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Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells
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| Zeitschriftentitel: | Solar RRL |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | Solar RRL, 4, 2020, 1 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
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| Schlagwörter: |
| author_facet |
Liu, Yujin Zhu, Jundong Cai, Lun Yao, Zhirong Duan, Chunyan Zhao, Zhijuan Zhao, Chuanxi Mai, Wenjie Liu, Yujin Zhu, Jundong Cai, Lun Yao, Zhirong Duan, Chunyan Zhao, Zhijuan Zhao, Chuanxi Mai, Wenjie |
|---|---|
| author |
Liu, Yujin Zhu, Jundong Cai, Lun Yao, Zhirong Duan, Chunyan Zhao, Zhijuan Zhao, Chuanxi Mai, Wenjie |
| spellingShingle |
Liu, Yujin Zhu, Jundong Cai, Lun Yao, Zhirong Duan, Chunyan Zhao, Zhijuan Zhao, Chuanxi Mai, Wenjie Solar RRL Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells Electrical and Electronic Engineering Energy Engineering and Power Technology Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
| author_sort |
liu, yujin |
| spelling |
Liu, Yujin Zhu, Jundong Cai, Lun Yao, Zhirong Duan, Chunyan Zhao, Zhijuan Zhao, Chuanxi Mai, Wenjie 2367-198X 2367-198X Wiley Electrical and Electronic Engineering Energy Engineering and Power Technology Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1002/solr.201900339 <jats:sec><jats:label /><jats:p>Cuprous oxide (Cu<jats:sub>2</jats:sub>O) is a nontoxic and earth‐abundant semiconductor material, which is a promising candidate for low‐cost photovoltaic applications. Although Cu<jats:sub>2</jats:sub>O‐based solar cells have been studied for a few decades, they still suffer from disappointing photovoltaic performance due to its high trap‐state density and inferior carrier collection efficiency. Herein, a facile solution method is demonstrated to synthesize high‐quality Cu<jats:sub>2</jats:sub>O films with low defects as hole transport layers (HTLs) and the Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells are fabricated. Moreover, a variety of interfacial engineering and light management strategies are adopted to push the efficiency limit of Cu<jats:sub>2</jats:sub>O/Si solar cells, including a Ag transparent conductive layer, HNO<jats:sub>3</jats:sub> passivation, Mg electrode back contact, and MoO<jats:sub><jats:italic>x</jats:italic></jats:sub> antireflection layer, which enable the boosting of carrier separation and reduce the loss of incident solar light, yielding a record high power conversion efficiency of 9.54%. This work may pave the way for economical and environment‐friendly use of Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells in daily life.</jats:p></jats:sec> Solution‐Processed High‐Quality Cu<sub>2</sub>O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu<sub>2</sub>O/Si Heterojunction Solar Cells Solar RRL |
| doi_str_mv |
10.1002/solr.201900339 |
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Physik Technik Mathematik |
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| title |
Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_unstemmed |
Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_full |
Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_fullStr |
Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_full_unstemmed |
Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_short |
Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_sort |
solution‐processed high‐quality cu<sub>2</sub>o thin films as hole transport layers for pushing the conversion efficiency limit of cu<sub>2</sub>o/si heterojunction solar cells |
| topic |
Electrical and Electronic Engineering Energy Engineering and Power Technology Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials |
| url |
http://dx.doi.org/10.1002/solr.201900339 |
| publishDate |
2020 |
| physical |
|
| description |
<jats:sec><jats:label /><jats:p>Cuprous oxide (Cu<jats:sub>2</jats:sub>O) is a nontoxic and earth‐abundant semiconductor material, which is a promising candidate for low‐cost photovoltaic applications. Although Cu<jats:sub>2</jats:sub>O‐based solar cells have been studied for a few decades, they still suffer from disappointing photovoltaic performance due to its high trap‐state density and inferior carrier collection efficiency. Herein, a facile solution method is demonstrated to synthesize high‐quality Cu<jats:sub>2</jats:sub>O films with low defects as hole transport layers (HTLs) and the Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells are fabricated. Moreover, a variety of interfacial engineering and light management strategies are adopted to push the efficiency limit of Cu<jats:sub>2</jats:sub>O/Si solar cells, including a Ag transparent conductive layer, HNO<jats:sub>3</jats:sub> passivation, Mg electrode back contact, and MoO<jats:sub><jats:italic>x</jats:italic></jats:sub> antireflection layer, which enable the boosting of carrier separation and reduce the loss of incident solar light, yielding a record high power conversion efficiency of 9.54%. This work may pave the way for economical and environment‐friendly use of Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells in daily life.</jats:p></jats:sec> |
