Eintrag weiter verarbeiten
An enhanced approach to numerical modeling of heavily irradiated silicon devices
Gespeichert in:
| Zeitschriftentitel: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
|---|---|
| Personen und Körperschaften: | , , , , , , |
| In: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 186, 2002, 1-4, S. 171-175 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Elsevier BV
|
| Schlagwörter: |
| author_facet |
Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G.M. MacEvoy, B.C. Hall, G. Placidi, P. Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G.M. MacEvoy, B.C. Hall, G. Placidi, P. |
|---|---|
| author |
Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G.M. MacEvoy, B.C. Hall, G. Placidi, P. |
| spellingShingle |
Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G.M. MacEvoy, B.C. Hall, G. Placidi, P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms An enhanced approach to numerical modeling of heavily irradiated silicon devices Instrumentation Nuclear and High Energy Physics |
| author_sort |
moscatelli, f. |
| spelling |
Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G.M. MacEvoy, B.C. Hall, G. Placidi, P. 0168-583X Elsevier BV Instrumentation Nuclear and High Energy Physics http://dx.doi.org/10.1016/s0168-583x(01)00899-0 An enhanced approach to numerical modeling of heavily irradiated silicon devices Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| doi_str_mv |
10.1016/s0168-583x(01)00899-0 |
| facet_avail |
Online |
| finc_class_facet |
Technik Physik Allgemeines |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAxNi9zMDE2OC01ODN4KDAxKTAwODk5LTA |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAxNi9zMDE2OC01ODN4KDAxKTAwODk5LTA |
| institution |
DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 |
| imprint |
Elsevier BV, 2002 |
| imprint_str_mv |
Elsevier BV, 2002 |
| issn |
0168-583X |
| issn_str_mv |
0168-583X |
| language |
English |
| mega_collection |
Elsevier BV (CrossRef) |
| match_str |
moscatelli2002anenhancedapproachtonumericalmodelingofheavilyirradiatedsilicondevices |
| publishDateSort |
2002 |
| publisher |
Elsevier BV |
| recordtype |
ai |
| record_format |
ai |
| series |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| source_id |
49 |
| title |
An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_unstemmed |
An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_full |
An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_fullStr |
An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_full_unstemmed |
An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_short |
An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_sort |
an enhanced approach to numerical modeling of heavily irradiated silicon devices |
| topic |
Instrumentation Nuclear and High Energy Physics |
| url |
http://dx.doi.org/10.1016/s0168-583x(01)00899-0 |
| publishDate |
2002 |
| physical |
171-175 |
| description |
|
| container_issue |
1-4 |
| container_start_page |
171 |
| container_title |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| container_volume |
186 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792323040653082625 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T11:27:30.055Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=An+enhanced+approach+to+numerical+modeling+of+heavily+irradiated+silicon+devices&rft.date=2002-01-01&genre=article&issn=0168-583X&volume=186&issue=1-4&spage=171&epage=175&pages=171-175&jtitle=Nuclear+Instruments+and+Methods+in+Physics+Research+Section+B%3A+Beam+Interactions+with+Materials+and+Atoms&atitle=An+enhanced+approach+to+numerical+modeling+of+heavily+irradiated+silicon+devices&aulast=Placidi&aufirst=P.&rft_id=info%3Adoi%2F10.1016%2Fs0168-583x%2801%2900899-0&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792323040653082625 |
| author | Moscatelli, F., Santocchia, A., Passeri, D., Bilei, G.M., MacEvoy, B.C., Hall, G., Placidi, P. |
| author_facet | Moscatelli, F., Santocchia, A., Passeri, D., Bilei, G.M., MacEvoy, B.C., Hall, G., Placidi, P., Moscatelli, F., Santocchia, A., Passeri, D., Bilei, G.M., MacEvoy, B.C., Hall, G., Placidi, P. |
| author_sort | moscatelli, f. |
| container_issue | 1-4 |
| container_start_page | 171 |
| container_title | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| container_volume | 186 |
| description | |
| doi_str_mv | 10.1016/s0168-583x(01)00899-0 |
| facet_avail | Online |
| finc_class_facet | Technik, Physik, Allgemeines |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAxNi9zMDE2OC01ODN4KDAxKTAwODk5LTA |
| imprint | Elsevier BV, 2002 |
| imprint_str_mv | Elsevier BV, 2002 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
| issn | 0168-583X |
| issn_str_mv | 0168-583X |
| language | English |
| last_indexed | 2024-03-01T11:27:30.055Z |
| match_str | moscatelli2002anenhancedapproachtonumericalmodelingofheavilyirradiatedsilicondevices |
| mega_collection | Elsevier BV (CrossRef) |
| physical | 171-175 |
| publishDate | 2002 |
| publishDateSort | 2002 |
| publisher | Elsevier BV |
| record_format | ai |
| recordtype | ai |
| series | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| source_id | 49 |
| spelling | Moscatelli, F. Santocchia, A. Passeri, D. Bilei, G.M. MacEvoy, B.C. Hall, G. Placidi, P. 0168-583X Elsevier BV Instrumentation Nuclear and High Energy Physics http://dx.doi.org/10.1016/s0168-583x(01)00899-0 An enhanced approach to numerical modeling of heavily irradiated silicon devices Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms |
| spellingShingle | Moscatelli, F., Santocchia, A., Passeri, D., Bilei, G.M., MacEvoy, B.C., Hall, G., Placidi, P., Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, An enhanced approach to numerical modeling of heavily irradiated silicon devices, Instrumentation, Nuclear and High Energy Physics |
| title | An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_full | An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_fullStr | An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_full_unstemmed | An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_short | An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_sort | an enhanced approach to numerical modeling of heavily irradiated silicon devices |
| title_unstemmed | An enhanced approach to numerical modeling of heavily irradiated silicon devices |
| topic | Instrumentation, Nuclear and High Energy Physics |
| url | http://dx.doi.org/10.1016/s0168-583x(01)00899-0 |