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Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching

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Zeitschriftentitel: APL Materials
Personen und Körperschaften: Kim, Younghoon, Bae, Changdeuck, Jung, Hyun Suk, Shin, Hyunjung
In: APL Materials, 7, 2019, 8
Format: E-Article
Sprache: Englisch
veröffentlicht:
AIP Publishing
Schlagwörter:
General Engineering
General Materials Science
author_facet Kim, Younghoon
Bae, Changdeuck
Jung, Hyun Suk
Shin, Hyunjung
Kim, Younghoon
Bae, Changdeuck
Jung, Hyun Suk
Shin, Hyunjung
author Kim, Younghoon
Bae, Changdeuck
Jung, Hyun Suk
Shin, Hyunjung
spellingShingle Kim, Younghoon
Bae, Changdeuck
Jung, Hyun Suk
Shin, Hyunjung
APL Materials
Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
General Engineering
General Materials Science
author_sort kim, younghoon
spelling Kim, Younghoon Bae, Changdeuck Jung, Hyun Suk Shin, Hyunjung 2166-532X AIP Publishing General Engineering General Materials Science http://dx.doi.org/10.1063/1.5109525 <jats:p>We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI3) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI3. Both the GAPbI3- and MAPbI3-based ReRAM devices showed bistable switching characteristics with a low operating voltage (&amp;lt;0.25 V) and high on/off ratio (∼106). Remarkably, we found that the GAPbI3-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI3, only 4 days). The GAPbI3 devices lasted for a larger number of cycles (&amp;gt;1900) in an endurance test and exhibited a longer data storage time (&amp;gt;3 × 104 s) in a retention test. Our results suggest that GAPbI3 has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.</jats:p> Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching APL Materials
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title Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_unstemmed Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_full Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_fullStr Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_full_unstemmed Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_short Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_sort enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
topic General Engineering
General Materials Science
url http://dx.doi.org/10.1063/1.5109525
publishDate 2019
physical
description <jats:p>We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI3) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI3. Both the GAPbI3- and MAPbI3-based ReRAM devices showed bistable switching characteristics with a low operating voltage (&amp;lt;0.25 V) and high on/off ratio (∼106). Remarkably, we found that the GAPbI3-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI3, only 4 days). The GAPbI3 devices lasted for a larger number of cycles (&amp;gt;1900) in an endurance test and exhibited a longer data storage time (&amp;gt;3 × 104 s) in a retention test. Our results suggest that GAPbI3 has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.</jats:p>
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author Kim, Younghoon, Bae, Changdeuck, Jung, Hyun Suk, Shin, Hyunjung
author_facet Kim, Younghoon, Bae, Changdeuck, Jung, Hyun Suk, Shin, Hyunjung, Kim, Younghoon, Bae, Changdeuck, Jung, Hyun Suk, Shin, Hyunjung
author_sort kim, younghoon
container_issue 8
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description <jats:p>We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI3) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI3. Both the GAPbI3- and MAPbI3-based ReRAM devices showed bistable switching characteristics with a low operating voltage (&amp;lt;0.25 V) and high on/off ratio (∼106). Remarkably, we found that the GAPbI3-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI3, only 4 days). The GAPbI3 devices lasted for a larger number of cycles (&amp;gt;1900) in an endurance test and exhibited a longer data storage time (&amp;gt;3 × 104 s) in a retention test. Our results suggest that GAPbI3 has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.</jats:p>
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spelling Kim, Younghoon Bae, Changdeuck Jung, Hyun Suk Shin, Hyunjung 2166-532X AIP Publishing General Engineering General Materials Science http://dx.doi.org/10.1063/1.5109525 <jats:p>We describe guanidinium-based organic-inorganic hybrid lead triiodides (GAPbI3) as an active layer in resistive switching structures and compare the switching results to those of the conventional compound, MAPbI3. Both the GAPbI3- and MAPbI3-based ReRAM devices showed bistable switching characteristics with a low operating voltage (&amp;lt;0.25 V) and high on/off ratio (∼106). Remarkably, we found that the GAPbI3-based devices exhibited prolonged switching behaviors for over 40 days under ambient conditions (MAPbI3, only 4 days). The GAPbI3 devices lasted for a larger number of cycles (&amp;gt;1900) in an endurance test and exhibited a longer data storage time (&amp;gt;3 × 104 s) in a retention test. Our results suggest that GAPbI3 has stronger hydrogen bonding in the lattice and thus the potential for application in memory devices.</jats:p> Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching APL Materials
spellingShingle Kim, Younghoon, Bae, Changdeuck, Jung, Hyun Suk, Shin, Hyunjung, APL Materials, Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching, General Engineering, General Materials Science
title Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_full Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_fullStr Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_full_unstemmed Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_short Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_sort enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
title_unstemmed Enhanced stability of guanidinium-based organic-inorganic hybrid lead triiodides in resistance switching
topic General Engineering, General Materials Science
url http://dx.doi.org/10.1063/1.5109525