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THz time‐domain spectroscopy and IR spectroscopy on MoS2
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| Zeitschriftentitel: | physica status solidi (b) |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | physica status solidi (b), 253, 2016, 12, S. 2499-2504 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
Wiley
|
| Schlagwörter: |
| author_facet |
Arcos, David Gabriel, Daniel Dumcenco, Dumitru Kis, Andras Ferrer‐Anglada, Núria Arcos, David Gabriel, Daniel Dumcenco, Dumitru Kis, Andras Ferrer‐Anglada, Núria |
|---|---|
| author |
Arcos, David Gabriel, Daniel Dumcenco, Dumitru Kis, Andras Ferrer‐Anglada, Núria |
| spellingShingle |
Arcos, David Gabriel, Daniel Dumcenco, Dumitru Kis, Andras Ferrer‐Anglada, Núria physica status solidi (b) THz time‐domain spectroscopy and IR spectroscopy on MoS2 Condensed Matter Physics Electronic, Optical and Magnetic Materials |
| author_sort |
arcos, david |
| spelling |
Arcos, David Gabriel, Daniel Dumcenco, Dumitru Kis, Andras Ferrer‐Anglada, Núria 0370-1972 1521-3951 Wiley Condensed Matter Physics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1002/pssb.201600281 <jats:sec><jats:label /><jats:p>In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS<jats:sub>2</jats:sub> has attracted great interest due to the existence of a direct bandgap in monolayer MoS<jats:sub>2</jats:sub>, which gives the possibility of achieving MoS<jats:sub>2</jats:sub> field‐effect transistors or optoelectronic devices. We analyzed by THz time‐domain spectroscopy (THz‐TDS) up to 2 THz and infrared (IR) spectroscopy, CVD‐obtained MoS<jats:sub>2</jats:sub> using either S or H<jats:sub>2</jats:sub>S gas as a sulfur precursor, grown on a sapphire substrate. From THz‐TDS we obtained the transmittance, conductivity, and attenuation. From IR spectroscopy on the same samples, we deduced the transmittance in the IR frequency range. We observed the coherence of both spectroscopic methods. The advantage of the THz‐TDS method is that we can get significant parameters related to the sample quality without the need for depositing any electrical contact or sample preparation. Our results show that at high frequencies MoS<jats:sub>2</jats:sub> is even better than graphene as a material for optoelectronic devices.</jats:p></jats:sec> THz time‐domain spectroscopy and IR spectroscopy on MoS<sub>2</sub> physica status solidi (b) |
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10.1002/pssb.201600281 |
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Online |
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Technik Physik |
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Wiley, 2016 |
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physica status solidi (b) |
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| title |
THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_unstemmed |
THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_full |
THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_fullStr |
THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_full_unstemmed |
THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_short |
THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_sort |
thz time‐domain spectroscopy and ir spectroscopy on mos<sub>2</sub> |
| topic |
Condensed Matter Physics Electronic, Optical and Magnetic Materials |
| url |
http://dx.doi.org/10.1002/pssb.201600281 |
| publishDate |
2016 |
| physical |
2499-2504 |
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<jats:sec><jats:label /><jats:p>In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS<jats:sub>2</jats:sub> has attracted great interest due to the existence of a direct bandgap in monolayer MoS<jats:sub>2</jats:sub>, which gives the possibility of achieving MoS<jats:sub>2</jats:sub> field‐effect transistors or optoelectronic devices. We analyzed by THz time‐domain spectroscopy (THz‐TDS) up to 2 THz and infrared (IR) spectroscopy, CVD‐obtained MoS<jats:sub>2</jats:sub> using either S or H<jats:sub>2</jats:sub>S gas as a sulfur precursor, grown on a sapphire substrate. From THz‐TDS we obtained the transmittance, conductivity, and attenuation. From IR spectroscopy on the same samples, we deduced the transmittance in the IR frequency range. We observed the coherence of both spectroscopic methods. The advantage of the THz‐TDS method is that we can get significant parameters related to the sample quality without the need for depositing any electrical contact or sample preparation. Our results show that at high frequencies MoS<jats:sub>2</jats:sub> is even better than graphene as a material for optoelectronic devices.</jats:p></jats:sec> |
