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Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , , |
| In: | Applied Physics Letters, 101, 2012, 21 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
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| Schlagwörter: |
| author_facet |
Chen, G. Huang, E. K. Hoang, A. M. Bogdanov, S. Darvish, S. R. Razeghi, M. Chen, G. Huang, E. K. Hoang, A. M. Bogdanov, S. Darvish, S. R. Razeghi, M. |
|---|---|
| author |
Chen, G. Huang, E. K. Hoang, A. M. Bogdanov, S. Darvish, S. R. Razeghi, M. |
| spellingShingle |
Chen, G. Huang, E. K. Hoang, A. M. Bogdanov, S. Darvish, S. R. Razeghi, M. Applied Physics Letters Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors Physics and Astronomy (miscellaneous) |
| author_sort |
chen, g. |
| spelling |
Chen, G. Huang, E. K. Hoang, A. M. Bogdanov, S. Darvish, S. R. Razeghi, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4767905 <jats:p>By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias.</jats:p> Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors Applied Physics Letters |
| doi_str_mv |
10.1063/1.4767905 |
| facet_avail |
Online |
| finc_class_facet |
Physik |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ3Njc5MDU |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ3Njc5MDU |
| institution |
DE-15 DE-Pl11 DE-Rs1 DE-105 DE-14 DE-Ch1 DE-L229 DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 |
| imprint |
AIP Publishing, 2012 |
| imprint_str_mv |
AIP Publishing, 2012 |
| issn |
0003-6951 1077-3118 |
| issn_str_mv |
0003-6951 1077-3118 |
| language |
English |
| mega_collection |
AIP Publishing (CrossRef) |
| match_str |
chen2012surfaceleakageinvestigationviagatedtypeiiinasgasblongwavelengthinfraredphotodetectors |
| publishDateSort |
2012 |
| publisher |
AIP Publishing |
| recordtype |
ai |
| record_format |
ai |
| series |
Applied Physics Letters |
| source_id |
49 |
| title |
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_unstemmed |
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_full |
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_fullStr |
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_full_unstemmed |
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_short |
Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_sort |
surface leakage investigation via gated type-ii inas/gasb long-wavelength infrared photodetectors |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.4767905 |
| publishDate |
2012 |
| physical |
|
| description |
<jats:p>By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias.</jats:p> |
| container_issue |
21 |
| container_start_page |
0 |
| container_title |
Applied Physics Letters |
| container_volume |
101 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792342447965077514 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T16:35:42.968Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Surface+leakage+investigation+via+gated+type-II+InAs%2FGaSb+long-wavelength+infrared+photodetectors&rft.date=2012-11-19&genre=article&issn=1077-3118&volume=101&issue=21&jtitle=Applied+Physics+Letters&atitle=Surface+leakage+investigation+via+gated+type-II+InAs%2FGaSb+long-wavelength+infrared+photodetectors&aulast=Razeghi&aufirst=M.&rft_id=info%3Adoi%2F10.1063%2F1.4767905&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792342447965077514 |
| author | Chen, G., Huang, E. K., Hoang, A. M., Bogdanov, S., Darvish, S. R., Razeghi, M. |
| author_facet | Chen, G., Huang, E. K., Hoang, A. M., Bogdanov, S., Darvish, S. R., Razeghi, M., Chen, G., Huang, E. K., Hoang, A. M., Bogdanov, S., Darvish, S. R., Razeghi, M. |
| author_sort | chen, g. |
| container_issue | 21 |
| container_start_page | 0 |
| container_title | Applied Physics Letters |
| container_volume | 101 |
| description | <jats:p>By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias.</jats:p> |
| doi_str_mv | 10.1063/1.4767905 |
| facet_avail | Online |
| finc_class_facet | Physik |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ3Njc5MDU |
| imprint | AIP Publishing, 2012 |
| imprint_str_mv | AIP Publishing, 2012 |
| institution | DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4 |
| issn | 0003-6951, 1077-3118 |
| issn_str_mv | 0003-6951, 1077-3118 |
| language | English |
| last_indexed | 2024-03-01T16:35:42.968Z |
| match_str | chen2012surfaceleakageinvestigationviagatedtypeiiinasgasblongwavelengthinfraredphotodetectors |
| mega_collection | AIP Publishing (CrossRef) |
| physical | |
| publishDate | 2012 |
| publishDateSort | 2012 |
| publisher | AIP Publishing |
| record_format | ai |
| recordtype | ai |
| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Chen, G. Huang, E. K. Hoang, A. M. Bogdanov, S. Darvish, S. R. Razeghi, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4767905 <jats:p>By using gating technique, surface leakage generated by SiO2 passivation in long-wavelength infrared type-II superlattice photodetector is suppressed, and different surface leakage mechanisms are disclosed. By reducing the SiO2 passivation layer thickness, the saturated gated bias is reduced to −4.5 V. At 77 K, dark current densities of gated devices are reduced by more than 2 orders of magnitude, with 3071 Ω cm2 differential-resistance-area product at −100 mV. With quantum efficiency of 50%, the 11μm 50% cut-off gated photodiode has a specific detectivity of 7 × 1011 Jones, and the detectivity stays above 2 × 1011 Jones from 0 to −500 mV operation bias.</jats:p> Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors Applied Physics Letters |
| spellingShingle | Chen, G., Huang, E. K., Hoang, A. M., Bogdanov, S., Darvish, S. R., Razeghi, M., Applied Physics Letters, Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors, Physics and Astronomy (miscellaneous) |
| title | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_full | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_fullStr | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_full_unstemmed | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_short | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| title_sort | surface leakage investigation via gated type-ii inas/gasb long-wavelength infrared photodetectors |
| title_unstemmed | Surface leakage investigation via gated type-II InAs/GaSb long-wavelength infrared photodetectors |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.4767905 |