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Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films
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| Zeitschriftentitel: | physica status solidi c |
|---|---|
| Personen und Körperschaften: | , , , |
| In: | physica status solidi c, 11, 2014, 9-10, S. 1468-1471 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
|
| Schlagwörter: |
| author_facet |
Schönau, S. Ruske, F. Neubert, S. Rech, B. Schönau, S. Ruske, F. Neubert, S. Rech, B. |
|---|---|
| author |
Schönau, S. Ruske, F. Neubert, S. Rech, B. |
| spellingShingle |
Schönau, S. Ruske, F. Neubert, S. Rech, B. physica status solidi c Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films Condensed Matter Physics |
| author_sort |
schönau, s. |
| spelling |
Schönau, S. Ruske, F. Neubert, S. Rech, B. 1862-6351 1610-1642 Wiley Condensed Matter Physics http://dx.doi.org/10.1002/pssc.201400002 <jats:title>Abstract</jats:title><jats:p>In order to clarify the origin of the previously reported reduction of sub‐band gap absorption of sputtered ZnO:Al films upon thermal annealing and raising deposition temperature, structural characterization using Ra‐man spectroscopy was carried out on various films. Correlation of the Urbach energy to the FWHM of the E<jats:sup>(high)</jats:sup><jats:sub>2</jats:sub> mode was found. Oxygen addition to the film growth did not result in changes of the Urbach energy, despite pronounced changes of the electrical properties. The results suggest that extended defects, rather than intrinsic point defects, give rise to the sub‐band gap absorption. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films physica status solidi c |
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physica status solidi c |
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| title |
Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_unstemmed |
Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_full |
Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_fullStr |
Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_full_unstemmed |
Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_short |
Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_sort |
annealing related changes in near‐edge absorption and structural properties of al‐doped zno thin films |
| topic |
Condensed Matter Physics |
| url |
http://dx.doi.org/10.1002/pssc.201400002 |
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2014 |
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1468-1471 |
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<jats:title>Abstract</jats:title><jats:p>In order to clarify the origin of the previously reported reduction of sub‐band gap absorption of sputtered ZnO:Al films upon thermal annealing and raising deposition temperature, structural characterization using Ra‐man spectroscopy was carried out on various films. Correlation of the Urbach energy to the FWHM of the E<jats:sup>(high)</jats:sup><jats:sub>2</jats:sub> mode was found. Oxygen addition to the film growth did not result in changes of the Urbach energy, despite pronounced changes of the electrical properties. The results suggest that extended defects, rather than intrinsic point defects, give rise to the sub‐band gap absorption. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
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| author | Schönau, S., Ruske, F., Neubert, S., Rech, B. |
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| description | <jats:title>Abstract</jats:title><jats:p>In order to clarify the origin of the previously reported reduction of sub‐band gap absorption of sputtered ZnO:Al films upon thermal annealing and raising deposition temperature, structural characterization using Ra‐man spectroscopy was carried out on various films. Correlation of the Urbach energy to the FWHM of the E<jats:sup>(high)</jats:sup><jats:sub>2</jats:sub> mode was found. Oxygen addition to the film growth did not result in changes of the Urbach energy, despite pronounced changes of the electrical properties. The results suggest that extended defects, rather than intrinsic point defects, give rise to the sub‐band gap absorption. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
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| imprint_str_mv | Wiley, 2014 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| series | physica status solidi c |
| source_id | 49 |
| spelling | Schönau, S. Ruske, F. Neubert, S. Rech, B. 1862-6351 1610-1642 Wiley Condensed Matter Physics http://dx.doi.org/10.1002/pssc.201400002 <jats:title>Abstract</jats:title><jats:p>In order to clarify the origin of the previously reported reduction of sub‐band gap absorption of sputtered ZnO:Al films upon thermal annealing and raising deposition temperature, structural characterization using Ra‐man spectroscopy was carried out on various films. Correlation of the Urbach energy to the FWHM of the E<jats:sup>(high)</jats:sup><jats:sub>2</jats:sub> mode was found. Oxygen addition to the film growth did not result in changes of the Urbach energy, despite pronounced changes of the electrical properties. The results suggest that extended defects, rather than intrinsic point defects, give rise to the sub‐band gap absorption. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films physica status solidi c |
| spellingShingle | Schönau, S., Ruske, F., Neubert, S., Rech, B., physica status solidi c, Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films, Condensed Matter Physics |
| title | Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_full | Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_fullStr | Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_full_unstemmed | Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_short | Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| title_sort | annealing related changes in near‐edge absorption and structural properties of al‐doped zno thin films |
| title_unstemmed | Annealing related changes in near‐edge absorption and structural properties of Al‐doped ZnO thin films |
| topic | Condensed Matter Physics |
| url | http://dx.doi.org/10.1002/pssc.201400002 |