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Hexagonal-based pyramid void defects in GaN and InGaN
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , , , , , , , , |
| In: | Journal of Applied Physics, 111, 2012, 2 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
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| Schlagwörter: |
| author_facet |
Yankovich, A. B. Kvit, A. V. Li, X. Zhang, F. Avrutin, V. Liu, H. Y. Izyumskaya, N. Özgür, Ü. Morkoç, H. Voyles, P. M. Yankovich, A. B. Kvit, A. V. Li, X. Zhang, F. Avrutin, V. Liu, H. Y. Izyumskaya, N. Özgür, Ü. Morkoç, H. Voyles, P. M. |
|---|---|
| author |
Yankovich, A. B. Kvit, A. V. Li, X. Zhang, F. Avrutin, V. Liu, H. Y. Izyumskaya, N. Özgür, Ü. Morkoç, H. Voyles, P. M. |
| spellingShingle |
Yankovich, A. B. Kvit, A. V. Li, X. Zhang, F. Avrutin, V. Liu, H. Y. Izyumskaya, N. Özgür, Ü. Morkoç, H. Voyles, P. M. Journal of Applied Physics Hexagonal-based pyramid void defects in GaN and InGaN General Physics and Astronomy |
| author_sort |
yankovich, a. b. |
| spelling |
Yankovich, A. B. Kvit, A. V. Li, X. Zhang, F. Avrutin, V. Liu, H. Y. Izyumskaya, N. Özgür, Ü. Morkoç, H. Voyles, P. M. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.3679540 <jats:p>We report a void defect in gallium nitride (GaN) and InGaN, revealed by aberration-corrected scanning transmission electron microscopy (STEM). The voids are pyramids with symmetric hexagonal {0001} base facets and {101¯1} side facets. Each pyramid void has a dislocation at the peak of the pyramid, which continues up along the [0001] growth direction to the surface. Some of the dislocations are hexagonal open core screw dislocations with {101¯0} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging showed a large C concentration inside the void and on the void surfaces. There is also a larger C concentration in the GaN (or InGaN) below the void than above the void. We propose that inadvertent carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally, which in combination with lateral overgrowth, creates a void. Subsequent layers of GaN deposited around the C covered region create the overhanging {101¯1} facets, and the meeting of the six {101¯1} facets at the pyramid’s peak is not perfect, resulting in a dislocation.</jats:p> Hexagonal-based pyramid void defects in GaN and InGaN Journal of Applied Physics |
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| title |
Hexagonal-based pyramid void defects in GaN and InGaN |
| title_unstemmed |
Hexagonal-based pyramid void defects in GaN and InGaN |
| title_full |
Hexagonal-based pyramid void defects in GaN and InGaN |
| title_fullStr |
Hexagonal-based pyramid void defects in GaN and InGaN |
| title_full_unstemmed |
Hexagonal-based pyramid void defects in GaN and InGaN |
| title_short |
Hexagonal-based pyramid void defects in GaN and InGaN |
| title_sort |
hexagonal-based pyramid void defects in gan and ingan |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.3679540 |
| publishDate |
2012 |
| physical |
|
| description |
<jats:p>We report a void defect in gallium nitride (GaN) and InGaN, revealed by aberration-corrected scanning transmission electron microscopy (STEM). The voids are pyramids with symmetric hexagonal {0001} base facets and {101¯1} side facets. Each pyramid void has a dislocation at the peak of the pyramid, which continues up along the [0001] growth direction to the surface. Some of the dislocations are hexagonal open core screw dislocations with {101¯0} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging showed a large C concentration inside the void and on the void surfaces. There is also a larger C concentration in the GaN (or InGaN) below the void than above the void. We propose that inadvertent carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally, which in combination with lateral overgrowth, creates a void. Subsequent layers of GaN deposited around the C covered region create the overhanging {101¯1} facets, and the meeting of the six {101¯1} facets at the pyramid’s peak is not perfect, resulting in a dislocation.</jats:p> |
