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Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , , , , |
| In: | Applied Physics Letters, 101, 2012, 4, S. 041115 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Li, X. Okur, S. Zhang, F. Hafiz, S. A. Avrutin, V. Özgür, Ü. Morkoç, H. Jarašiūnas, K. Li, X. Okur, S. Zhang, F. Hafiz, S. A. Avrutin, V. Özgür, Ü. Morkoç, H. Jarašiūnas, K. |
|---|---|
| author |
Li, X. Okur, S. Zhang, F. Hafiz, S. A. Avrutin, V. Özgür, Ü. Morkoç, H. Jarašiūnas, K. |
| spellingShingle |
Li, X. Okur, S. Zhang, F. Hafiz, S. A. Avrutin, V. Özgür, Ü. Morkoç, H. Jarašiūnas, K. Applied Physics Letters Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions Physics and Astronomy (miscellaneous) |
| author_sort |
li, x. |
| spelling |
Li, X. Okur, S. Zhang, F. Hafiz, S. A. Avrutin, V. Özgür, Ü. Morkoç, H. Jarašiūnas, K. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4739419 Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions Applied Physics Letters |
| doi_str_mv |
10.1063/1.4739419 |
| facet_avail |
Online |
| finc_class_facet |
Physik |
| format |
ElectronicArticle |
| fullrecord |
blob:ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ3Mzk0MTk |
| id |
ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ3Mzk0MTk |
| institution |
DE-D275 DE-Bn3 DE-Brt1 DE-D161 DE-Gla1 DE-Zi4 DE-15 DE-Rs1 DE-Pl11 DE-105 DE-14 DE-Ch1 DE-L229 |
| imprint |
AIP Publishing, 2012 |
| imprint_str_mv |
AIP Publishing, 2012 |
| issn |
0003-6951 1077-3118 |
| issn_str_mv |
0003-6951 1077-3118 |
| language |
English |
| mega_collection |
AIP Publishing (CrossRef) |
| match_str |
li2012improvedquantumefficiencyininganlightemittingdiodeswithmultidoubleheterostructureactiveregions |
| publishDateSort |
2012 |
| publisher |
AIP Publishing |
| recordtype |
ai |
| record_format |
ai |
| series |
Applied Physics Letters |
| source_id |
49 |
| title |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_unstemmed |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_full |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_fullStr |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_full_unstemmed |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_short |
Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_sort |
improved quantum efficiency in ingan light emitting diodes with multi-double-heterostructure active regions |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.4739419 |
| publishDate |
2012 |
| physical |
041115 |
| description |
|
| container_issue |
4 |
| container_start_page |
0 |
| container_title |
Applied Physics Letters |
| container_volume |
101 |
| format_de105 |
Article, E-Article |
| format_de14 |
Article, E-Article |
| format_de15 |
Article, E-Article |
| format_de520 |
Article, E-Article |
| format_de540 |
Article, E-Article |
| format_dech1 |
Article, E-Article |
| format_ded117 |
Article, E-Article |
| format_degla1 |
E-Article |
| format_del152 |
Buch |
| format_del189 |
Article, E-Article |
| format_dezi4 |
Article |
| format_dezwi2 |
Article, E-Article |
| format_finc |
Article, E-Article |
| format_nrw |
Article, E-Article |
| _version_ |
1792332247619076099 |
| geogr_code |
not assigned |
| last_indexed |
2024-03-01T13:53:50.591Z |
| geogr_code_person |
not assigned |
| openURL |
url_ver=Z39.88-2004&ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fvufind.svn.sourceforge.net%3Agenerator&rft.title=Improved+quantum+efficiency+in+InGaN+light+emitting+diodes+with+multi-double-heterostructure+active+regions&rft.date=2012-07-23&genre=article&issn=1077-3118&volume=101&issue=4&pages=041115&jtitle=Applied+Physics+Letters&atitle=Improved+quantum+efficiency+in+InGaN+light+emitting+diodes+with+multi-double-heterostructure+active+regions&aulast=Jara%C5%A1i%C5%ABnas&aufirst=K.&rft_id=info%3Adoi%2F10.1063%2F1.4739419&rft.language%5B0%5D=eng |
| SOLR | |
| _version_ | 1792332247619076099 |
| author | Li, X., Okur, S., Zhang, F., Hafiz, S. A., Avrutin, V., Özgür, Ü., Morkoç, H., Jarašiūnas, K. |
| author_facet | Li, X., Okur, S., Zhang, F., Hafiz, S. A., Avrutin, V., Özgür, Ü., Morkoç, H., Jarašiūnas, K., Li, X., Okur, S., Zhang, F., Hafiz, S. A., Avrutin, V., Özgür, Ü., Morkoç, H., Jarašiūnas, K. |
| author_sort | li, x. |
| container_issue | 4 |
| container_start_page | 0 |
| container_title | Applied Physics Letters |
| container_volume | 101 |
| description | |
| doi_str_mv | 10.1063/1.4739419 |
| facet_avail | Online |
| finc_class_facet | Physik |
| format | ElectronicArticle |
| format_de105 | Article, E-Article |
| format_de14 | Article, E-Article |
| format_de15 | Article, E-Article |
| format_de520 | Article, E-Article |
| format_de540 | Article, E-Article |
| format_dech1 | Article, E-Article |
| format_ded117 | Article, E-Article |
| format_degla1 | E-Article |
| format_del152 | Buch |
| format_del189 | Article, E-Article |
| format_dezi4 | Article |
| format_dezwi2 | Article, E-Article |
| format_finc | Article, E-Article |
| format_nrw | Article, E-Article |
| geogr_code | not assigned |
| geogr_code_person | not assigned |
| id | ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjQ3Mzk0MTk |
| imprint | AIP Publishing, 2012 |
| imprint_str_mv | AIP Publishing, 2012 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Rs1, DE-Pl11, DE-105, DE-14, DE-Ch1, DE-L229 |
| issn | 0003-6951, 1077-3118 |
| issn_str_mv | 0003-6951, 1077-3118 |
| language | English |
| last_indexed | 2024-03-01T13:53:50.591Z |
| match_str | li2012improvedquantumefficiencyininganlightemittingdiodeswithmultidoubleheterostructureactiveregions |
| mega_collection | AIP Publishing (CrossRef) |
| physical | 041115 |
| publishDate | 2012 |
| publishDateSort | 2012 |
| publisher | AIP Publishing |
| record_format | ai |
| recordtype | ai |
| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Li, X. Okur, S. Zhang, F. Hafiz, S. A. Avrutin, V. Özgür, Ü. Morkoç, H. Jarašiūnas, K. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4739419 Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions Applied Physics Letters |
| spellingShingle | Li, X., Okur, S., Zhang, F., Hafiz, S. A., Avrutin, V., Özgür, Ü., Morkoç, H., Jarašiūnas, K., Applied Physics Letters, Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions, Physics and Astronomy (miscellaneous) |
| title | Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_full | Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_fullStr | Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_full_unstemmed | Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_short | Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| title_sort | improved quantum efficiency in ingan light emitting diodes with multi-double-heterostructure active regions |
| title_unstemmed | Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.4739419 |