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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
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Journal Title: | Applied Physics Letters |
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Authors and Corporations: | , , , , , , , |
In: | Applied Physics Letters, 101, 2012, 4, p. 041115 |
Type of Resource: | E-Article |
Language: | English |
published: |
AIP Publishing
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Subjects: |