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Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers
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| Zeitschriftentitel: | International Journal of Microwave and Wireless Technologies |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | International Journal of Microwave and Wireless Technologies, 5, 2013, 3, S. 261-269 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Cambridge University Press (CUP)
|
| Schlagwörter: |
| author_facet |
Déchansiaud, A. Sommet, R. Reveyrand, T. Bouw, D. Chang, C. Camiade, M. Deborgies, F. Quéré, R. Déchansiaud, A. Sommet, R. Reveyrand, T. Bouw, D. Chang, C. Camiade, M. Deborgies, F. Quéré, R. |
|---|---|
| author |
Déchansiaud, A. Sommet, R. Reveyrand, T. Bouw, D. Chang, C. Camiade, M. Deborgies, F. Quéré, R. |
| spellingShingle |
Déchansiaud, A. Sommet, R. Reveyrand, T. Bouw, D. Chang, C. Camiade, M. Deborgies, F. Quéré, R. International Journal of Microwave and Wireless Technologies Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers Electrical and Electronic Engineering |
| author_sort |
déchansiaud, a. |
| spelling |
Déchansiaud, A. Sommet, R. Reveyrand, T. Bouw, D. Chang, C. Camiade, M. Deborgies, F. Quéré, R. 1759-0787 1759-0795 Cambridge University Press (CUP) Electrical and Electronic Engineering http://dx.doi.org/10.1017/s1759078713000482 <jats:p>This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.</jats:p> Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers International Journal of Microwave and Wireless Technologies |
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Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_unstemmed |
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_full |
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_fullStr |
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_full_unstemmed |
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_short |
Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_sort |
design, modeling and characterization of mmic integrated cascode cell for compact ku-band power amplifiers |
| topic |
Electrical and Electronic Engineering |
| url |
http://dx.doi.org/10.1017/s1759078713000482 |
| publishDate |
2013 |
| physical |
261-269 |
| description |
<jats:p>This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.</jats:p> |
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| author | Déchansiaud, A., Sommet, R., Reveyrand, T., Bouw, D., Chang, C., Camiade, M., Deborgies, F., Quéré, R. |
| author_facet | Déchansiaud, A., Sommet, R., Reveyrand, T., Bouw, D., Chang, C., Camiade, M., Deborgies, F., Quéré, R., Déchansiaud, A., Sommet, R., Reveyrand, T., Bouw, D., Chang, C., Camiade, M., Deborgies, F., Quéré, R. |
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| description | <jats:p>This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.</jats:p> |
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| physical | 261-269 |
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| spelling | Déchansiaud, A. Sommet, R. Reveyrand, T. Bouw, D. Chang, C. Camiade, M. Deborgies, F. Quéré, R. 1759-0787 1759-0795 Cambridge University Press (CUP) Electrical and Electronic Engineering http://dx.doi.org/10.1017/s1759078713000482 <jats:p>This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.</jats:p> Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers International Journal of Microwave and Wireless Technologies |
| spellingShingle | Déchansiaud, A., Sommet, R., Reveyrand, T., Bouw, D., Chang, C., Camiade, M., Deborgies, F., Quéré, R., International Journal of Microwave and Wireless Technologies, Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers, Electrical and Electronic Engineering |
| title | Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_full | Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_fullStr | Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_full_unstemmed | Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_short | Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| title_sort | design, modeling and characterization of mmic integrated cascode cell for compact ku-band power amplifiers |
| title_unstemmed | Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers |
| topic | Electrical and Electronic Engineering |
| url | http://dx.doi.org/10.1017/s1759078713000482 |