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Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , , |
| In: | Journal of Applied Physics, 87, 2000, 9, S. 4315-4318 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Behn, U. Thamm, A. Brandt, O. Grahn, H. T. Behn, U. Thamm, A. Brandt, O. Grahn, H. T. |
|---|---|
| author |
Behn, U. Thamm, A. Brandt, O. Grahn, H. T. |
| spellingShingle |
Behn, U. Thamm, A. Brandt, O. Grahn, H. T. Journal of Applied Physics Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy General Physics and Astronomy |
| author_sort |
behn, u. |
| spelling |
Behn, U. Thamm, A. Brandt, O. Grahn, H. T. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.373071 <jats:p>The photoreflectance signal from GaN films is sensitive to the ambient medium. A large decrease in the photoreflectance amplitude is observed, when the ambient medium is changed from air to vacuum. This effect is attributed to ultraviolet-light-induced desorption of oxygen from the sample surface leading to a reduction of the surface barrier height. The effect is absent, when a thin Ti layer is deposited on top of the GaN film. A simple model is used to demonstrate that the surface photovoltage can be strongly reduced with a decrease of the surface barrier height.</jats:p> Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy Journal of Applied Physics |
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Journal of Applied Physics |
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| title |
Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_unstemmed |
Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_full |
Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_fullStr |
Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_full_unstemmed |
Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_short |
Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_sort |
unpinned behavior of the surface fermi level of gan detected by photoreflectance spectroscopy |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.373071 |
| publishDate |
2000 |
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4315-4318 |
| description |
<jats:p>The photoreflectance signal from GaN films is sensitive to the ambient medium. A large decrease in the photoreflectance amplitude is observed, when the ambient medium is changed from air to vacuum. This effect is attributed to ultraviolet-light-induced desorption of oxygen from the sample surface leading to a reduction of the surface barrier height. The effect is absent, when a thin Ti layer is deposited on top of the GaN film. A simple model is used to demonstrate that the surface photovoltage can be strongly reduced with a decrease of the surface barrier height.</jats:p> |
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| author | Behn, U., Thamm, A., Brandt, O., Grahn, H. T. |
| author_facet | Behn, U., Thamm, A., Brandt, O., Grahn, H. T., Behn, U., Thamm, A., Brandt, O., Grahn, H. T. |
| author_sort | behn, u. |
| container_issue | 9 |
| container_start_page | 4315 |
| container_title | Journal of Applied Physics |
| container_volume | 87 |
| description | <jats:p>The photoreflectance signal from GaN films is sensitive to the ambient medium. A large decrease in the photoreflectance amplitude is observed, when the ambient medium is changed from air to vacuum. This effect is attributed to ultraviolet-light-induced desorption of oxygen from the sample surface leading to a reduction of the surface barrier height. The effect is absent, when a thin Ti layer is deposited on top of the GaN film. A simple model is used to demonstrate that the surface photovoltage can be strongly reduced with a decrease of the surface barrier height.</jats:p> |
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| imprint_str_mv | AIP Publishing, 2000 |
| institution | DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15 |
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| series | Journal of Applied Physics |
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| spelling | Behn, U. Thamm, A. Brandt, O. Grahn, H. T. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.373071 <jats:p>The photoreflectance signal from GaN films is sensitive to the ambient medium. A large decrease in the photoreflectance amplitude is observed, when the ambient medium is changed from air to vacuum. This effect is attributed to ultraviolet-light-induced desorption of oxygen from the sample surface leading to a reduction of the surface barrier height. The effect is absent, when a thin Ti layer is deposited on top of the GaN film. A simple model is used to demonstrate that the surface photovoltage can be strongly reduced with a decrease of the surface barrier height.</jats:p> Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy Journal of Applied Physics |
| spellingShingle | Behn, U., Thamm, A., Brandt, O., Grahn, H. T., Journal of Applied Physics, Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy, General Physics and Astronomy |
| title | Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_full | Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_fullStr | Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_full_unstemmed | Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_short | Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| title_sort | unpinned behavior of the surface fermi level of gan detected by photoreflectance spectroscopy |
| title_unstemmed | Unpinned behavior of the surface Fermi level of GaN detected by photoreflectance spectroscopy |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.373071 |