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Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92
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| Zeitschriftentitel: | physica status solidi c |
|---|---|
| Personen und Körperschaften: | , , , , , |
| In: | physica status solidi c, 12, 2015, 6, S. 588-591 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
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| Schlagwörter: |
| author_facet |
Gurieva, G. Dimitrievska, M. Zander, S. Pérez‐Rodríguez, A. Izquierdo‐Roca, V. Schorr, S. Gurieva, G. Dimitrievska, M. Zander, S. Pérez‐Rodríguez, A. Izquierdo‐Roca, V. Schorr, S. |
|---|---|
| author |
Gurieva, G. Dimitrievska, M. Zander, S. Pérez‐Rodríguez, A. Izquierdo‐Roca, V. Schorr, S. |
| spellingShingle |
Gurieva, G. Dimitrievska, M. Zander, S. Pérez‐Rodríguez, A. Izquierdo‐Roca, V. Schorr, S. physica status solidi c Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 Condensed Matter Physics |
| author_sort |
gurieva, g. |
| spelling |
Gurieva, G. Dimitrievska, M. Zander, S. Pérez‐Rodríguez, A. Izquierdo‐Roca, V. Schorr, S. 1862-6351 1610-1642 Wiley Condensed Matter Physics http://dx.doi.org/10.1002/pssc.201400307 <jats:title>Abstract</jats:title><jats:p>Quaternary Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> compounds are promising semiconductor materials for absorber layer in thin film solar cells. Record efficiency devices (12.6%) exhibit an off‐stoichiometric composition of the absorber layer. These deviations from stoichiometry cause intrinsic point defects, which determine the electronic properties of the semiconductor significantly. A structural analysis of a nearly C‐type off‐stoichiometric Cu and Sn rich and Zn poor Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> mixed crystal with x=0.48 by a neutron diffraction investigation was performed. The average neutron scattering length method was applied, showing that the mixed crystal adopts the kesterite type structure. A detailed cation distribution analysis revealed the occurrence of Zn<jats:sub>Cu(2a)</jats:sub> and Sn<jats:sub>Zn</jats:sub> anti‐site point defects additional to the Cu‐Zn disorder in the planes at z=1/4 and 3/4. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> Structural characterisation of Cu<sub>2.04</sub>Zn<sub>0.91</sub>Sn<sub>1.05</sub>S<sub>2.08</sub>Se<sub>1.92</sub> physica status solidi c |
| doi_str_mv |
10.1002/pssc.201400307 |
| facet_avail |
Online |
| finc_class_facet |
Physik |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9wc3NjLjIwMTQwMDMwNw |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9wc3NjLjIwMTQwMDMwNw |
| institution |
DE-Gla1 DE-Zi4 DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-D161 |
| imprint |
Wiley, 2015 |
| imprint_str_mv |
Wiley, 2015 |
| issn |
1862-6351 1610-1642 |
| issn_str_mv |
1862-6351 1610-1642 |
| language |
English |
| mega_collection |
Wiley (CrossRef) |
| match_str |
gurieva2015structuralcharacterisationofcu204zn091sn105s208se192 |
| publishDateSort |
2015 |
| publisher |
Wiley |
| recordtype |
ai |
| record_format |
ai |
| series |
physica status solidi c |
| source_id |
49 |
| title |
Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_unstemmed |
Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_full |
Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_fullStr |
Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_full_unstemmed |
Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_short |
Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_sort |
structural characterisation of cu<sub>2.04</sub>zn<sub>0.91</sub>sn<sub>1.05</sub>s<sub>2.08</sub>se<sub>1.92</sub> |
| topic |
Condensed Matter Physics |
| url |
http://dx.doi.org/10.1002/pssc.201400307 |
| publishDate |
2015 |
| physical |
588-591 |
| description |
<jats:title>Abstract</jats:title><jats:p>Quaternary Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> compounds are promising semiconductor materials for absorber layer in thin film solar cells. Record efficiency devices (12.6%) exhibit an off‐stoichiometric composition of the absorber layer. These deviations from stoichiometry cause intrinsic point defects, which determine the electronic properties of the semiconductor significantly. A structural analysis of a nearly C‐type off‐stoichiometric Cu and Sn rich and Zn poor Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> mixed crystal with x=0.48 by a neutron diffraction investigation was performed. The average neutron scattering length method was applied, showing that the mixed crystal adopts the kesterite type structure. A detailed cation distribution analysis revealed the occurrence of Zn<jats:sub>Cu(2a)</jats:sub> and Sn<jats:sub>Zn</jats:sub> anti‐site point defects additional to the Cu‐Zn disorder in the planes at z=1/4 and 3/4. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
| container_issue |
6 |
| container_start_page |
588 |
| container_title |
physica status solidi c |
| container_volume |
