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Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes
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| Zeitschriftentitel: | Applied Physics Letters |
|---|---|
| Personen und Körperschaften: | , , |
| In: | Applied Physics Letters, 97, 2010, 9 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Bayram, C. Vashaei, Z. Razeghi, M. Bayram, C. Vashaei, Z. Razeghi, M. |
|---|---|
| author |
Bayram, C. Vashaei, Z. Razeghi, M. |
| spellingShingle |
Bayram, C. Vashaei, Z. Razeghi, M. Applied Physics Letters Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Physics and Astronomy (miscellaneous) |
| author_sort |
bayram, c. |
| spelling |
Bayram, C. Vashaei, Z. Razeghi, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.3484280 <jats:p>III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.</jats:p> Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Applied Physics Letters |
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AIP Publishing, 2010 |
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2010 |
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AIP Publishing |
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Applied Physics Letters |
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| title |
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_unstemmed |
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_full |
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_fullStr |
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_full_unstemmed |
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_short |
Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_sort |
room temperature negative differential resistance characteristics of polar iii-nitride resonant tunneling diodes |
| topic |
Physics and Astronomy (miscellaneous) |
| url |
http://dx.doi.org/10.1063/1.3484280 |
| publishDate |
2010 |
| physical |
|
| description |
<jats:p>III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.</jats:p> |
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| author | Bayram, C., Vashaei, Z., Razeghi, M. |
| author_facet | Bayram, C., Vashaei, Z., Razeghi, M., Bayram, C., Vashaei, Z., Razeghi, M. |
| author_sort | bayram, c. |
| container_issue | 9 |
| container_start_page | 0 |
| container_title | Applied Physics Letters |
| container_volume | 97 |
| description | <jats:p>III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.</jats:p> |
| doi_str_mv | 10.1063/1.3484280 |
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| imprint | AIP Publishing, 2010 |
| imprint_str_mv | AIP Publishing, 2010 |
| institution | DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1, DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161 |
| issn | 1077-3118, 0003-6951 |
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| language | English |
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| series | Applied Physics Letters |
| source_id | 49 |
| spelling | Bayram, C. Vashaei, Z. Razeghi, M. 0003-6951 1077-3118 AIP Publishing Physics and Astronomy (miscellaneous) http://dx.doi.org/10.1063/1.3484280 <jats:p>III-nitride resonant tunneling diodes (RTDs), consisting Al0.2Ga0.8N/GaN double-barrier (DB) active layers, were grown on c-plane lateral epitaxial overgrowth (LEO) GaN/sapphire and c-plane freestanding (FS) GaN. RTDs on both templates, fabricated into mesa diameters ranging from 5 to 35 μm, showed negative differential resistance (NDR) at room temperature. NDR characteristics (voltage and current density at NDR onset and current-peak-to-valley ratio) were analyzed and reported as a function of device size and substrate choice. Our results show that LEO RTDs perform as well as FS ones and DB active layer design and quality have been the bottlenecks in III-nitride RTDs.</jats:p> Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes Applied Physics Letters |
| spellingShingle | Bayram, C., Vashaei, Z., Razeghi, M., Applied Physics Letters, Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes, Physics and Astronomy (miscellaneous) |
| title | Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_full | Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_fullStr | Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_full_unstemmed | Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_short | Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| title_sort | room temperature negative differential resistance characteristics of polar iii-nitride resonant tunneling diodes |
| title_unstemmed | Room temperature negative differential resistance characteristics of polar III-nitride resonant tunneling diodes |
| topic | Physics and Astronomy (miscellaneous) |
| url | http://dx.doi.org/10.1063/1.3484280 |