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Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc
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| Zeitschriftentitel: | Journal of Applied Physics |
|---|---|
| Personen und Körperschaften: | , , |
| In: | Journal of Applied Physics, 100, 2006, 11 |
| Format: | E-Article |
| Sprache: | Englisch |
| veröffentlicht: |
AIP Publishing
|
| Schlagwörter: |
| author_facet |
Ahn, W. S. Ahn, S. H. Choi, S. K. Ahn, W. S. Ahn, S. H. Choi, S. K. |
|---|---|
| author |
Ahn, W. S. Ahn, S. H. Choi, S. K. |
| spellingShingle |
Ahn, W. S. Ahn, S. H. Choi, S. K. Journal of Applied Physics Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc General Physics and Astronomy |
| author_sort |
ahn, w. s. |
| spelling |
Ahn, W. S. Ahn, S. H. Choi, S. K. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.2369664 <jats:p>We observed the retention loss of dot domains (36nm diameter) and square domains with sizes of 1 and 25μm2 that were reversed by applying an electric field at an atomic force microscopy (AFM) conductive tip on a heteroepitaxial PbTiO3 thin film with + polarization in the virgin state, which was fabricated via hydrothermal epitaxy below Tc. Through theoretical calculations, it was discussed that the retention loss phenomena of a domain reversed by using an AFM tip were derived from the summation of the depolarization field energy and the strain-polarization coupling energy. Since the retention loss of the reversed domain with a straight c∕c domain wall by applying a homogeneous electric field did not occur, we suggest that a cylindrical domain, which has a nearly straight c∕c domain wall that extends to the bottom electrode on the given thin film, would be free from the retention loss.</jats:p> Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc Journal of Applied Physics |
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| title |
Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_unstemmed |
Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_full |
Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_fullStr |
Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_full_unstemmed |
Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_short |
Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_sort |
retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below tc |
| topic |
General Physics and Astronomy |
| url |
http://dx.doi.org/10.1063/1.2369664 |
| publishDate |
2006 |
| physical |
|
| description |
<jats:p>We observed the retention loss of dot domains (36nm diameter) and square domains with sizes of 1 and 25μm2 that were reversed by applying an electric field at an atomic force microscopy (AFM) conductive tip on a heteroepitaxial PbTiO3 thin film with + polarization in the virgin state, which was fabricated via hydrothermal epitaxy below Tc. Through theoretical calculations, it was discussed that the retention loss phenomena of a domain reversed by using an AFM tip were derived from the summation of the depolarization field energy and the strain-polarization coupling energy. Since the retention loss of the reversed domain with a straight c∕c domain wall by applying a homogeneous electric field did not occur, we suggest that a cylindrical domain, which has a nearly straight c∕c domain wall that extends to the bottom electrode on the given thin film, would be free from the retention loss.</jats:p> |
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| author | Ahn, W. S., Ahn, S. H., Choi, S. K. |
| author_facet | Ahn, W. S., Ahn, S. H., Choi, S. K., Ahn, W. S., Ahn, S. H., Choi, S. K. |
| author_sort | ahn, w. s. |
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| description | <jats:p>We observed the retention loss of dot domains (36nm diameter) and square domains with sizes of 1 and 25μm2 that were reversed by applying an electric field at an atomic force microscopy (AFM) conductive tip on a heteroepitaxial PbTiO3 thin film with + polarization in the virgin state, which was fabricated via hydrothermal epitaxy below Tc. Through theoretical calculations, it was discussed that the retention loss phenomena of a domain reversed by using an AFM tip were derived from the summation of the depolarization field energy and the strain-polarization coupling energy. Since the retention loss of the reversed domain with a straight c∕c domain wall by applying a homogeneous electric field did not occur, we suggest that a cylindrical domain, which has a nearly straight c∕c domain wall that extends to the bottom electrode on the given thin film, would be free from the retention loss.</jats:p> |
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| imprint | AIP Publishing, 2006 |
| imprint_str_mv | AIP Publishing, 2006 |
| institution | DE-L229, DE-D275, DE-Bn3, DE-Brt1, DE-D161, DE-Gla1, DE-Zi4, DE-15, DE-Pl11, DE-Rs1, DE-105, DE-14, DE-Ch1 |
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| spelling | Ahn, W. S. Ahn, S. H. Choi, S. K. 0021-8979 1089-7550 AIP Publishing General Physics and Astronomy http://dx.doi.org/10.1063/1.2369664 <jats:p>We observed the retention loss of dot domains (36nm diameter) and square domains with sizes of 1 and 25μm2 that were reversed by applying an electric field at an atomic force microscopy (AFM) conductive tip on a heteroepitaxial PbTiO3 thin film with + polarization in the virgin state, which was fabricated via hydrothermal epitaxy below Tc. Through theoretical calculations, it was discussed that the retention loss phenomena of a domain reversed by using an AFM tip were derived from the summation of the depolarization field energy and the strain-polarization coupling energy. Since the retention loss of the reversed domain with a straight c∕c domain wall by applying a homogeneous electric field did not occur, we suggest that a cylindrical domain, which has a nearly straight c∕c domain wall that extends to the bottom electrode on the given thin film, would be free from the retention loss.</jats:p> Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc Journal of Applied Physics |
| spellingShingle | Ahn, W. S., Ahn, S. H., Choi, S. K., Journal of Applied Physics, Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc, General Physics and Astronomy |
| title | Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_full | Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_fullStr | Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_full_unstemmed | Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_short | Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| title_sort | retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below tc |
| title_unstemmed | Retention loss behaviors in heteroepitaxial ferroelectric film with a +c monodomain fabricated by hydrothermal epitaxy below Tc |
| topic | General Physics and Astronomy |
| url | http://dx.doi.org/10.1063/1.2369664 |