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| author | Liu, Yujin, Zhu, Jundong, Cai, Lun, Yao, Zhirong, Duan, Chunyan, Zhao, Zhijuan, Zhao, Chuanxi, Mai, Wenjie |
| author_facet | Liu, Yujin, Zhu, Jundong, Cai, Lun, Yao, Zhirong, Duan, Chunyan, Zhao, Zhijuan, Zhao, Chuanxi, Mai, Wenjie, Liu, Yujin, Zhu, Jundong, Cai, Lun, Yao, Zhirong, Duan, Chunyan, Zhao, Zhijuan, Zhao, Chuanxi, Mai, Wenjie |
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| description | <jats:sec><jats:label /><jats:p>Cuprous oxide (Cu<jats:sub>2</jats:sub>O) is a nontoxic and earth‐abundant semiconductor material, which is a promising candidate for low‐cost photovoltaic applications. Although Cu<jats:sub>2</jats:sub>O‐based solar cells have been studied for a few decades, they still suffer from disappointing photovoltaic performance due to its high trap‐state density and inferior carrier collection efficiency. Herein, a facile solution method is demonstrated to synthesize high‐quality Cu<jats:sub>2</jats:sub>O films with low defects as hole transport layers (HTLs) and the Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells are fabricated. Moreover, a variety of interfacial engineering and light management strategies are adopted to push the efficiency limit of Cu<jats:sub>2</jats:sub>O/Si solar cells, including a Ag transparent conductive layer, HNO<jats:sub>3</jats:sub> passivation, Mg electrode back contact, and MoO<jats:sub><jats:italic>x</jats:italic></jats:sub> antireflection layer, which enable the boosting of carrier separation and reduce the loss of incident solar light, yielding a record high power conversion efficiency of 9.54%. This work may pave the way for economical and environment‐friendly use of Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells in daily life.</jats:p></jats:sec> |
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| spelling | Liu, Yujin Zhu, Jundong Cai, Lun Yao, Zhirong Duan, Chunyan Zhao, Zhijuan Zhao, Chuanxi Mai, Wenjie 2367-198X 2367-198X Wiley Electrical and Electronic Engineering Energy Engineering and Power Technology Atomic and Molecular Physics, and Optics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1002/solr.201900339 <jats:sec><jats:label /><jats:p>Cuprous oxide (Cu<jats:sub>2</jats:sub>O) is a nontoxic and earth‐abundant semiconductor material, which is a promising candidate for low‐cost photovoltaic applications. Although Cu<jats:sub>2</jats:sub>O‐based solar cells have been studied for a few decades, they still suffer from disappointing photovoltaic performance due to its high trap‐state density and inferior carrier collection efficiency. Herein, a facile solution method is demonstrated to synthesize high‐quality Cu<jats:sub>2</jats:sub>O films with low defects as hole transport layers (HTLs) and the Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells are fabricated. Moreover, a variety of interfacial engineering and light management strategies are adopted to push the efficiency limit of Cu<jats:sub>2</jats:sub>O/Si solar cells, including a Ag transparent conductive layer, HNO<jats:sub>3</jats:sub> passivation, Mg electrode back contact, and MoO<jats:sub><jats:italic>x</jats:italic></jats:sub> antireflection layer, which enable the boosting of carrier separation and reduce the loss of incident solar light, yielding a record high power conversion efficiency of 9.54%. This work may pave the way for economical and environment‐friendly use of Cu<jats:sub>2</jats:sub>O/Si heterojunction solar cells in daily life.</jats:p></jats:sec> Solution‐Processed High‐Quality Cu<sub>2</sub>O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu<sub>2</sub>O/Si Heterojunction Solar Cells Solar RRL |
| spellingShingle | Liu, Yujin, Zhu, Jundong, Cai, Lun, Yao, Zhirong, Duan, Chunyan, Zhao, Zhijuan, Zhao, Chuanxi, Mai, Wenjie, Solar RRL, Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells, Electrical and Electronic Engineering, Energy Engineering and Power Technology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
| title | Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_full | Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_fullStr | Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_full_unstemmed | Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_short | Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| title_sort | solution‐processed high‐quality cu<sub>2</sub>o thin films as hole transport layers for pushing the conversion efficiency limit of cu<sub>2</sub>o/si heterojunction solar cells |
| title_unstemmed | Solution‐Processed High‐Quality Cu2O Thin Films as Hole Transport Layers for Pushing the Conversion Efficiency Limit of Cu2O/Si Heterojunction Solar Cells |
| topic | Electrical and Electronic Engineering, Energy Engineering and Power Technology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials |
| url | http://dx.doi.org/10.1002/solr.201900339 |