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Ge atom distribution in buried dome islands
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | Applied Physics Letters, 100, 2012, 16 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Portavoce, A. Hoummada, K. Berbezier, I. Ronda, A. Mangelinck, D. Portavoce, A. Hoummada, K. Berbezier, I. Ronda, A. Mangelinck, D. |
|---|---|
| author |
Portavoce, A. Hoummada, K. Berbezier, I. Ronda, A. Mangelinck, D. |
| spellingShingle |
Portavoce, A. Hoummada, K. Berbezier, I. Ronda, A. Mangelinck, D. Applied Physics Letters Ge atom distribution in buried dome islands Physics and Astronomy (miscellaneous) |
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portavoce, a. |
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Portavoce, A. Hoummada, K. Berbezier, I. Ronda, A. Mangelinck, D. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4704150 <jats:p>Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {113} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.</jats:p> Ge atom distribution in buried dome islands Applied Physics Letters |
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Ge atom distribution in buried dome islands |
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Ge atom distribution in buried dome islands |
| title_full |
Ge atom distribution in buried dome islands |
| title_fullStr |
Ge atom distribution in buried dome islands |
| title_full_unstemmed |
Ge atom distribution in buried dome islands |
| title_short |
Ge atom distribution in buried dome islands |
| title_sort |
ge atom distribution in buried dome islands |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.4704150 |
| publishDate |
2012 |
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|
| description |
<jats:p>Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {113} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.</jats:p> |
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| author | Portavoce, A., Hoummada, K., Berbezier, I., Ronda, A., Mangelinck, D. |
| author_facet | Portavoce, A., Hoummada, K., Berbezier, I., Ronda, A., Mangelinck, D., Portavoce, A., Hoummada, K., Berbezier, I., Ronda, A., Mangelinck, D. |
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| description | <jats:p>Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {113} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.</jats:p> |
| doi_str_mv | 10.1063/1.4704150 |
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| imprint | AIP Publishing, 2012 |
| imprint_str_mv | AIP Publishing, 2012 |
| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| spelling | Portavoce, A. Hoummada, K. Berbezier, I. Ronda, A. Mangelinck, D. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.4704150 <jats:p>Laser-assisted atom probe tomography microscopy is used to provide direct and quantitative compositional measurements of tri-dimensional Ge distribution in Ge dome islands buried by Si. Sub-nanometer spatial resolution 3D imaging shows that islands keep their facets after deposition of the Si cap, and that the island/substrate/Si cap interfaces are abrupt. The core of the domes contains 55% of Ge, while the island shell exhibits a constant composition of 15% of Ge. The {113} facets of the islands present a Ge enrichment up to 35%. The wetting layer composition is not homogeneous, varying from 9.5% to 30% of Ge.</jats:p> Ge atom distribution in buried dome islands Applied Physics Letters |
| spellingShingle | Portavoce, A., Hoummada, K., Berbezier, I., Ronda, A., Mangelinck, D., Applied Physics Letters, Ge atom distribution in buried dome islands, Physics and Astronomy (miscellaneous) |
| title | Ge atom distribution in buried dome islands |
| title_full | Ge atom distribution in buried dome islands |
| title_fullStr | Ge atom distribution in buried dome islands |
| title_full_unstemmed | Ge atom distribution in buried dome islands |
| title_short | Ge atom distribution in buried dome islands |
| title_sort | ge atom distribution in buried dome islands |
| title_unstemmed | Ge atom distribution in buried dome islands |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.4704150 |