author_facet Leach, J. H.
Liu, H.
Avrutin, V.
Xiao, B.
Özgür, Ü.
Morkoç, H.
Das, J.
Song, Y. Y.
Patton, C. E.
Leach, J. H.
Liu, H.
Avrutin, V.
Xiao, B.
Özgür, Ü.
Morkoç, H.
Das, J.
Song, Y. Y.
Patton, C. E.
author Leach, J. H.
Liu, H.
Avrutin, V.
Xiao, B.
Özgür, Ü.
Morkoç, H.
Das, J.
Song, Y. Y.
Patton, C. E.
spellingShingle Leach, J. H.
Liu, H.
Avrutin, V.
Xiao, B.
Özgür, Ü.
Morkoç, H.
Das, J.
Song, Y. Y.
Patton, C. E.
Journal of Applied Physics
Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
General Physics and Astronomy
author_sort leach, j. h.
spelling Leach, J. H. Liu, H. Avrutin, V. Xiao, B. Özgür, Ü. Morkoç, H. Das, J. Song, Y. Y. Patton, C. E. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.3359707 <jats:p>Dielectric properties of annealed and as-grown ferroelectric Ba0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis of the loss in the BST results in a measured tan δ of 0.02 for the annealed as well as the unannealed films at a frequency of 18 GHz. Phase shifters also exhibited high tuning with differential phase shift figures of merit of 35 and 55°/dB at a field of 60 kV/cm at 10 and 19 GHz, respectively. Serendipitously, most of the tuning occurs at low fields, and thus we propose a new figure of merit, taking into account the amplitude of applied electric field in order to achieve the phase shift. In this new realm we achieved the values of this overall figure of merit of 1.2 and 1.8° cm/dB kV at 10 and 19 GHz, respectively, using an applied electric field of only 10 kV/cm.</jats:p> Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3 Journal of Applied Physics
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publishDateSort 2010
publisher AIP Publishing
recordtype ai
record_format ai
series Journal of Applied Physics
source_id 49
title Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_unstemmed Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_full Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_fullStr Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_full_unstemmed Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_short Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_sort large dielectric tuning and microwave phase shift at low electric field in epitaxial ba0.5sr0.5tio3 on srtio3
topic General Physics and Astronomy
url http://dx.doi.org/10.1063/1.3359707
publishDate 2010
physical
description <jats:p>Dielectric properties of annealed and as-grown ferroelectric Ba0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis of the loss in the BST results in a measured tan δ of 0.02 for the annealed as well as the unannealed films at a frequency of 18 GHz. Phase shifters also exhibited high tuning with differential phase shift figures of merit of 35 and 55°/dB at a field of 60 kV/cm at 10 and 19 GHz, respectively. Serendipitously, most of the tuning occurs at low fields, and thus we propose a new figure of merit, taking into account the amplitude of applied electric field in order to achieve the phase shift. In this new realm we achieved the values of this overall figure of merit of 1.2 and 1.8° cm/dB kV at 10 and 19 GHz, respectively, using an applied electric field of only 10 kV/cm.</jats:p>
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author Leach, J. H., Liu, H., Avrutin, V., Xiao, B., Özgür, Ü., Morkoç, H., Das, J., Song, Y. Y., Patton, C. E.
author_facet Leach, J. H., Liu, H., Avrutin, V., Xiao, B., Özgür, Ü., Morkoç, H., Das, J., Song, Y. Y., Patton, C. E., Leach, J. H., Liu, H., Avrutin, V., Xiao, B., Özgür, Ü., Morkoç, H., Das, J., Song, Y. Y., Patton, C. E.
author_sort leach, j. h.
container_issue 8
container_start_page 0
container_title Journal of Applied Physics
container_volume 107
description <jats:p>Dielectric properties of annealed and as-grown ferroelectric Ba0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis of the loss in the BST results in a measured tan δ of 0.02 for the annealed as well as the unannealed films at a frequency of 18 GHz. Phase shifters also exhibited high tuning with differential phase shift figures of merit of 35 and 55°/dB at a field of 60 kV/cm at 10 and 19 GHz, respectively. Serendipitously, most of the tuning occurs at low fields, and thus we propose a new figure of merit, taking into account the amplitude of applied electric field in order to achieve the phase shift. In this new realm we achieved the values of this overall figure of merit of 1.2 and 1.8° cm/dB kV at 10 and 19 GHz, respectively, using an applied electric field of only 10 kV/cm.</jats:p>
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imprint AIP Publishing, 2010
imprint_str_mv AIP Publishing, 2010
institution DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1
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spelling Leach, J. H. Liu, H. Avrutin, V. Xiao, B. Özgür, Ü. Morkoç, H. Das, J. Song, Y. Y. Patton, C. E. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.3359707 <jats:p>Dielectric properties of annealed and as-grown ferroelectric Ba0.5Sr0.5TiO3 (BST) grown by pulsed laser deposition on sputtered BST seed layers on strontium titanate (STO) substrates were investigated at microwave frequencies in the realm of tunability of its dielectric constant as well as phase shifters based on this material. The as-grown layers were nearly fully relaxed with measured lattice parameters nearly identical to those of bulk BST. The tuning of the relative dielectric constant (∼1750 at zero bias at 10 GHz) of the annealed BST was found to be as high as 59% and 56% at 10 and 19 GHz, respectively. The analysis of the loss in the BST results in a measured tan δ of 0.02 for the annealed as well as the unannealed films at a frequency of 18 GHz. Phase shifters also exhibited high tuning with differential phase shift figures of merit of 35 and 55°/dB at a field of 60 kV/cm at 10 and 19 GHz, respectively. Serendipitously, most of the tuning occurs at low fields, and thus we propose a new figure of merit, taking into account the amplitude of applied electric field in order to achieve the phase shift. In this new realm we achieved the values of this overall figure of merit of 1.2 and 1.8° cm/dB kV at 10 and 19 GHz, respectively, using an applied electric field of only 10 kV/cm.</jats:p> Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3 Journal of Applied Physics
spellingShingle Leach, J. H., Liu, H., Avrutin, V., Xiao, B., Özgür, Ü., Morkoç, H., Das, J., Song, Y. Y., Patton, C. E., Journal of Applied Physics, Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3, General Physics and Astronomy
title Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_full Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_fullStr Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_full_unstemmed Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_short Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
title_sort large dielectric tuning and microwave phase shift at low electric field in epitaxial ba0.5sr0.5tio3 on srtio3
title_unstemmed Large dielectric tuning and microwave phase shift at low electric field in epitaxial Ba0.5Sr0.5TiO3 on SrTiO3
topic General Physics and Astronomy
url http://dx.doi.org/10.1063/1.3359707