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| author | Arcos, David, Gabriel, Daniel, Dumcenco, Dumitru, Kis, Andras, Ferrer‐Anglada, Núria |
| author_facet | Arcos, David, Gabriel, Daniel, Dumcenco, Dumitru, Kis, Andras, Ferrer‐Anglada, Núria, Arcos, David, Gabriel, Daniel, Dumcenco, Dumitru, Kis, Andras, Ferrer‐Anglada, Núria |
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| description | <jats:sec><jats:label /><jats:p>In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS<jats:sub>2</jats:sub> has attracted great interest due to the existence of a direct bandgap in monolayer MoS<jats:sub>2</jats:sub>, which gives the possibility of achieving MoS<jats:sub>2</jats:sub> field‐effect transistors or optoelectronic devices. We analyzed by THz time‐domain spectroscopy (THz‐TDS) up to 2 THz and infrared (IR) spectroscopy, CVD‐obtained MoS<jats:sub>2</jats:sub> using either S or H<jats:sub>2</jats:sub>S gas as a sulfur precursor, grown on a sapphire substrate. From THz‐TDS we obtained the transmittance, conductivity, and attenuation. From IR spectroscopy on the same samples, we deduced the transmittance in the IR frequency range. We observed the coherence of both spectroscopic methods. The advantage of the THz‐TDS method is that we can get significant parameters related to the sample quality without the need for depositing any electrical contact or sample preparation. Our results show that at high frequencies MoS<jats:sub>2</jats:sub> is even better than graphene as a material for optoelectronic devices.</jats:p></jats:sec> |
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| imprint | Wiley, 2016 |
| imprint_str_mv | Wiley, 2016 |
| institution | DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3 |
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| spelling | Arcos, David Gabriel, Daniel Dumcenco, Dumitru Kis, Andras Ferrer‐Anglada, Núria 0370-1972 1521-3951 Wiley Condensed Matter Physics Electronic, Optical and Magnetic Materials http://dx.doi.org/10.1002/pssb.201600281 <jats:sec><jats:label /><jats:p>In the increasing research field of 2D materials such as graphene, molybdenum disulfide MoS<jats:sub>2</jats:sub> has attracted great interest due to the existence of a direct bandgap in monolayer MoS<jats:sub>2</jats:sub>, which gives the possibility of achieving MoS<jats:sub>2</jats:sub> field‐effect transistors or optoelectronic devices. We analyzed by THz time‐domain spectroscopy (THz‐TDS) up to 2 THz and infrared (IR) spectroscopy, CVD‐obtained MoS<jats:sub>2</jats:sub> using either S or H<jats:sub>2</jats:sub>S gas as a sulfur precursor, grown on a sapphire substrate. From THz‐TDS we obtained the transmittance, conductivity, and attenuation. From IR spectroscopy on the same samples, we deduced the transmittance in the IR frequency range. We observed the coherence of both spectroscopic methods. The advantage of the THz‐TDS method is that we can get significant parameters related to the sample quality without the need for depositing any electrical contact or sample preparation. Our results show that at high frequencies MoS<jats:sub>2</jats:sub> is even better than graphene as a material for optoelectronic devices.</jats:p></jats:sec> THz time‐domain spectroscopy and IR spectroscopy on MoS<sub>2</sub> physica status solidi (b) |
| spellingShingle | Arcos, David, Gabriel, Daniel, Dumcenco, Dumitru, Kis, Andras, Ferrer‐Anglada, Núria, physica status solidi (b), THz time‐domain spectroscopy and IR spectroscopy on MoS2, Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
| title | THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_full | THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_fullStr | THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_full_unstemmed | THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_short | THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| title_sort | thz time‐domain spectroscopy and ir spectroscopy on mos<sub>2</sub> |
| title_unstemmed | THz time‐domain spectroscopy and IR spectroscopy on MoS2 |
| topic | Condensed Matter Physics, Electronic, Optical and Magnetic Materials |
| url | http://dx.doi.org/10.1002/pssb.201600281 |