12 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792335219418726403 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T14:41:02.348Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Structural+characterisation+of+Cu2.04Zn0.91Sn1.05S2.08Se1.92&rft.date=2015-06-01&genre=article&issn=1610-1642&volume=12&issue=6&spage=588&epage=591&pages=588-591&jtitle=physica+status+solidi+c&atitle=Structural+characterisation+of+Cu%3Csub%3E2.04%3C%2Fsub%3EZn%3Csub%3E0.91%3C%2Fsub%3ESn%3Csub%3E1.05%3C%2Fsub%3ES%3Csub%3E2.08%3C%2Fsub%3ESe%3Csub%3E1.92%3C%2Fsub%3E&aulast=Schorr&aufirst=S.&rft_id=info%3Adoi%2F10.1002%2Fpssc.201400307&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792335219418726403 |
| author | Gurieva, G., Dimitrievska, M., Zander, S., Pérez‐Rodríguez, A., Izquierdo‐Roca, V., Schorr, S. |
| author_facet | Gurieva, G., Dimitrievska, M., Zander, S., Pérez‐Rodríguez, A., Izquierdo‐Roca, V., Schorr, S., Gurieva, G., Dimitrievska, M., Zander, S., Pérez‐Rodríguez, A., Izquierdo‐Roca, V., Schorr, S. |
| author_sort | gurieva, g. |
| container_issue | 6 |
| container_start_page | 588 |
| container_title | physica status solidi c |
| container_volume | 12 |
| description | <jats:title>Abstract</jats:title><jats:p>Quaternary Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> compounds are promising semiconductor materials for absorber layer in thin film solar cells. Record efficiency devices (12.6%) exhibit an off‐stoichiometric composition of the absorber layer. These deviations from stoichiometry cause intrinsic point defects, which determine the electronic properties of the semiconductor significantly. A structural analysis of a nearly C‐type off‐stoichiometric Cu and Sn rich and Zn poor Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> mixed crystal with x=0.48 by a neutron diffraction investigation was performed. The average neutron scattering length method was applied, showing that the mixed crystal adopts the kesterite type structure. A detailed cation distribution analysis revealed the occurrence of Zn<jats:sub>Cu(2a)</jats:sub> and Sn<jats:sub>Zn</jats:sub> anti‐site point defects additional to the Cu‐Zn disorder in the planes at z=1/4 and 3/4. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
| doi_str_mv | 10.1002/pssc.201400307 |
| facet_avail | Online |
| finc_class_facet | Physik |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9wc3NjLjIwMTQwMDMwNw |
| imprint | Wiley, 2015 |
| imprint_str_mv | Wiley, 2015 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
| issn | 1862-6351, 1610-1642 |
| issn_str_mv | 1862-6351, 1610-1642 |
| language | English |
| last_indexed | 2024-03-01T14:41:02.348Z |
| match_str | gurieva2015structuralcharacterisationofcu204zn091sn105s208se192 |
| mega_collection | Wiley (CrossRef) |
| physical | 588-591 |
| publishDate | 2015 |
| publishDateSort | 2015 |
| publisher | Wiley |
| record_format | ai |
| recordtype | ai |
| series | physica status solidi c |
| source_id | 49 |
| spelling | Gurieva, G. Dimitrievska, M. Zander, S. Pérez‐Rodríguez, A. Izquierdo‐Roca, V. Schorr, S. 1862-6351 1610-1642 Wiley Condensed Matter Physics http://dx.doi.org/10.1002/pssc.201400307 <jats:title>Abstract</jats:title><jats:p>Quaternary Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> compounds are promising semiconductor materials for absorber layer in thin film solar cells. Record efficiency devices (12.6%) exhibit an off‐stoichiometric composition of the absorber layer. These deviations from stoichiometry cause intrinsic point defects, which determine the electronic properties of the semiconductor significantly. A structural analysis of a nearly C‐type off‐stoichiometric Cu and Sn rich and Zn poor Cu<jats:sub>2</jats:sub>ZnSn(S<jats:sub>1‐x</jats:sub>Se<jats:sub>x</jats:sub>)<jats:sub>4</jats:sub> mixed crystal with x=0.48 by a neutron diffraction investigation was performed. The average neutron scattering length method was applied, showing that the mixed crystal adopts the kesterite type structure. A detailed cation distribution analysis revealed the occurrence of Zn<jats:sub>Cu(2a)</jats:sub> and Sn<jats:sub>Zn</jats:sub> anti‐site point defects additional to the Cu‐Zn disorder in the planes at z=1/4 and 3/4. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> Structural characterisation of Cu<sub>2.04</sub>Zn<sub>0.91</sub>Sn<sub>1.05</sub>S<sub>2.08</sub>Se<sub>1.92</sub> physica status solidi c |
| spellingShingle | Gurieva, G., Dimitrievska, M., Zander, S., Pérez‐Rodríguez, A., Izquierdo‐Roca, V., Schorr, S., physica status solidi c, Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92, Condensed Matter Physics |
| title | Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_full | Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_fullStr | Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_full_unstemmed | Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_short | Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| title_sort | structural characterisation of cu<sub>2.04</sub>zn<sub>0.91</sub>sn<sub>1.05</sub>s<sub>2.08</sub>se<sub>1.92</sub> |
| title_unstemmed | Structural characterisation of Cu2.04Zn0.91Sn1.05S2.08Se1.92 |
| topic | Condensed Matter Physics |
| url | http://dx.doi.org/10.1002/pssc.201400307 |