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A pixel design for X‐ray imaging with CdTe sensors
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| Zeitschriftentitel: | physica status solidi c |
|---|---|
| Personen und Körperschaften: | , , |
| In: | physica status solidi c, 5, 2008, 12, S. 3862-3864 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
|
| Schlagwörter: |
| author_facet |
Lambropoulos, C. P. Zervakis, E. G. Loukas, D. Lambropoulos, C. P. Zervakis, E. G. Loukas, D. |
|---|---|
| author |
Lambropoulos, C. P. Zervakis, E. G. Loukas, D. |
| spellingShingle |
Lambropoulos, C. P. Zervakis, E. G. Loukas, D. physica status solidi c A pixel design for X‐ray imaging with CdTe sensors Condensed Matter Physics |
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lambropoulos, c. p. |
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Lambropoulos, C. P. Zervakis, E. G. Loukas, D. 1862-6351 1610-1642 Wiley Condensed Matter Physics http://dx.doi.org/10.1002/pssc.200780171 <jats:title>Abstract</jats:title><jats:p>A readout architecture appropriate for X‐ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100 μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> A pixel design for X‐ray imaging with CdTe sensors physica status solidi c |
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2008 |
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physica status solidi c |
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| title |
A pixel design for X‐ray imaging with CdTe sensors |
| title_unstemmed |
A pixel design for X‐ray imaging with CdTe sensors |
| title_full |
A pixel design for X‐ray imaging with CdTe sensors |
| title_fullStr |
A pixel design for X‐ray imaging with CdTe sensors |
| title_full_unstemmed |
A pixel design for X‐ray imaging with CdTe sensors |
| title_short |
A pixel design for X‐ray imaging with CdTe sensors |
| title_sort |
a pixel design for x‐ray imaging with cdte sensors |
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Condensed Matter Physics |
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http://dx.doi.org/10.1002/pssc.200780171 |
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2008 |
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3862-3864 |
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<jats:title>Abstract</jats:title><jats:p>A readout architecture appropriate for X‐ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100 μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
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| author | Lambropoulos, C. P., Zervakis, E. G., Loukas, D. |
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| description | <jats:title>Abstract</jats:title><jats:p>A readout architecture appropriate for X‐ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100 μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
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| spelling | Lambropoulos, C. P. Zervakis, E. G. Loukas, D. 1862-6351 1610-1642 Wiley Condensed Matter Physics http://dx.doi.org/10.1002/pssc.200780171 <jats:title>Abstract</jats:title><jats:p>A readout architecture appropriate for X‐ray Imaging using charge integration has been designed. Each pixel consists of a capacitive transimpedance amplifier, a sample and hold circuit a comparator and an 8 bit DRAM. Pixel level A/D conversion and local storage of the digitized signal is performed. The target sensors are 100 μm x 100 μm CdTe pixel detectors and integration time of 1ms or less can be achieved. Special measures have been taken to minimize the gain fixed pattern noise and the reset noise, while purely digital correlation double sampling can be performed. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> A pixel design for X‐ray imaging with CdTe sensors physica status solidi c |
| spellingShingle | Lambropoulos, C. P., Zervakis, E. G., Loukas, D., physica status solidi c, A pixel design for X‐ray imaging with CdTe sensors, Condensed Matter Physics |
| title | A pixel design for X‐ray imaging with CdTe sensors |
| title_full | A pixel design for X‐ray imaging with CdTe sensors |
| title_fullStr | A pixel design for X‐ray imaging with CdTe sensors |
| title_full_unstemmed | A pixel design for X‐ray imaging with CdTe sensors |
| title_short | A pixel design for X‐ray imaging with CdTe sensors |
| title_sort | a pixel design for x‐ray imaging with cdte sensors |
| title_unstemmed | A pixel design for X‐ray imaging with CdTe sensors |
| topic | Condensed Matter Physics |
| url | http://dx.doi.org/10.1002/pssc.200780171 |