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Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , , , |
| In: | Applied Physics Letters, 97, 2010, 11 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Cheng, H. Kurdak, Ç. Leach, J. H. Wu, M. Morkoç, H. Cheng, H. Kurdak, Ç. Leach, J. H. Wu, M. Morkoç, H. |
|---|---|
| author |
Cheng, H. Kurdak, Ç. Leach, J. H. Wu, M. Morkoç, H. |
| spellingShingle |
Cheng, H. Kurdak, Ç. Leach, J. H. Wu, M. Morkoç, H. Applied Physics Letters Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure Physics and Astronomy (miscellaneous) |
| author_sort |
cheng, h. |
| spelling |
Cheng, H. Kurdak, Ç. Leach, J. H. Wu, M. Morkoç, H. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.3490248 <jats:p>Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.</jats:p> Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure Applied Physics Letters |
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AIP Publishing, 2010 |
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AIP Publishing, 2010 |
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Applied Physics Letters |
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| title |
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_unstemmed |
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_full |
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_fullStr |
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_full_unstemmed |
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_short |
Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_sort |
two-subband conduction in a gated high density inaln/aln/gan heterostructure |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.3490248 |
| publishDate |
2010 |
| physical |
|
| description |
<jats:p>Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.</jats:p> |
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| author | Cheng, H., Kurdak, Ç., Leach, J. H., Wu, M., Morkoç, H. |
| author_facet | Cheng, H., Kurdak, Ç., Leach, J. H., Wu, M., Morkoç, H., Cheng, H., Kurdak, Ç., Leach, J. H., Wu, M., Morkoç, H. |
| author_sort | cheng, h. |
| container_issue | 11 |
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| container_title | Applied Physics Letters |
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| description | <jats:p>Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.</jats:p> |
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| imprint | AIP Publishing, 2010 |
| imprint_str_mv | AIP Publishing, 2010 |
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| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Cheng, H. Kurdak, Ç. Leach, J. H. Wu, M. Morkoç, H. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.3490248 <jats:p>Magnetotransport measurements on an In0.16Al0.84N/AlN/GaN gated Hall bar sample have been performed at 0.28 K. By the application of a gate voltage we were able to vary the total two-dimensional electron gas density from 1.83×1013 to 2.32×1013 cm−2. Two frequency Shubnikov–de Haas oscillations indicate occupation of two subbands by electrons. The density of electrons in the first and second sublevels are found to increase linearly with gate voltage with a slope of 2.01×1012 cm−2/V and 0.47×1012 cm−2/V, respectively. And the quantum lifetimes for the first and second subbands ranged from 0.55 to 0.95×10−13 s and from 1.2 to 2.1×10−13 s.</jats:p> Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure Applied Physics Letters |
| spellingShingle | Cheng, H., Kurdak, Ç., Leach, J. H., Wu, M., Morkoç, H., Applied Physics Letters, Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure, Physics and Astronomy (miscellaneous) |
| title | Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_full | Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_fullStr | Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_full_unstemmed | Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_short | Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| title_sort | two-subband conduction in a gated high density inaln/aln/gan heterostructure |
| title_unstemmed | Two-subband conduction in a gated high density InAlN/AlN/GaN heterostructure |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.3490248 |