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Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , |
| In: | Journal of Applied Physics, 50, 1979, 11, S. 6938-6941 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Bettini, M. Brandt, G. Bettini, M. Brandt, G. |
|---|---|
| author |
Bettini, M. Brandt, G. |
| spellingShingle |
Bettini, M. Brandt, G. Journal of Applied Physics Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces General Physics and Astronomy |
| author_sort |
bettini, m. |
| spelling |
Bettini, M. Brandt, G. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.325847 <jats:p>Epitaxial double layers of CdS and CdTe have been grown on GaAs by close-spaced chemical vapor transport, to study the growth of CdTe on various CdS surfaces. Since the [00.1] axis of CdS aligns to one of the 〈111〉A axes of the GaAs substrate, the deposition of CdS on {111̄}A, {110}, and {100} GaAs surfaces yields approximately the {00.1}, {10.3}, and {11̄.1} CdS surfaces. On {111̄}A and slightly inclined substrates the CdS-CdTe layers (2–10 μm thick) grow uniformly thick with smooth surfaces. On the {110} and {100} faces the CdTe layers show a scale structure through the whole layer, which is approximately aligned to one of the 〈111〉 axes of the substrate. X-ray investigations reveal three- and two-dimensional lattice defects in the CdTe layer such as twinning, cubic-hexagonal mixture, stacking faults, fiber texture, and polycrystallinity. The number of defects increases in layers grown on {111̄}A to {110} and to {100}. The most perfect layers on {111}A faces and slightly inclined ones have a cubic structure with twinning about the growth direction. On {110} and {100} faces, the [00.1] and [111̄] stacking axes of the three lattices are slightly tilted to each other. The tilt angle can be explained by an accommodation of the lattice mismatch at the interface in such a way that the stacking planes join together continuously at the boundaries.</jats:p> Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces Journal of Applied Physics |
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Journal of Applied Physics |
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| title |
Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_unstemmed |
Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_full |
Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_fullStr |
Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_full_unstemmed |
Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_short |
Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_sort |
morphology and crystallography of cds-cdte double layers on various gaas surfaces |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.325847 |
| publishDate |
1979 |
| physical |
6938-6941 |
| description |
<jats:p>Epitaxial double layers of CdS and CdTe have been grown on GaAs by close-spaced chemical vapor transport, to study the growth of CdTe on various CdS surfaces. Since the [00.1] axis of CdS aligns to one of the 〈111〉A axes of the GaAs substrate, the deposition of CdS on {111̄}A, {110}, and {100} GaAs surfaces yields approximately the {00.1}, {10.3}, and {11̄.1} CdS surfaces. On {111̄}A and slightly inclined substrates the CdS-CdTe layers (2–10 μm thick) grow uniformly thick with smooth surfaces. On the {110} and {100} faces the CdTe layers show a scale structure through the whole layer, which is approximately aligned to one of the 〈111〉 axes of the substrate. X-ray investigations reveal three- and two-dimensional lattice defects in the CdTe layer such as twinning, cubic-hexagonal mixture, stacking faults, fiber texture, and polycrystallinity. The number of defects increases in layers grown on {111̄}A to {110} and to {100}. The most perfect layers on {111}A faces and slightly inclined ones have a cubic structure with twinning about the growth direction. On {110} and {100} faces, the [00.1] and [111̄] stacking axes of the three lattices are slightly tilted to each other. The tilt angle can be explained by an accommodation of the lattice mismatch at the interface in such a way that the stacking planes join together continuously at the boundaries.</jats:p> |
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| description | <jats:p>Epitaxial double layers of CdS and CdTe have been grown on GaAs by close-spaced chemical vapor transport, to study the growth of CdTe on various CdS surfaces. Since the [00.1] axis of CdS aligns to one of the 〈111〉A axes of the GaAs substrate, the deposition of CdS on {111̄}A, {110}, and {100} GaAs surfaces yields approximately the {00.1}, {10.3}, and {11̄.1} CdS surfaces. On {111̄}A and slightly inclined substrates the CdS-CdTe layers (2–10 μm thick) grow uniformly thick with smooth surfaces. On the {110} and {100} faces the CdTe layers show a scale structure through the whole layer, which is approximately aligned to one of the 〈111〉 axes of the substrate. X-ray investigations reveal three- and two-dimensional lattice defects in the CdTe layer such as twinning, cubic-hexagonal mixture, stacking faults, fiber texture, and polycrystallinity. The number of defects increases in layers grown on {111̄}A to {110} and to {100}. The most perfect layers on {111}A faces and slightly inclined ones have a cubic structure with twinning about the growth direction. On {110} and {100} faces, the [00.1] and [111̄] stacking axes of the three lattices are slightly tilted to each other. The tilt angle can be explained by an accommodation of the lattice mismatch at the interface in such a way that the stacking planes join together continuously at the boundaries.</jats:p> |
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| institution | DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229 |
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| spelling | Bettini, M. Brandt, G. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.325847 <jats:p>Epitaxial double layers of CdS and CdTe have been grown on GaAs by close-spaced chemical vapor transport, to study the growth of CdTe on various CdS surfaces. Since the [00.1] axis of CdS aligns to one of the 〈111〉A axes of the GaAs substrate, the deposition of CdS on {111̄}A, {110}, and {100} GaAs surfaces yields approximately the {00.1}, {10.3}, and {11̄.1} CdS surfaces. On {111̄}A and slightly inclined substrates the CdS-CdTe layers (2–10 μm thick) grow uniformly thick with smooth surfaces. On the {110} and {100} faces the CdTe layers show a scale structure through the whole layer, which is approximately aligned to one of the 〈111〉 axes of the substrate. X-ray investigations reveal three- and two-dimensional lattice defects in the CdTe layer such as twinning, cubic-hexagonal mixture, stacking faults, fiber texture, and polycrystallinity. The number of defects increases in layers grown on {111̄}A to {110} and to {100}. The most perfect layers on {111}A faces and slightly inclined ones have a cubic structure with twinning about the growth direction. On {110} and {100} faces, the [00.1] and [111̄] stacking axes of the three lattices are slightly tilted to each other. The tilt angle can be explained by an accommodation of the lattice mismatch at the interface in such a way that the stacking planes join together continuously at the boundaries.</jats:p> Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces Journal of Applied Physics |
| spellingShingle | Bettini, M., Brandt, G., Journal of Applied Physics, Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces, General Physics and Astronomy |
| title | Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_full | Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_fullStr | Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_full_unstemmed | Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_short | Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| title_sort | morphology and crystallography of cds-cdte double layers on various gaas surfaces |
| title_unstemmed | Morphology and crystallography of CdS-CdTe double layers on various GaAs surfaces |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.325847 |