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon Physical Review B |
| spellingShingle | Chen, Yang-Fang, Physical Review B, Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title | Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_full | Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_fullStr | Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_full_unstemmed | Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_short | Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_sort | erratum: stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| title_unstemmed | Erratum: Stretched-exponential law for carrier capture kinetics of a trapping center in compensated amorphous silicon |
| url | http://dx.doi.org/10.1103/physrevb.41.3248 |