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| author | Yankovich, A. B., Kvit, A. V., Li, X., Zhang, F., Avrutin, V., Liu, H. Y., Izyumskaya, N., Özgür, Ü., Morkoç, H., Voyles, P. M. |
| author_facet | Yankovich, A. B., Kvit, A. V., Li, X., Zhang, F., Avrutin, V., Liu, H. Y., Izyumskaya, N., Özgür, Ü., Morkoç, H., Voyles, P. M., Yankovich, A. B., Kvit, A. V., Li, X., Zhang, F., Avrutin, V., Liu, H. Y., Izyumskaya, N., Özgür, Ü., Morkoç, H., Voyles, P. M. |
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| description | <jats:p>We report a void defect in gallium nitride (GaN) and InGaN, revealed by aberration-corrected scanning transmission electron microscopy (STEM). The voids are pyramids with symmetric hexagonal {0001} base facets and {101¯1} side facets. Each pyramid void has a dislocation at the peak of the pyramid, which continues up along the [0001] growth direction to the surface. Some of the dislocations are hexagonal open core screw dislocations with {101¯0} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging showed a large C concentration inside the void and on the void surfaces. There is also a larger C concentration in the GaN (or InGaN) below the void than above the void. We propose that inadvertent carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally, which in combination with lateral overgrowth, creates a void. Subsequent layers of GaN deposited around the C covered region create the overhanging {101¯1} facets, and the meeting of the six {101¯1} facets at the pyramid’s peak is not perfect, resulting in a dislocation.</jats:p> |
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| spelling | Yankovich, A. B. Kvit, A. V. Li, X. Zhang, F. Avrutin, V. Liu, H. Y. Izyumskaya, N. Özgür, Ü. Morkoç, H. Voyles, P. M. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.3679540 <jats:p>We report a void defect in gallium nitride (GaN) and InGaN, revealed by aberration-corrected scanning transmission electron microscopy (STEM). The voids are pyramids with symmetric hexagonal {0001} base facets and {101¯1} side facets. Each pyramid void has a dislocation at the peak of the pyramid, which continues up along the [0001] growth direction to the surface. Some of the dislocations are hexagonal open core screw dislocations with {101¯0} side facets, varying lateral widths, and varying degrees of hexagonal symmetry. STEM electron energy loss spectroscopy spectrum imaging showed a large C concentration inside the void and on the void surfaces. There is also a larger C concentration in the GaN (or InGaN) below the void than above the void. We propose that inadvertent carbon deposition during metal organic chemical vapor deposition growth acts as a mask, stopping the GaN deposition locally, which in combination with lateral overgrowth, creates a void. Subsequent layers of GaN deposited around the C covered region create the overhanging {101¯1} facets, and the meeting of the six {101¯1} facets at the pyramid’s peak is not perfect, resulting in a dislocation.</jats:p> Hexagonal-based pyramid void defects in GaN and InGaN Journal of Applied Physics |
| spellingShingle | Yankovich, A. B., Kvit, A. V., Li, X., Zhang, F., Avrutin, V., Liu, H. Y., Izyumskaya, N., Özgür, Ü., Morkoç, H., Voyles, P. M., Journal of Applied Physics, Hexagonal-based pyramid void defects in GaN and InGaN, General Physics and Astronomy |
| title | Hexagonal-based pyramid void defects in GaN and InGaN |
| title_full | Hexagonal-based pyramid void defects in GaN and InGaN |
| title_fullStr | Hexagonal-based pyramid void defects in GaN and InGaN |
| title_full_unstemmed | Hexagonal-based pyramid void defects in GaN and InGaN |
| title_short | Hexagonal-based pyramid void defects in GaN and InGaN |
| title_sort | hexagonal-based pyramid void defects in gan and ingan |
| title_unstemmed | Hexagonal-based pyramid void defects in GaN and InGaN |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.3679540 |